# US 2014/0191618 A1 · Poling treatment method, plasma poling device, piezoelectric body and manufacturing method thereof, film forming device and etching device, and lamp annealing device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191618 A1 - Document ID: US20140191618A1 - Status: Published application - Kind: A1 - Application number: 14/123,138 - Filed: 2011-06-07 - Published: 2014-07-10 - Earliest claimed: 2011-06-07 - Assignees: Youtec Co., Ltd. - Inventors: Takeshi Kijima; Yuuji Honda - Web page: https://patentgrep.com/patent/US20140191618A1 ## CPC - H10N 30/045: by polarising - B23K 10/003: {Scarfing, desurfacing or deburring} - H10P 95/90: Thermal treatments, e.g. annealing or sintering - Y10T 29/42: Piezoelectric device making - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled. ## Claims ### Claim 1 A poling treatment method for applying a poling treatment to a substrate to be poled at a first temperature, wherein said first temperature is not lower than a temperature at which a residual polarization value in a hysteresis curve of said substrate to be poled becomes 0%. ### Claim 2 (depends on 1) The poling treatment method according to claim 1, wherein said poling treatment is applied to said substrate to be poled while a temperature is decreased from said first temperature to a second temperature or while the temperature is increased from said second temperature to said first temperature, and said second temperature is not lower than a temperature at which a residual polarization value becomes 50% of a residual polarization value at a room temperature in the hysteresis curve of said substrate to be poled, and also lower than said first temperature. ### Claim 3 A poling treatment method for applying a poling treatment to a substrate to be poled at a first temperature, wherein said first temperature is not lower than a Curie temperature. ### Claim 4 (depends on 3) The poling treatment method according to claim 3, wherein said poling treatment is applied to said substrate to be poled while a temperature is decreased from said first temperature to a second temperature, or while the temperature is increased from said second temperature to said first temperature, and said second temperature is not lower than 50° C. and also lower than said first temperature. ### Claim 5 A poling treatment method for applying a poling treatment to a substrate to be poled at a first temperature, wherein said first temperature is not lower than 100° C. ### Claim 6 (depends on 5) The poling treatment method according to claim 5, wherein said poling treatment is applied to said substrate to be poled while a temperature is decreased from said first temperature to a second temperature, or while the temperature is increased from said second temperature to said first temperature, and said second temperature is not lower than 100° C. and also lower than said first temperature. ### Claim 7 (depends on 1) The poling treatment method according to claim 1, wherein said substrate to be poled is the one in which a piezoelectric material film is formed on a silicon wafer having a thickness smaller than a thickness of the SEMI standard or a silicon wafer having a thickness not larger than 400 μm. ### Claim 8 (depends on 1) The poling treatment method according to claim 1, wherein said substrate to be poled is the one in which a piezoelectric material film is formed on any substrate of a metal substrate, a metal substrate having an oxidation resistance, a metal substrate having a heat resistance against the Curie temperature of said substrate to be poled or the temperature at which the residual polarization value in the hysteresis curve of said substrate to be poled becomes 0%, an iron based substrate, and an Ni based substrate. ### Claim 9 (depends on 1) The poling treatment method according to claim 1, wherein said substrate to be poled is the one in which a piezoelectric material film is formed on any substrate of a glass substrate, a glass substrate having an oxidation resistance, and a glass substrate having a heat resistance against the Curie temperature of said substrate to be poled or the temperature at which the residual polarization value in the hysteresis curve of said substrate to be poled becomes 0%. ### Claim 10 A poling treatment method for applying a poling treatment to a substrate to be poled, wherein said substrate to be poled is the one in which a piezoelectric material film is formed on a silicon wafer having a thickness smaller than a thickness of the SEMI standard or a silicon wafer having a thickness not larger than 400 μm. ### Claim 11 (depends on 1) The poling treatment method according to claim 1, wherein said substrate to be poled is a substrate including a dielectric body or an insulating body. ### Claim 12 (depends on 1) The poling treatment method according to claim 1, wherein said substrate to be poled is a substrate including a piezoelectric body. ### Claim 13 (depends on 1) The poling treatment method according to claim 1, wherein said substrate to be poled is a substrate including a pyroelectric body. ### Claim 14 (depends on 1) The poling treatment method according to claim 1, wherein said substrate to be poled is a substrate including a ferroelectric body. ### Claim 15 (depends on 1) The poling treatment method according to claim 1, wherein plasma is formed at a position facing said substrate to be poled when the poling treatment is applied to said substrate to be poled. ### Claim 16 (depends on 15) The poling treatment