# US 2014/0191373 A1 · Composite Wafer and Method for Manufacturing the Same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0191373 A1
- Document ID: US20140191373A1
- Status: Published application
- Kind: A1
- Application number: 14/164,915
- Filed: 2014-01-27
- Published: 2014-07-10
- Earliest claimed: 2012-07-18
- Assignees: NGK Insulators, Ltd.
- Applicants: Ngk Insulators, Ltd.
- Inventors: Yasunori Iwasaki; Akiyoshi Ide; Yuji Hori; Tomoyoshi Tai; Sugio Miyazawa
- Web page: https://patentgrep.com/patent/US20140191373A1

## CPC

- H10D 62/10: Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10P 90/00: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P 90/1902: {Preparing horizontally inhomogeneous wafers}
- H10P 90/1904: {Preparing vertically inhomogeneous wafers}
- H10P 90/1914: {using bonding}
- H10W 10/011: {of isolation regions comprising dielectric materials}
- H10W 10/10: Isolation regions comprising dielectric materials
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A composite wafer 10 includes a supporting substrate 12 and a semiconductor substrate 14 which are bonded to each other by direct bonding. The supporting substrate 12 is a translucent alumina substrate with an alumina purity of 99% or more. The linear transmittance of the supporting substrate 12 at the visible light range is 40% or less. Furthermore, the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate 12 is 60% or more. The average crystal grain size of the supporting substrate 12 is 10 to μm. The semiconductor substrate 14 is a single crystal silicon substrate. Such a composite wafer 10 has insulation performance and thermal conduction comparable to those of a SOS wafer, can be manufactured at low cost, and can be easily made to have a large diameter.

## Claims

### Claim 1

A composite wafer comprising a supporting substrate and a semiconductor substrate which are bonded to each other by direct bonding,
wherein the supporting substrate is composed of a polycrystalline translucent ceramic,
the semiconductor substrate is composed of silicon, and
the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate is higher than the total light transmittance from the front at a wavelength of 555 nm.

### Claim 2 (depends on 1)

The composite wafer according to claim 1, wherein the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate is 80% or more.

### Claim 3 (depends on 1)

The composite wafer according to claim 1, wherein the linear transmittance at a wavelength of 200 to 750 nm of the supporting substrate is 20% or less.

### Claim 4 (depends on 1)

The composite wafer according to claim 1, wherein the average crystal grain size of the supporting substrate is 10 to 50 μm.

### Claim 5 (depends on 1)

The composite wafer according to claim 1, wherein the supporting substrate is provided with a cavity.

### Claim 6 (depends on 1)

The composite wafer according to claim 1, wherein the supporting substrate is composed of polycrystalline translucent alumina.

### Claim 7 (depends on 1)

The composite wafer according to claim 1, wherein the semiconductor substrate is composed of single crystal silicon.

### Claim 8

A method for manufacturing a composite wafer comprising:
(1) a step of bonding a supporting substrate composed of a polycrystalline translucent ceramic, in which the total light transmittance from the front at a wavelength of 200 to 250 nm is higher than the total light transmittance from the front at a wavelength of 555 nm, and a semiconductor substrate composed of silicon to each other by direct bonding; and
(2) a step of thinning the semiconductor substrate by subjecting a surface thereof to an ion implantation method or grinding.

### Claim 9

A composite wafer comprising a supporting substrate and a semiconductor substrate which are bonded to each other by direct bonding,
wherein the supporting substrate is composed of a polycrystalline translucent ceramic,
the semiconductor substrate is composed of silicon,
the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate is higher than the total light transmittance from the front at a wavelength of 555 nm,
the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate is 70% or more,
the linear transmittance at a wavelength of 200 to 750 nm of the supporting substrate is 30% or less,
the average crystal grain size of the supporting substrate is 10 to 50 μm,
the supporting substrate is composed of polycrystalline translucent alumina, and
the semiconductor substrate is composed of single crystal silicon.