Bicmos gate driver for class-s radio frequency power amplifier
AssigneeLSI Corporation
InventorsRoss S. Wilson, Said E. Abdelli, Peter Kiss, Donald R. Laturell, Kameran Azadet, James F. MacDonald
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AssigneeLSI Corporation
InventorsRoss S. Wilson, Said E. Abdelli, Peter Kiss, Donald R. Laturell, Kameran Azadet, James F. MacDonald
Estimating the term…
The invention may be embodied in a resynchronizing, push-pull drive circuit for driving the gate electrodes of a digital Class-S Radio Frequency Power Amplifier (RF-PA). A binary bitstream received from a bitstream generator, such as a sigma-delta modulator, Viterbi-based optimal-bit-pattern modulator sigma-delta, or other suitable modulator, is resynchronized to a low-jitter master clock, then converted to fast-rise, high-swing complementary digital signals to drive the gates of the Class-S RF-PA. The drive circuit provides a high slew-rate, large-swing, quasi-digital gate drive circuit to drive the significant gate capacitance of the RF-PA with sufficient rise times. A combination of bipolar transistor current switches and cascoded CMOS devices is employed to attain requisite performance. For example, the driving circuit is well suited for use with Class-S RF-PAs used in wireless communication systems.
A gate driver circuit for driving gates of output transistors of a switching radio frequency power amplifier, comprising:
A resynchronizing drive circuit for driving gates of output transistors of a switching radio frequency power amplifier, comprising:
A switching radio frequency power amplifier system, comprising:
Dependencies are inferred from the claim text.