method according to claim 15, wherein a DC voltage when a DC plasma is formed at a position facing said substrate to be poled, or a DC voltage component when a high frequency plasma is formed at a position facing said substrate to be poled, is ±50 V to ±2 kV. ### Claim 17 (depends on 15) The poling treatment method according to claim 15, wherein a pressure when said plasma is formed is 0.01 Pa to an air pressure. ### Claim 18 (depends on 15) The poling treatment method according to claim 15, wherein a plasma forming gas when said plasma is formed is one or more kinds of gas selected from a group of inert gas, H2, N2, O2, F2, CxHy, CxFy, and air. ### Claim 19 (depends on 1) A piezoelectric body, wherein the poling treatment is applied to said substrate to be poled by the poling treatment method according to claim 1 and said substrate to be poled is provided with piezoelectric activity. ### Claim 20 A plasma poling device, comprising: a poling chamber; a holding electrode which is disposed in said poling chamber and holds a substrate to be poled; an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode; a power source electrically connected to one electrode of said holding electrode and said opposite electrode; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode; and a control unit controlling said power source, said gas supply mechanism, and said temperature control mechanism, wherein said control unit controls said power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than a temperature at which a residual polarization value in a hysteresis curve of said substrate to be poled becomes 0%, and to form a plasma at a position facing said substrate to be poled and apply the poling treatment to said substrate to be poled. ### Claim 21 A plasma poling device, comprising: a poling chamber; a holding electrode which is disposed in said poling chamber and holds a substrate to be poled; an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode; a first power source and a ground potential connected to said holding electrode via a first switch; a second power source and said ground potential connected to said opposite electrode via a second switch; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode; and a control unit controlling said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism, wherein said first switch switches from a first state in which said holding electrode and said first power source are electrically connected to each other, to a second state in which said holding electrode and said ground potential are electrically connected to each other, said second switch switches from a third state in which said opposite electrode and said ground potential are electrically connected to each other, to a fourth state in which said opposite electrode and said second power source are electrically connected to each other, and said control unit controls said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than a temperature at which a residual polarization value in a hysteresis curve of said substrate to be poled becomes 0%, and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled, in said first state and said third state or in said second state and said fourth state. ### Claim 22 (depends on 20) The plasma poling device according to claim 20, wherein said control unit is controlled so as to apply said poling treatment to said substrate to be poled, while decreasing a temperature from said first temperature to a second temperature or while increasing the temperature from said second temperature to said first temperature, and said second temperature is not lower than a temperature at which the residual polarization value becomes 50% of a residual polarization value at a room temperature in the hysteresis curve of said substrate to be poled, and also lower than said first temperature. ### Claim 23 A plasma poling device, comprising: a poling chamber; a holding electrode which is disposed in said poling chamber and holds a substrate to be poled; an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode; a power source electrically connected to one electrode of said holding electrode and said opposite electrode; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode; and a control unit controlling said power source, said gas supply mechanism, and said temperature control mechanism, wherein said control unit controls said power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than a Curie temperature, and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled. ### Claim 24 A plasma poling device, comprising: a poling chamber; a holding electrode which is disposed in said poling chamber and holds a substrate to be poled; an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode; a first power source and a ground potential connected to said holding electrode via a first switch; a second power source and said ground potential connected to said opposite electrode via a second switch; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode; and a control unit controlling said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism, wherein said first switch switches from a first state in which said holding electrode and said first power source are electrically connected to each other, to a second state in which said holding electrode and said ground potential are electrically connected to each other, said second switch switches from a third state in which said opposite electrode and said ground potential are electrically connected