# US 2014/0191393 A1 · Semiconductor package and fabrication method thereof

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- Number: US 2014/0191393 A1
- Document ID: US20140191393A1
- Status: Published application
- Kind: A1
- Application number: 14/086,599
- Filed: 2013-11-21
- Published: 2014-07-10
- Earliest claimed: 2013-01-07
- Assignees: Siliconware Precision Industries Co., Ltd.
- Applicants: Siliconware Precision Industries Co., Ltd
- Inventors: Lung-Tang Hung; Wei-Sheng Lin; Meng-Hung Yeh
- Web page: https://patentgrep.com/patent/US20140191393A1

## CPC

- H10W 74/47: comprising organic materials, e.g. plastics or resins
- H10W 42/00: Arrangements for protection of devices (arrangements for thermal protection H10W40/00)
- H10W 72/0198: {batch processes}
- H10W 72/072: {of bump connectors}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/07255: {changes in materials}
- H10W 72/075: {of bond wires}
- H10W 72/07536: {Soldering or alloying}
- H10W 72/07555: {changes in materials}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/251: {Materials}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/2528: {Intermetallic compounds}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/551: {Materials of bond wires}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/5528: {Intermetallic compounds}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor package is provided, including a carrier having electrical connecting pads, a semiconductor element disposed on the carrier and having electrode pads, conductive elements electrically connected to the electrode pads and the electrical connecting pads, fluorine ions formed between the conductive elements and the electrode pads or between the conductive elements and the electrical connecting pads, and an encapsulant formed on the carrier and the conductive elements, wherein the electrode pads or the electrical connecting pads are formed by aluminum materials to form fluorine aluminum by way of packaging the fluorine ions after the completion of the packaging process. Accordingly, the corrosion resistance of the semiconductor package is increased.

## Claims

### Claim 1

A semiconductor package, comprising:
a carrier having a plurality of electrical connecting pads;
a semiconductor element disposed on the carrier and having a plurality of electrode pads, wherein the electrode pads and the electrical connecting pads are formed by aluminum material;
a plurality of conductive elements electrically connected to the electrode pads and the electrical connecting pads;
fluorine ions formed between the conductive elements and the electrode pads or between the conductive elements and the electrical connecting pads; and
an encapsulant formed on the carrier and the conductive elements.

### Claim 2 (depends on 1)

The semiconductor package of claim 1, wherein the conductive elements are copper wires or copper lumps.

### Claim 3 (depends on 1)

The semiconductor package of claim 1, wherein an intermetallic compound is formed between the conductive elements and the electrode pads and between the conductive elements and the electrical connecting pads.

### Claim 4 (depends on 1)

The semiconductor package of claim 1, wherein the encapsulant contains chlorine ions.

### Claim 5 (depends on 4)

The semiconductor package of claim 4, further comprising aluminum chloride, which is formed on the electrode pads and electrical connecting pads.

### Claim 6 (depends on 1)

The semiconductor package of claim 1, wherein the fluorine ions exist as aluminum fluoride.

### Claim 7

A fabrication method of semiconductor package, comprising:
disposing at least a semiconductor element having a plurality of electrode pads on a carrier having a plurality of electrical connecting pads, wherein the electrode pads and the electrical connecting pads are formed by aluminum material;
forming fluorine ions on the electrode pads or electrical connecting pads;
electrically connecting a plurality of conductive elements to the electrode pads and the electrical connecting pads; and
forming an encapsulant on the carrier and conductive elements.

### Claim 8 (depends on 7)

The fabrication method of semiconductor package of claim 7, wherein the conductive elements are copper wires.

### Claim 9

A fabrication method of semiconductor package, comprising the steps of:
disposing at least a semiconductor element on a carrier via a plurality of conductive elements, wherein the carrier has a plurality of electrical connecting pads formed thereon and the at least a semiconductor element has a plurality of electrode pads formed thereon, the electrode pads and the electrical connecting pads are formed by aluminum material, fluorine ions are further formed on the electrode pads or electrical connecting pad, and the conductive elements are electrically connected to the electrode pads and the electrical connecting pads; and
forming an encapsulant on the carrier and conductive elements.

### Claim 10 (depends on 9)

The fabrication method of semiconductor package of claim 9, wherein the conductive elements are copper lumps.

### Claim 11 (depends on 7)

The fabrication method of semiconductor package of claim 7, wherein an intermetallic compound is formed between the conductive elements and the electrode pads and between the conductive elements and the electrical connecting pads.

### Claim 12 (depends on 7)

The fabrication method of semiconductor package of claim 7, further comprising cleaning the electrode pads and the electrical connecting pads by an organic fluorine solvents so as for a trace of fluorine ions in the organic fluorine solvent which remains on the electrode pads and electrical connecting pads to form the fluorine ions.

### Claim 13 (depends on 7)

The fabrication method of semiconductor package of claim 7, further comprising forming aluminum fluoride between the conductive elements and the electrode pads and between the conductive elements and the electrical connecting pads.

### Claim 14 (depends on 7)

The fabrication method of semiconductor package of claim 7, wherein the encapsulant contains fluorine ions.

### Claim 15 (depends on 14)

The fabrication method of semiconductor package of claim 14, further comprising forming aluminum chloride on the electrode pads and electrical connecting pads.

### Claim 16 (depends on 9)

The fabrication method of semiconductor package of claim 9, wherein an intermetallic compound is formed between the conductive elements and the electrode pads and between the conductive elements and the electrical connecting pads.

### Claim 17 (depends on 9)

The fabrication method of semiconductor package of claim 9, further comprising cleaning the electrode pads and the electrical connecting pads by an organic fluorine solvents so as for a trace of fluorine ions in the organic fluorine solvent which remains on the electrode pads and electrical connecting pads to form the fluorine ions.

### Claim 18 (depends on 9)

The fabrication method of semiconductor package of claim 9, further comprising forming aluminum fluoride between the conductive elements and the electrode pads and between the conductive elements and the electrical connecting pads.

### Claim 19 (depends on 9)

The fabrication method of semiconductor package of claim 9, wherein the encapsulant contains fluorine ions.