# US 2014/0191385 A1 · Process for Producing a Metal Device Housed in a Closed Housing within an Integrated Circuit, and Corresponding Integrated Circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191385 A1 - Document ID: US20140191385A1 - Status: Published application - Kind: A1 - Application number: 14/148,884 - Filed: 2014-01-07 - Published: 2014-07-10 - Earliest claimed: 2013-01-09 - Assignees: STMicroelectronics (Rousset) SAS - Applicants: STMicroelectronics (Rousset) SAS - Inventors: Antonio Di-Giacomo - Web page: https://patentgrep.com/patent/US20140191385A1 ## CPC - B81C 1/00246: {Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate} - H05K 7/02: Arrangements of circuit components or wiring on supporting structure - H10W 20/43: Layouts of interconnections - B81B 2207/015: the micromechanical device and the control or processing electronics being integrated on the same substrate - B81B 2207/07: Interconnects - B81B 2207/098: Arrangements not provided for in groups B81B2207/092 - B81B2207/097 - B81C 2203/0136: Growing or depositing of a covering layer - B81C 2203/0145: Hermetically sealing an opening in the lid - B81C 2203/0714: Forming the micromechanical structure with a CMOS process - B81C 2203/0735: Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) ## Abstract An integrated circuit includes a number of metallization levels separated by an insulating region disposed over a substrate. A housing includes walls formed from metal portions produced in various metallization levels. A metal device is housed in the housing. An aperture is produced in at least one wall of the housing. An external mechanism outside of the housing is configured so as to form an obstacle to diffusion of a fluid out of the housing through the at least one aperture. At least one through-metallization passes through the external mechanism and penetrates into the housing through the aperture in order to make contact with at least one element of the metal device. ## Claims ### Claim 1 A device, comprising: a substrate; a plurality of metallization levels overlying the substrate; a housing overlying the substrate, the housing including walls formed from metal portions of the metallization levels; a metal device housed in the housing; an aperture located in a wall of the housing; an external mechanism outside of the housing configured to form an obstacle to diffusion of a fluid out of the housing through the aperture; and a through-metallization passing through the external mechanism and penetrating into the housing through the aperture, at a distance away from edges of the aperture, in order to make contact with the metal device. ### Claim 2 (depends on 1) The device according to claim 1, wherein the walls comprise a floor formed by a first one of the metallization levels, a cap formed by a second one of the metallization levels and a plurality of sidewalls between the floor and the cap, each of the sidewalls including part of a third one of the metallization levels. ### Claim 3 (depends on 2) The device according to claim 2, wherein the metal device is formed at least in part by a portion of the third one of the metallization levels. ### Claim 4 (depends on 1) The device according to claim 1, further comprising an interconnect structure overlying the substrate, the interconnect structure comprising portions of the metallization levels separated by an insulating region. ### Claim 5 (depends on 1) The device according to claim 1, wherein the external mechanism comprises a metal plate integral with the at least one through-metallization. ### Claim 6 (depends on 5) The device according to claim 5, wherein the wall in which the at least one aperture is produced extends over at least three metallization levels and two via levels. ### Claim 7 (depends on 6) The device according to claim 6, wherein the aperture is bounded, in a first direction, by a first portion of the wall located in an upper metallization level and by a second wall portion located in a lower metallization level, and, in a second direction perpendicular to the first direction, by third and fourth wall portions extending facing each other over an intermediate metallization level and over the two via levels flanking this intermediate metallization level. ### Claim 8 (depends on 7) The device according to claim 7, wherein, the through-metallization extends in the intermediate metallization level and the plate extends over the at least three metallization levels and two via levels. ### Claim 9 (depends on 8) The device according to claim 8, wherein the plate comprises, in the lower metallization level, a bend in the direction of the wall. ### Claim 10 (depends on 5) The device according to claim 5, wherein the external mechanism further comprises an external metal box integral with the wall, containing the plate and having a box aperture, the plate being located between the aperture in the wall and the box aperture, the through-metallization passing through the box aperture without making contact with metal walls of the box. ### Claim 11 (depends on 1) The device according to claim 1, wherein the external mechanism comprises a tunnel integral with the wall around the aperture and being at least partially filled with an insulating material and through which the at least one through-metallization passes. ### Claim 