to each other, to a fourth state in which said opposite electrode and said second power source are electrically connected to each other, and said control unit controls said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than a Curie temperature, and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled, in said first state and said third state or in said second state and said fourth state. ### Claim 25 (depends on 23) The plasma poling device according to claim 23, wherein said control unit is controlled so as to apply said poling treatment to said substrate to be poled, while decreasing a temperature from said first temperature to a second temperature or while increasing the temperature from said second temperature to said first temperature, and said second temperature is not lower than 50° C. and also lower than said first temperature. ### Claim 26 A plasma poling device, comprising: a poling chamber; a holding electrode which is disposed in said poling chamber and holds a substrate to be poled; an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode; a power source electrically connected to one electrode of said holding electrode and said opposite electrode; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode; and a control unit controlling said power source, said gas supply mechanism, and said temperature control mechanism, wherein said control unit controls said power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than 100° C., and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled. ### Claim 27 A plasma poling device, comprising: a poling chamber; a holding electrode which is disposed in said poling chamber and holds a substrate to be poled; an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode; a first power source and a ground potential connected to said holding electrode via a first switch; a second power source and said ground potential connected to said opposite electrode via a second switch; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode; and a control unit controlling said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism, wherein said first switch switches from a first state in which said holding electrode and said first power source are electrically connected to each other, to a second state in which said holding electrode and said ground potential are electrically connected to each other, said second switch switches from a third state in which said opposite electrode and said ground potential are electrically connected to each other, to a fourth state in which said opposite electrode and said second power source are electrically connected to each other, and said control unit controls said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than 100° C., and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled, in said first state and said third state or in said second state and said fourth state. ### Claim 28 (depends on 26) The plasma poling device according to claim 26, wherein said control unit is controlled so as to apply said poling treatment to said substrate to be poled, while decreasing a temperature from said first temperature to a second temperature or while increasing the temperature from said second temperature to said first temperature, and said second temperature is not lower than 100° C. and also lower than said first temperature. ### Claim 29 (depends on 20) The plasma poling device according to claim 20, wherein said substrate to be poled is the one in which a piezoelectric material film is formed on a silicon wafer having a thickness smaller than a thickness of the SEMI standard or a silicon wafer having a thickness not larger than 400 μm. ### Claim 30 (depends on 20) The plasma poling device according to claim 20, wherein said substrate to be poled is the one in which a piezoelectric material film is formed on any substrate of a metal substrate, a metal substrate having an oxidation resistance, a metal substrate having a heat resistance against the Curie temperature of said substrate to be poled or the temperature at which the residual polarization value in the hysteresis curve of said substrate to be poled becomes 0%, an iron based substrate, and an Ni based substrate. ### Claim 31 (depends on 20) The plasma poling device according to claim 20, wherein said substrate to be poled is the one in which a piezoelectric material film is formed on any substrate of a glass substrate, a glass substrate having an oxidation resistance, and a glass substrate having a heat resistance against the Curie temperature of said substrate to be poled or the temperature at which the residual polarization value in the hysteresis curve of said substrate to be poled becomes 0%. ### Claim 32 (depends on 20) The plasma poling device according to claim 20, wherein said substrate to be poled is a substrate including a dielectric body or an insulating body. ### Claim 33 (depends on 20) The plasma poling device according to claim 20, wherein said substrate to be poled is a substrate including a piezoelectric body. ### Claim 34 (depends on 20) The plasma poling device according to claim 20, wherein said substrate to be poled is a substrate including a pyroelectric body. ### Claim 35 (depends on 20) The plasma poling device according to claim 20, wherein said substrate to be poled is a substrate including a ferroelectric body. ### Claim 36 (depends on 20) The plasma poling device according to claim 20, wherein a DC voltage for forming a DC plasma or a DC voltage component for forming a