# US 2014/0191905 A1 · Integration of millimeter wave antennas on microelectronic substrates

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- Number: US 2014/0191905 A1
- Document ID: US20140191905A1
- Status: Published application
- Kind: A1
- Application number: 13/996,827
- Filed: 2012-03-26
- Published: 2014-07-10
- Earliest claimed: 2012-03-26
- Assignees: Intel Corporation
- Inventors: Telesphor Kamgaing
- Web page: https://patentgrep.com/patent/US20140191905A1

## CPC

- H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package}
- H01Q 21/0025: {Modular arrays}
- H01Q 21/0087: {Apparatus or processes specially adapted for manufacturing antenna arrays (manufacturing waveguides H01P11/00)}
- Y10T 29/49016: Antenna or wave energy "plumbing" making
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A high performance antenna incorporated on a microelectronic substrate by forming low-loss dielectric material structures in the microelectronic substrates and forming the antenna on the low-loss dielectric material structures. The low-loss dielectric material structures may be fabricated by forming a cavity in a build-up layer of the microelectronic substrate and filling the cavity with a low-loss dielectric material.

## Claims

### Claim at position 1

1-30. (canceled)

### Claim 31

A microelectronic structure, comprising:
a microelectronic substrate;
a low-loss dielectric material structure formed within the microelectronic substrate; and
an antenna disposed proximate the low-loss dielectric material structure.

### Claim 32 (depends on 31)

The microelectronic structure of claim 31, wherein the antenna abuts the low-loss dielectric material structure.

### Claim 33 (depends on 31)

The microelectronic structure of claim 31, wherein the antenna is embedded in the low-loss dielectric material structure.

### Claim 34 (depends on 31)

The microelectronic structure of claim 31, wherein the low-loss dielectric material structure is selected from the group comprising epoxy, crystal polymer, benzocyclobutene, and polyimide.

### Claim 35 (depends on 31)

The microelectronic structure of claim 31, wherein the low-loss dielectric material structure includes magnetic nanoparticles.

### Claim 36 (depends on 31)

The microelectronic structure of claim 31, further including a microelectronic device attached to the microelectronic substrate and a transmission line connecting the microelectronic device to the antenna.

### Claim 37 (depends on 33)

The microelectronic structure of claim 33, further including a transmission line isolation structure formed in the microelectronic substrate, wherein the transmission line is disposed on the transmission line isolation structure.

### Claim 38 (depends on 31)

The microelectronic structure of claim 31, wherein the microelectronic substrate comprises a substrate core having a first build-up layer on a first surface thereof, and wherein the low-loss dielectric material structure formed within the microelectronic substrate is formed within the first build-up layer.

### Claim 39 (depends on 38)

The microelectronic structure of claim 38, wherein the first build-up layer comprises a plurality of alternating metallization layers and dielectric layers.

### Claim 40 (depends on 38)

The microelectronic structure of claim 38, wherein the low-loss dielectric material structure formed within the microelectronic substrate is formed through the first build-up layer and at least partially into the substrate core.

### Claim 41 (depends on 38)

The microelectronic structure of claim 38, wherein the microelectronic substrate further comprises a second build-up layer on a second surface of the substrate core opposing the substrate core first surface, and wherein the low-loss dielectric material structure formed within the microelectronic substrate is formed through the first build-up layer, through the substrate core, and at least partially into the second build-up layer.

### Claim 42 (depends on 31)

The microelectronic structure of claim 31, wherein the microelectronic substrate comprises a bumpless build-up layer coreless microelectronic substrate.

### Claim 43

A method of fabricating a microelectronic structure, comprising:
forming a microelectronic substrate;
forming a low-loss dielectric material structure within the microelectronic substrate; and
forming an antenna proximate the low-loss dielectric material structure.

### Claim 44 (depends on 43)

The method of claim 43, wherein forming the antenna proximate the low-loss dielectric material structure comprises forming the antenna to abut the low-loss dielectric material structure.

### Claim 45 (depends on 43)

The method of claim 43, wherein forming the antenna proximate the low-loss dielectric material structure comprises embedding the antenna within the low-loss dielectric material structure.

### Claim 46 (depends on 43)

The method of claim 43, wherein forming the low-loss dielectric material structure comprises forming the low-loss dielectric material structure from a low-loss dielectric material selected from the group comprising epoxy, crystal polymer, benzocyclobutene, and polyimide.

### Claim 47 (depends on 43)

The method of claim 43, wherein forming a low-loss dielectric material structure within the microelectronic substrate comprises forming a low-loss dielectric material structure having magnetic nanoparticles dispensed therein within the microelectronic substrate.

### Claim 48 (depends on 43)

The method of claim 43, wherein the forming the low-loss dielectric material structure comprises forming a cavity in the microelectronic substrate and disposing a low-loss dielectric material within the cavity.

### Claim 49 (depends on 43)

The method of claim 43, further including attaching a microelectronic device to the microelectronic substrate and connecting the microelectronic device to the antenna with a transmission line.

### Claim 50 (depends on 49)

The method of claim 49, further including forming a transmission line isolation structure formed in the microelectronic substrate, wherein the transmission line is disposed on the transmission line isolation structure.

### Claim 51 (depends on 43)

The method of claim 43, wherein forming the microelectronic substrate comprises forming a first build-up layer on a first surface of a substrate core, and wherein forming the low-loss dielectric material structure within the microelectronic substrate comprises forming the low-loss dielectric material structure within the first build-up layer.

### Claim 52 (depends on 51)

The method of claim 51, wherein the first build-up layer comprises a plurality of alternating metallization layers and dielectric layers.

### Claim 53 (depends on 51)

The method of claim 51, wherein forming the low-loss dielectric material structure within the first build-up layer comprising forming the low-loss dielectric material structure through the first build-up layer and extending at least partially into the substrate core.

### Claim 54 (depends on 52)

The method of claim 52, further including forming a second build-up layer on a second surface of the substrate core opposing the substrate core first surface, and wherein forming the low-loss dielectric material structure within the microelectronic substrate comprises forming the low-loss dielectric material structure through the first build-up layer, through the substrate core, and at least partially into the second build-up layer.

### Claim 55 (depends on 52)

The method of claim 52, further including forming a transmission line isolation structure formed in a final dielectric layer of the first build-up layer of the microelectronic substrate.

### Claim 56 (depends on 55)

The method of claim 55, further including attaching a microelectronic device to the microelectronic substrate with a final metallization layer formed on the final dielectric layer; and connecting the microelectronic device to the antenna with a transmission line disposed on the transmission line isolation structure.

### Claim 57 (depends on 43)

The method of claim 43, wherein forming a microelectronic substrate comprises forming a bumpless build-up layer coreless microelectronic substrate.

### Claim 58

An electronic system, comprising:
a housing;
a microelectronic substrate disposed within the housing;
a low-loss dielectric material structure formed within the microelectronic substrate; and
an antenna disposed on the low-loss dielectric material structure.

### Claim 59 (depends on 58)

The electronic system of claim 58, further including a microelectronic device attached to the microelectronic substrate and a transmission line connecting the microelectronic device to the antenna.

### Claim 60 (depends on 59)

The electronic system of claim 59, further including a transmission line isolation structure formed in the microelectronic substrate, wherein the transmission line is disposed on the transmission line isolation structure.