12 (depends on 11) The device according to claim 11, wherein the tunnel has a serpentine shape. ### Claim 13 (depends on 1) The device according to claim 1, wherein internal corners of the housing are bevelled. ### Claim 14 A semiconductor device, comprising: a semiconductor substrate; a plurality of circuit elements disposed at a surface of the semiconductor substrate; an interconnect structure overlying the substrate and electrically interconnecting ones of the circuit elements, the interconnect structure comprising a number of metallization levels separated by an insulating region; a housing overlying the substrate, the housing including walls formed from metal portions of the metallization levels; and a metal device housed in the housing, the metal device electrically connected to the interconnect structure. ### Claim 15 (depends on 14) The device according to claim 14, wherein the circuit elements comprise transistors and wherein the metal device comprises a MEMS device. ### Claim 16 (depends on 14) The device according to claim 14, wherein the metal device comprises a metal element surrounded by an air gap or void. ### Claim 17 (depends on 14) The device according to claim 14, wherein the metal device comprises a metal element surrounded by insulating material. ### Claim 18 (depends on 14) The device according to claim 14, further comprising: an aperture located in a wall of the housing; and an external mechanism outside of the housing configured to form an obstacle to diffusion of a fluid out of the housing through the aperture. ### Claim 19 (depends on 18) The device according to claim 18, wherein the metal device is electrically connected to the interconnect structure by a through-metallization passing through the external mechanism and penetrating into the housing through the aperture. ### Claim 20 A device comprising: a substrate; a first metal layer overlying the substrate, a portion of the first metal layer forming a floor of a housing; a second metal layer overlying the first metal layer, a first portion the second metal layer forming a wall of the housing and a second portion the second metal layer forming at least part of a metal device disposed within the housing; and a third metal layer overlying the second metal layer, a portion of the third metal layer forming a cap of the housing. ### Claim 21 (depends on 20) The device according to claim 20, wherein the device further comprises circuit elements disposed at a surface of the substrate and wherein further portions of the first, second and third metal layers form interconnects to electrically interconnect the circuit elements into a circuit. ### Claim 22 (depends on 21) The device according to claim 21, wherein a third portion of the second metal layer electrically interconnects the metal device to the circuit. ### Claim 23 (depends on 20) The device according to claim 20, wherein the metal device comprises a MEMS device. ### Claim 24 (depends on 20) The device according to claim 20, wherein the wall further includes portions formed within a first via layer between the first and second metal layers and a second via layer between the second and third metal layers. ### Claim 25 (depends on 20) The device according to claim 20, further comprising: an aperture located in the wall of the housing; and an external mechanism outside of the housing configured to form an obstacle to diffusion of a fluid out of the housing through the aperture. ### Claim 26 A method for producing a device, the method comprising: providing substrate with integrated circuit elements disposed at a surface thereof; forming a closed housing over the substrate; and forming a metal device within the housing, the housing including a wall with an aperture through which a through-metallization passes in order to make electrical contact to the device within the housing. ### Claim 27 (depends on 26) The method according to claim 26, wherein forming the housing comprises forming a plurality of metallization levels separated by an insulating region. ### Claim 28 (depends on 27) The method according to claim 27, wherein forming the housing comprises: forming a lower part of the housing that is filled with insulating material of the insulating region and contains the metal device and the through-metallization, both of which are encapsulated in the insulating material; closing the filled lower part of the housing with a holed metal cap; and removing insulating material from the housing with a fluid penetrating into the housing through the holed cap. ### Claim 29 (depends on 28) The method according to claim 28, wherein removing the insulating material from the housing encapsulates the metal device and the through-metallization. ### Claim 30 (depends on 28) The method according to claim 28, further comprising forming an external mechanism outside of the housing, wherein removing the insulating material comprises diffusing the fluid out of the housing through an aperture that is impeded by the external mechanism. ### Claim 31 (depends on 28) The method according to claim 28, further comprising blocking the holed cap. ### Claim 32 (depends on 27) The method according to claim 27, further comprising forming an interconnect structure from the metallization levels, the interconnect structure interconnecting the integrated circuit elements.