# US 2014/0191383 A1 · Power device and method of packaging same

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- Number: US 2014/0191383 A1
- Document ID: US20140191383A1
- Status: Published application
- Kind: A1
- Application number: 14/205,374
- Filed: 2014-03-12
- Published: 2014-07-10
- Earliest claimed: 2012-07-16
- Assignees: Freescale Semiconductor, Inc.
- Inventors: Jinzhong YAO; Zhigang Bai; Xuesong Xu
- Web page: https://patentgrep.com/patent/US20140191383A1

## CPC

- H10W 70/442: {of multiple leadframes in a single chip}
- H10W 40/778: {in encapsulations}
- H10W 70/427: {Bent parts}
- H10W 70/461: {specially adapted for cooling}
- H10W 72/0198: {batch processes}
- H10W 72/073: {of die-attach connectors}
- H10W 72/225: {Bumps having a filler embedded in a matrix}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/253: {not comprising solid metals or solid metalloids, e.g. polymers or ceramics}
- H10W 72/354: {comprising polymers}
- H10W 72/5449: {not being orthogonal to a side surface of the chip, e.g. fan-out arrangements}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/859: {Bump connectors and bond wires}
- H10W 72/877: {Bump connectors and die-attach connectors}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/014: {using batch processing}
- H10W 74/016: {using moulds}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of packaging a power semiconductor die includes providing a first lead frame of a dual gauge lead frame. The first lead frame includes a thick die pad. A tape is attached to a first side of the thick die pad and the power die is attached to a second side of the thick die pad. A second lead frame of the dual gauge lead frame is provided. The second lead frame has thin lead fingers. One end of the lead fingers is attached to an active surface of the power die such that the lead fingers are electrically connected to bonding pads of the power die. A molding compound is then dispensed onto a top surface of the dual gauge lead frame such that the molding compound covers the power die and the lead fingers.

## Claims

### Claim at position 1

1-13. (canceled)

### Claim 14

A packaged power device, comprising:
a power frame with a thick die pad;
a power semiconductor die attached to the thick die pad;
a lead frame having thin lead fingers, wherein a thickness of the lead frame is less than a thickness of the power frame, and wherein one end of each of the thin lead fingers is attached to a bonding pad on an active surface of the power semiconductor die with a conductive adhesive; and
a molding compound that covers the power frame, the lead frame, and the power semiconductor die.

### Claim 15 (depends on 14)

The packaged power device of claim 14, wherein the thickness of the power frame is about 30 mils and the thickness of the lead frame is about 10 mils.

### Claim 16 (depends on 14)

The packaged power device of claim 14, wherein the lead fingers are bent to form a Z-shape.

### Claim 17 (depends on 14)

The packaged power device of claim 14, further comprising a second die attached to a die pad of the lead frame and located adjacent to the power semiconductor die and power frame, wherein die bonding pads of the second die are electrically connected to small lead fingers of the lead frame and die bonding pads of the power semiconductor die with wires.