# US 2014/0192333 A1 · Alignment Target Contrast in a Lithographic Double Patterning Process

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- Number: US 2014/0192333 A1
- Document ID: US20140192333A1
- Status: Published application
- Kind: A1
- Application number: 14/202,835
- Filed: 2014-03-10
- Published: 2014-07-10
- Earliest claimed: 2009-03-20
- Assignees: ASML Netherlands B.V.; ASML Holding N.V.
- Applicants: ASML Holding N.V
- Inventors: Harry SEWELL; Mircea Dusa; Richard Johannes Franciscus Van Haren; Manfred Gawein Tenner; Maya Angelova Doytcheva
- Web page: https://patentgrep.com/patent/US20140192333A1

## CPC

- G03F 9/7046: {Strategy, e.g. mark, sensor or wavelength selection}
- G03F 7/0035: {Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface}
- G03F 7/105: having substances, e.g. indicators, for forming visible images
- G03F 7/70466: {Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature (stitching G03F7/70475)}
- G03F 9/7076: {Mark details, e.g. phase grating mark, temporary mark}
- H10P 50/71: {using masks for conductive or resistive materials}
- H10P 76/204: {of organic photoresist masks}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

## Claims

### Claim 1

A method comprising:
providing a dye compound below, together with, on, or any combination thereof, a first radiation-sensitive layer on a substrate;
developing the first radiation-sensitive layer to form a first lithography pattern;
coating the first lithography pattern with a second radiation-sensitive layer;
detecting a location on the substrate of the first lithography pattern based on the dye compound providing an optical contrast between the first lithography pattern and the second radiation-sensitive layer; and
aligning the substrate with respect to a patterning device based on the location of the first lithography pattern.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
coating the substrate with the first radiation sensitive-layer;
developing the second radiation-sensitive layer to form a second lithography pattern; and
aligning the second lithography pattern interstitially with the first lithography pattern.

### Claim 3 (depends on 1)

The method of claim 1, wherein the dye compound and the first lithography pattern cooperate to form a pattern for alignment.

### Claim 4 (depends on 1)

The method of claim 1, wherein the adding of the dye compound occurs before the coating of the substrate.

### Claim 5 (depends on 1)

The method of claim 1, wherein the adding of the dye compound occurs after the coating of the substrate and before the developing of the first radiation-sensitive layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the adding of the dye compound occurs after the developing of the first radiation-sensitive layer.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
applying freezing material to the first lithography pattern before coating the first lithography pattern with the second radiation-sensitive layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the dye compound is fluorescent or luminescent at a desired wavelength band.

### Claim 9 (depends on 1)

The method of claim 1, wherein the dye compound is substantially absorbent or substantially reflective at a desired wavelength band.

### Claim 10 (depends on 1)

The method of claim 1, wherein the dye compound comprises one of a photosensitive compound, a photochromic material, or a photochromic material that comprises a spiropyrans, azobenzenes, photochromic quinones, inorganic photochromic materials, or photochromic complexes of organic chromophores attached to metal ions.

### Claim 11

A method comprising:
developing a first radiation-sensitive layer on a substrate to form a first lithography pattern;
coating the first lithography pattern with a second radiation-sensitive layer;
providing a dye compound below, together with, on, or any combination thereof, the second radiation-sensitive layer;
detecting a location of the first lithography pattern based on the dye compound providing an optical contrast between the first lithography pattern and the second radiation-sensitive layer; and
aligning the substrate with respect to a patterning device based on the location of the first lithography pattern.

### Claim 12 (depends on 11)

The method of claim 11, further comprising:
coating the substrate with the first radiation sensitive-layer;
developing the second radiation-sensitive layer to form a second lithography pattern; and
aligning the second lithography pattern interstitially with the first lithography pattern.

### Claim 13 (depends on 11)

The method of claim 11, wherein the dye compound and the second lithography pattern cooperate to form a pattern for alignment.

### Claim 14 (depends on 11)

The method of claim 11, further comprising:
freezing the first lithography pattern before coating the first lithography pattern with the second radiation-sensitive layer.

### Claim 15 (depends on 11)

The method of claim 11, wherein the dye compound is one of fluorescent or luminescent at a desired wavelength band or substantially absorbent or substantially reflective at the desired wavelength band.

### Claim 16 (depends on 11)

The method of claim 11, wherein the dye compound comprises one of a photosensitive compound, a photochromic material, or a photochromic material that comprises a spiropyrans, azobenzenes, photochromic quinones, inorganic photochromic materials, or photochromic complexes of organic chromophores attached to metal ions.

### Claim 17

An alignment system comprising:
an illumination source to provide an alignment beam for reading an alignment mark in a double patterning process;
a detection system configured to detect a location of a first lithography pattern on a substrate formed from a first radiation-sensitive layer coated on the substrate based on a dye compound provided to the first radiation-sensitive layer or a second radiation-sensitive layer coated on the first lithography pattern, the dye compound providing a contrast between the first lithography pattern comprising the alignment mark and the second radiation-sensitive layer; and
a positioning system configured to align the substrate with respect to a patterning device based on the detected location of the alignment mark formed in the first lithography pattern.

### Claim 18 (depends on 17)

The system of claim 17, wherein a second lithography pattern formed from the second radiation-sensitive layer is aligned interstitially with the first lithography pattern.

### Claim 19 (depends on 17)

The system of claim 17, wherein the dye compound and the first lithography pattern cooperate to form a pattern for alignment.

### Claim 20 (depends on 17)

The system of claim 17, wherein the dye compound is substantially absorbent or substantially reflective at a desired wavelength band.
