# US 2014/0191414 A1 · Semiconductor Device and Method for Fabricating the Same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0191414 A1
- Document ID: US20140191414A1
- Status: Published application
- Kind: A1
- Application number: 14/146,741
- Filed: 2014-01-03
- Published: 2014-07-10
- Earliest claimed: 2013-01-09
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Tae-Seong Kim
- Web page: https://patentgrep.com/patent/US20140191414A1

## CPC

- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W 20/0245: {comprising use of blind vias during the manufacture}
- H10W 20/0249: {wherein the through-semiconductor via protrudes from backsides of the chips, wafers or substrates during the manufacture}
- H10W 20/2134: {TSVs extending from the semiconductor wafer into back-end-of-line layers}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device and a method for fabricating the same are provided. The semiconductor device comprising a substrate including a first surface and a second surface that face each other, a planarization layer formed on the first surface of the substrate, a passivation layer formed on the planarization layer, and a through via contact penetrating the substrate, the planarization layer, and the passivation layer, and being exposed from the passivation layer.

## Claims

### Claim 1

A semiconductor device comprising:
a substrate including a first surface and a second surface that are opposite each other;
a planarization layer on the first surface of the substrate;
a passivation layer on the planarization layer; and
a through via contact penetrating the substrate, the planarization layer, and the passivation layer, an end of the through via contact being exposed through an opening in the passivation layer.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the planarization layer includes low viscosity resin, and wherein the passivation layer includes at least one of silicon oxide and silicon nitride.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein a surface of the planarization layer that directly contacts the passivation layer includes a first point that is a first distance from the through via contact and a second point that is a second distance from the through via contact, the second distance being greater than the first distance, wherein a first height from the second surface of the substrate to the first point is greater than a second height from the second surface of the substrate to the second point.

### Claim 4 (depends on 3)

The semiconductor device of claim 3, wherein a portion of the through via contact projects from the first surface of the substrate, and the planarization layer entirely surrounds a side surface of the portion of the through via contact that projects from the first surface.

### Claim 5 (depends on 4)

The semiconductor device of claim 4, wherein the planarization layer includes a recess, and wherein the passivation layer fills the recess.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, further comprising an adhesive layer interposed between the first surface of the substrate and the planarization layer.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein the adhesive layer includes at least one of silicon oxide and silicon nitride.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, further comprising a dielectric spacer layer interposed between the substrate and the through via contact.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein a portion of the dielectric spacer layer is exposed through an opening in the passivation layer.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, further comprising a pre-metal dielectric layer formed on the second surface of the substrate to cover a circuit pattern formed on the second surface of the substrate, and a metal wiring layer formed on the pre-metal dielectric layer and including a lowermost metal wiring,
wherein the through via contact penetrates the pre-metal dielectric layer and is connected to the lowermost metal wiring.

### Claim 11

A semiconductor device comprising:
a substrate including a first surface and a second surface that are opposite each other;
an isolation pattern on the first surface of the substrate;
a circuit pattern on the first surface of the substrate;
a pre-metal dielectric layer on the first surface of the substrate that at least partly covers the circuit pattern;
a through-hole penetrating the pre-metal dielectric layer, the substrate and the isolation pattern;
a through via contact in the through-hole, wherein a portion of the through via contact projects from the second surface of the substrate;
a dielectric spacer layer between the substrate and the through via contact;
a planarization layer on the dielectric spacer layer and the second surface of the substrate, the planarization layer including a first opening that exposes the through via contact; and
a passivation layer on the planarization layer, the passivation layer including a second opening that exposes the through via contact.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, wherein the planarization layer includes low viscosity resin, and the passivation layer includes at least one of silicon oxide and silicon nitride.

### Claim 13 (depends on 11)

The semiconductor device of claim 11, wherein the dielectric spacer layer is only on a side wall of the through-hole.

### Claim 14 (depends on 11)

The semiconductor device of claim 11, further comprising a metal wiring layer on the pre-metal dielectric layer,
wherein the metal wiring layer includes a lowermost metal wiring, and the through via contact is connected to the lowermost metal wiring.

### Claim 15 (depends on 11)

The semiconductor device of claim 11, further comprising an adhesive layer between the substrate and the planarization layer,
wherein the adhesive layer includes at least one of silicon oxide and silicon nitride.

### Claim 16

A semiconductor device, comprising:
a substrate having a first major surface and a second major surface opposite the first surface;
a plurality of through-holes that each extend through the substrate from the first major surface to the second major surface;
a plurality of through via contacts that are positioned in respective ones of the plurality of through-holes, wherein a first end of each through via contact projects from the second major surface of the substrate;
a planarization layer on the second major surface of the substrate; and
a passivation layer on the planarization layer opposite the substrate, the passivation layer being coplanar with the first end of each through via contact.

### Claim 17 (depends on 16)

The semiconductor of claim 16, wherein the second major surface of the substrate is uneven.

### Claim 18 (depends on 17)

The semiconductor of claim 17, wherein the planarization layer extends at least between a first one of the plurality of through via contacts and a second one of the plurality of through via contacts, and wherein the portion of the planarization layer that is between the first and second ones of the plurality of through via contacts has a planar top surface at least in a middle section between the first and second ones of the plurality of through via contacts.

### Claim 19 (depends on 16)

The semiconductor of claim 16, wherein the planarization layer includes recesses that are filled by the passivation layer.

### Claim 20 (depends on 19)

The semiconductor of claim 19, wherein middle portions of the bottom surfaces of the recesses are planar surfaces.