high frequency plasma when power is supplied to one electrode of said holding electrode and said opposite electrode, is ±50 V to ±2 kV. ### Claim 37 (depends on 20) The plasma poling device according to claim 20, comprising a pressure control mechanism controlling a pressure inside said poling chamber to 0.01 Pa to an air pressure when said poling treatment is performed. ### Claim 38 (depends on 20) The plasma poling device according to claim 20, wherein said plasma forming gas is one or more kinds of gas selected from a group of inert gas, H2, N2, O2, F2, CxHy, CxFy, and air. ### Claim 39 (depends on 20) A piezoelectric body, wherein a poling treatment is applied to said substrate to be poled by the plasma poling device according to claim 20, and said substrate to be poled is provided with piezoelectric activity. ### Claim 40 (depends on 20) A film forming device, comprising the plasma poling device according to claim 20. ### Claim 41 (depends on 40) The film forming device according to claim 40, wherein said film forming device is any one of a spin coating device, a lamp annealing device, a sputtering device, a CVD device, and an evaporation device. ### Claim 42 (depends on 20) An etching device, comprising the plasma poling device according to claim 20. ### Claim 43 A lamp annealing device, comprising: a chamber; a holding electrode which is disposed in said chamber and holds a substrate to be poled including any film of a dielectric material film, an insulating material film, a piezoelectric material film, a pyroelectric material film, and a ferroelectric material film; an opposite electrode which is disposed in said chamber and disposed facing said substrate to be poled held on said holding electrode; a lamp heater irradiating said substrate to be poled with lamp light; a power source electrically connected to one electrode of said holding electrode and said opposite electrode; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; and a control unit controlling said lamp heater, said power source, and said gas supply mechanism. ### Claim 44 (depends on 43) The lamp annealing device according to claim 43, wherein said control unit controls said lamp heater, said power source, and said gas supply mechanism, so that said substrate to be poled is heated to a crystallization temperature and any of said films is crystallized by the irradiation of the lamp light from said lamp heater, and so that a plasma is formed at a position facing said substrate to be poled and a poling treatment is applied to said substrate to be poled at a first temperature lower than said crystallization temperature and also not lower than a temperature at which a residual polarization value in a hysteresis curve of said substrate to be poled becomes 0%. ### Claim 45 (depends on 43) The lamp annealing device according to claim 43, wherein said control unit controls said lamp heater, said power source, and said gas supply mechanism, so that said substrate to be poled is heated to a crystallization temperature and any of said films is crystallized by the irradiation of the lamp light from said lamp heater, and so that a plasma is formed at a position facing said substrate to be poled and a poling treatment is applied to said substrate to be poled at a first temperature lower than said crystallization temperature and also not lower than a Curie temperature. ### Claim 46 (depends on 43) The lamp annealing device according to claim 43, wherein said control unit controls said lamp heater, said power source, and said gas supply mechanism, so that said substrate to be poled is heated to a crystallization temperature and any of said films is crystallized by the irradiation of the lamp light from said lamp heater, and so that a plasma is formed at a position facing said substrate to be poled and a poling treatment is applied to said substrate to be poled at a first temperature lower than said crystallization temperature and also not lower than 100° C. ### Claim 47 (depends on 43) The lamp annealing device according to claim 43, wherein said control unit controls said lamp heater, said power source, and said gas supply mechanism, so that a plasma is formed at a position facing said substrate to be poled while said substrate to be poled is heated to a crystallization temperature by the irradiation of the lamp light from said lamp heater, and thereby a poling treatment is applied to said substrate to be poled while any of said films is crystallized. ### Claim 48 A lamp annealing device, comprising: a chamber; a holding electrode which is disposed in said chamber and holds a substrate to be poled including any film of a dielectric material film, an insulating material film, a piezoelectric material film, a pyroelectric material film, and a ferroelectric material film; an opposite electrode which is disposed in said chamber and disposed facing said substrate to be poled held on said holding electrode; a lamp heater irradiating said substrate to be poled with lamp light; a first power source and a ground potential connected to said holding electrode via a first switch; a second power source and said ground potential connected to said opposite electrode via a second switch; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; and a control unit controlling said lamp heater, said first power source, said second power source, and said gas supply mechanism, wherein said first switch switches from a first state in which said holding electrode and said first power source are electrically