# US 2014/0191421 A1 · Semiconductor device

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- Number: US 2014/0191421 A1
- Document ID: US20140191421A1
- Status: Published application
- Kind: A1
- Application number: 14/140,650
- Filed: 2013-12-26
- Published: 2014-07-10
- Earliest claimed: 2013-01-07
- Assignees: Denso Corporation
- Applicants: Denso Corporation
- Inventors: Kouichi SAWADA; Yasushi TANAKA
- Web page: https://patentgrep.com/patent/US20140191421A1

## CPC

- H10W 72/012: {of bump connectors, dummy bumps or thermal bumps}
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants
- H10W 74/147: {the encapsulations being multilayered}
- H10W 74/129: {forming a chip-scale package [CSP]}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a semiconductor substrate, an interlayer insulation film, multiple wiring layers, a first hard film, and an electrical pad. The semiconductor substrate has a semiconductor element. The interlayer insulation film is disposed above the semiconductor substrate. The multiple wiring layers are disposed within the interlayer insulation film. The first hard film is disposed above the interlayer insulation film, and the first hard film is harder than the interlayer insulation film. The electrical pad is disposed above the first hard film, and the electrical pad is used for an external connection. The electrical pad includes a lower layer pad, the upper layer pad, and a second hard film.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor substrate having a semiconductor element;
an interlayer insulation film disposed above the semiconductor substrate;
a plurality of wiring layers disposed within the interlayer insulation film;
a first hard film disposed above the interlayer insulation film, the first hard film being harder than the interlayer insulation film; and
an electrical pad disposed above the first hard film and used for an external connection,
wherein the electrical pad includes:
a lower layer pad disposed closer to the semiconductor substrate;
an upper layer pad disposed further from the semiconductor substrate; and
a second hard film disposed between the lower layer pad and the upper layer pad, and
wherein the second hard film has conductivity and is harder than the lower layer pad and the upper layer pad.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein the lower layer pad is thicker than the upper layer pad, and
wherein the second hard film is disposed above a center of the electrical pad in a thickness direction of the electrical pad, the thickness direction is perpendicular to a surface of the semiconductor substrate.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising
a barrier metal film disposed between the electrical pad and the first hard film, and
a silicon oxide film disposed between the barrier metal film and the first hard film,
wherein the first hard film is made from a silicon nitride film, and
wherein the silicon oxide film directly contacts with the barrier metal film and the first hard film.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1,
wherein the semiconductor element is disposed between the electrical pad and the semiconductor substrate.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1,
wherein the electrical pad has a bonding region connected with the external connection through a bonding part,
wherein a contact portion penetrates the first hard film at a position which is apart from the bonding region, and
wherein the electrical pad and the plurality of wiring layers are electrically connected through the contact portion.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5,
wherein, when the bonding region of the electrical pad has been connected with the bonding part, the lower layer pad below the bonding region exists between the bonding part and the first hard film.

### Claim 7 (depends on 5)

The semiconductor device according to claim 5,
wherein the electrical pad and the bonding part are made from different kinds of metals each other.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7,
wherein the semiconductor element is electrically connected with the plurality of wiring layers.