connected to each other, to a second state in which said holding electrode and said ground potential are electrically connected to each other, said second switch switches from a third state in which said opposite electrode and said ground potential are electrically connected to each other, to a fourth state in which said opposite electrode and said second power source are electrically connected to each other. ### Claim 49 (depends on 48) The lamp annealing device according to claim 48, wherein said control unit controls said lamp heater, said first power source, said second power source and said gas supply mechanism, so that said substrate to be poled is heated to a crystallization temperature and any of said films is crystallized by the irradiation of the lamp light from said lamp heater, and so that a plasma is formed at a position facing said substrate to be poled in said first state and said third state or in said second state and said fourth state and a poling treatment is applied to said substrate to be poled at a first temperature lower than said crystallization temperature and also not lower than a temperature at which a residual polarization value in a hysteresis curve of said substrate to be poled becomes 0%. ### Claim 50 (depends on 48) The lamp annealing device according to claim 48, wherein said control unit controls said lamp heater, said first power source, said second power source and said gas supply mechanism, so that said substrate to be poled is heated to a crystallization temperature and any of said films is crystallized by the irradiation of the lamp light from said lamp heater, and so that a plasma is formed at a position facing said substrate to be poled in said first state and said third state or in said second state and said fourth state and a poling treatment is applied to said substrate to be poled at a first temperature lower than said crystallization temperature and also not lower than a Curie temperature. ### Claim 51 (depends on 48) The lamp annealing device according to claim 48, wherein said control unit controls said lamp heater, said first power source, said second power source, and said gas supply mechanism, so that said substrate to be poled is heated to a crystallization temperature and any of said films is crystallized by the irradiation of the lamp light from said lamp heater, and so that a plasma is formed at a position facing said substrate to be poled in said first state and said third state or in said second state and said fourth state and a poling treatment is applied to said substrate to be poled at a first temperature lower than said crystallization temperature and also not lower than 100° C. ### Claim 52 (depends on 48) The lamp annealing device according to claim 48, wherein said control unit controls said lamp heater, said first power source, said second power source, and said gas supply mechanism, so that a plasma is formed at a position facing said substrate to be poled in said first state and said third state or in said second state and said fourth state while said substrate to be poled is heated to a crystallization temperature by the irradiation of the lamp light from said lamp heater, and thereby a poling treatment is applied to said substrate to be poled while any of said films is crystallized. ### Claim 53 (depends on 44) The lamp annealing device according to claim 44, wherein said control unit is controlled so as to apply said poling treatment to said substrate to be poled while decreasing a temperature from said first temperature to a second temperature, and said second temperature is not lower than a temperature at which a residual polarization value becomes 50% of a residual polarization value at a room temperature in the hysteresis curve of said substrate to be poled, and also lower than said first temperature. ### Claim 54 (depends on 45) The lamp annealing device according to claim 45, wherein said control unit is controlled so as to apply said poling treatment to said substrate to be poled while decreasing a temperature from said first temperature to a second temperature, and said second temperature is not lower than 50° C. and also lower than said first temperature. ### Claim 55 (depends on 46) The lamp annealing device according to claim 46, wherein said control unit is controlled so as to apply said poling treatment to said substrate to be poled while decreasing a temperature from said first temperature to a second temperature, and said second temperature is not lower than 100° C. and also lower than said first temperature. ### Claim 56 (depends on 43) The lamp annealing device according to claim 43, wherein said substrate to be poled is the one in which any of said films is formed on a silicon wafer having a thickness smaller than a thickness of the SEMI standard or a silicon wafer having a thickness not larger than 400 μm. ### Claim 57 (depends on 43) The lamp annealing device according to claim 43, wherein said substrate to be poled is the one in which any of said films is formed on any substrate of a metal substrate, a metal substrate having an oxidation resistance, a metal substrate having a heat resistance against the Curie temperature of said substrate to be poled or the temperature at which the residual polarization value in the hysteresis curve of said substrate to be poled becomes 0%, an iron based substrate, and an Ni based substrate. ### Claim 58 (depends on 43) The lamp annealing device according to claim 43, wherein said substrate to be poled is the one in which any of said films is formed on any substrate of a glass substrate, a glass substrate having an oxidation resistance, and a glass substrate having a heat resistance against the Curie temperature of said substrate to be poled or the temperature at which the residual polarization value in the hysteresis curve of said substrate to be poled becomes 0%. ### Claim 59 (depends on 43) The lamp annealing device according to claim 43, wherein a DC voltage for forming a DC plasma or a DC voltage component for forming a high frequency plasma when power is supplied to one electrode of said holding electrode and said opposite electrode, is ±50 V to ±2 kV. ### Claim 60 (depends on 43) The lamp annealing device according to claim 43, comprising a pressure control mechanism controlling a pressure inside said chamber to 0.01 Pa to an air pressure when said poling treatment is performed. ### Claim 61 (depends on 43) The lamp annealing device according to claim 43, wherein said plasma forming gas is one or more kinds of gas selected from a group of inert gas, H2, N2, O2, F2, CxHy, CxFy, and air. ### Claim 62 (depends on 43) The lamp annealing device according to claim 43, further comprising a pressure mechanism pressuring an inside of said chamber. ### Claim 63 (depends on 62) The lamp annealing device according to claim 62, wherein said pressure mechanism includes a gas introduction mechanism introducing pressurized gas into said chamber, and a gas exhaustion mechanism exhausting the gas in said chamber. ### Claim 64 A manufacturing method of a piezoelectric body for manufacturing a piezoelectric body by applying a poling treatment to a piezoelectric material object at a first temperature, wherein said first temperature is not lower than a temperature at which a residual polarization value in a hysteresis curve of said piezoelectric material object becomes 0%. ### Claim 65 (depends on 64) The manufacturing method of a piezoelectric body according to claim 64, wherein said poling treatment is applied to said piezoelectric material object while a temperature is decreased from said first temperature to a second temperature or while the temperature is increased from said second temperature to said first temperature, and said second temperature is not lower than a temperature at which a residual polarization value becomes 50% of a residual polarization value at a room temperature in the hysteresis curve of said piezoelectric material object, and also lower than said first temperature. ### Claim 66 A manufacturing method of a piezoelectric body for manufacturing a piezoelectric body by applying a poling treatment to a piezoelectric material object at a first temperature, wherein said first temperature is not lower than a Curie temperature. ### Claim 67 (depends on 66) The manufacturing method of a piezoelectric body according to claim 66, wherein said poling treatment is applied to said piezoelectric material object while a temperature is decreased from said first temperature to a second temperature, or while the temperature is increased from said second temperature to said first temperature, and said second temperature is not lower than 50° C. and also lower than said first temperature. ### Claim 68 A manufacturing method of a piezoelectric body for manufacturing a piezoelectric body by applying a poling treatment to a piezoelectric material object at a first temperature, wherein said first temperature is not lower than 100° C. ### Claim 69 (depends on 68) The manufacturing method of a piezoelectric body according to claim 68, wherein said poling treatment is applied to said piezoelectric material object while a temperature is decreased from said first temperature to a second temperature, or while the temperature is increased from said second temperature to said first temperature, and said second temperature is not lower than 100° C. and also lower than said first temperature. ### Claim 70 (depends on 64) The manufacturing method of a piezoelectric body according to claim 64, wherein said piezoelectric material object is the one in which a piezoelectric material film is formed on a substrate, and said poling treatment is performed by forming a plasma at a position facing said piezoelectric material film. ### Claim 71 (depends on 70) The manufacturing method of a piezoelectric body according to claim 70, wherein a rear surface of said substrate is polished and a thickness of said substrate is reduced before the piezoelectric material film is formed on said substrate. ### Claim 72 A manufacturing method of a piezoelectric body, wherein a rear surface of a substrate is polished and a thickness of said substrate is reduced, a piezoelectric material film is formed on said substrate, and a poling treatment is applied to said piezoelectric material film by forming a plasma at a position facing said piezoelectric material film. ### Claim 73 (depends on 71) The manufacturing method of a piezoelectric body according to claim 71, wherein the thickness of said substrate is not larger than 400 μm after the thickness of the substrate has been reduced. ### Claim 74 (depends on 70) The manufacturing method of a piezoelectric body according to claim 70, which is a manufacturing method of a piezoelectric body for performing said poling treatment using a plasma poling device, wherein said plasma poling device includes: a poling chamber; a holding electrode which is disposed in said poling chamber and holds said substrate; an opposite electrode which is disposed in said poling chamber and disposed facing said substrate held on said holding electrode; a power source electrically connected to one electrode of said holding electrode and said opposite electrode; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; and a temperature control mechanism controlling a temperature of said substrate held on said holding electrode. ### Claim 75 (depends on 70) The manufacturing method of a piezoelectric body according to claim 70, which is a manufacturing method of a piezoelectric body for performing said poling treatment using a plasma poling device, wherein said plasma poling device includes: a poling chamber; a holding electrode which is disposed in said poling chamber and holds said substrate; an opposite electrode which is disposed in said poling chamber and disposed facing said substrate held on said holding electrode; a first power source and a ground potential connected to said holding electrode via a first switch; a second power source and said ground potential connected to said opposite electrode via a second switch; a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode; and a temperature control mechanism controlling a temperature of said substrate held on said holding electrode. ### Claim 76 A manufacturing method of a piezoelectric body, comprising the steps of: forming a piezoelectric material film on a substrate; irradiating said piezoelectric material film with lamp light from a lamp heater, thereby heating said piezoelectric material film to a crystallization temperature to crystallize the film; and forming a plasma at a position facing said piezoelectric material film and applying a poling treatment to said piezoelectric material film at a first temperature, wherein said first temperature is lower than said crystallization temperature and also not lower than a temperature at which a residual polarization value in a hysteresis curve of said piezoelectric material film becomes 0%. ### Claim 77 (depends on 76) The manufacturing method of a piezoelectric body according to claim 76, wherein said poling treatment is applied to said piezoelectric material film while a temperature is decreased from said first temperature to a second temperature, and said second temperature is not lower than a temperature at which a residual polarization value becomes 50% of a residual polarization value at a room temperature in the hysteresis curve of said piezoelectric material film, and also lower than said first temperature. ### Claim 78 A manufacturing method of a piezoelectric body, comprising the steps of: forming a piezoelectric material film on a substrate; irradiating said piezoelectric material film with lamp light from a lamp heater, thereby heating said piezoelectric material film to a crystallization temperature to crystallize the film; and forming a plasma at a position facing said piezoelectric material film and applying a poling treatment to said piezoelectric material film at a first temperature, wherein said first temperature is lower than said crystallization temperature and also not lower than a Curie temperature. ### Claim 79 (depends on 78) The manufacturing method of a piezoelectric body according to claim 78, wherein said poling treatment is applied to said piezoelectric material film while a temperature is decreased from said first temperature to a second temperature, and said second temperature is not lower than 50° C. and also lower than said first temperature. ### Claim 80 A manufacturing method of a piezoelectric body, comprising the steps of: forming a piezoelectric material film on a substrate; irradiating said piezoelectric material film with lamp light from a lamp heater, thereby heating said piezoelectric material film to a crystallization temperature to crystallize the film; and forming a plasma at a position facing said piezoelectric material film and applying a poling treatment to said piezoelectric material film at a first temperature, wherein said first temperature is lower than said crystallization temperature and also not lower than 100° C. ### Claim 81 (depends on 80) The manufacturing method of a piezoelectric body according to claim 80, wherein said poling treatment is applied to said piezoelectric material film while a temperature is decreased from said first temperature to a second temperature, and said second temperature in not lower than 100° C. and also lower than said first temperature. ### Claim 82 A manufacturing method of a piezoelectric body, comprising the steps of: forming a piezoelectric material film on a substrate; and forming a plasma at a position facing said piezoelectric material film while heating said piezoelectric material film to a crystallization temperature by irradiating said piezoelectric material film with lamp light from a lamp heater, and thereby applying a poling treatment to said piezoelectric material film while crystallizing said piezoelectric material film. ### Claim 83 (depends on 82) The manufacturing method of a piezoelectric body according to claim 82, wherein said poling treatment is applied to said piezoelectric material film while a temperature is decreased from said first temperature to a second temperature, and said second temperature is a temperature not lower than a temperature at which a residual polarization value becomes 50% of a residual polarization value at a room temperature in a hysteresis curve of said piezoelectric material film, or a temperature not lower than 50° C. and also lower than said crystallization temperature.