# US 2014/0191370 A1 · Silicon single crystal wafer, manufacturing method thereof and method of detecting defects

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- Number: US 2014/0191370 A1
- Document ID: US20140191370A1
- Status: Published application
- Kind: A1
- Application number: 14/028,063
- Filed: 2013-09-16
- Published: 2014-07-10
- Earliest claimed: 2013-01-08
- Assignees: LG Siltron Inc.
- Inventors: Woo Young SIM
- Web page: https://patentgrep.com/patent/US20140191370A1

## CPC

- H10P 74/20: characterised by the properties tested or measured, e.g. structural or electrical properties
- C30B 15/203: {the relationship of pull rate (v) to axial thermal gradient (G)}
- C30B 29/06: Silicon
- C30B 31/04: by contacting with diffusion materials in the liquid state
- H10D 62/53: the imperfections being within the semiconductor body
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3458: {Monocrystalline}
- H10P 14/3822: {Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing}
- H10P 36/20: Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
- H10P 50/642: {Chemical etching}
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

## Claims

### Claim 1

A silicon single crystal wafer comprising an IDP region that is divided into a NiG region and an NIDP region, wherein a Cu based defect is not detected in the IDP region, a Ni based defect is detected in the NiG region, and a Ni based defect is not detected in the NIDP region.

### Claim 2 (depends on 1)

The silicon single crystal wafer according to claim 1, further comprising a VDP region where both the Cu based defect and the Ni based defect are detected.

### Claim 3 (depends on 1)

The silicon single crystal wafer according to claim 1, wherein the defect is a metal precipitate that is formed by a combination of Ni with an oxygen precipitate of the silicon single crystal wafer.

### Claim 4 (depends on 2)

The silicon single crystal wafer according to claim 2, wherein the NiG region is placed between the VDP region and the NIDP region.

### Claim 5 (depends on 2)

The silicon single crystal wafer according to claim 2, wherein a pulling speed of the NiG region is between an pulling speed of the VDP region and a pulling speed of the NIDP region.

### Claim 6 (depends on 2)

The silicon single crystal wafer according to claim 2, wherein a pulling speed of the NiG region is lower than a pulling speed of the VDP region and higher than a pulling speed of the NIDP region.

### Claim 7

A silicon single crystal wafer, comprising:
a first region having a first pulling speed;
a second region having a second pulling speed, wherein the second pulling speed is higher than the first pulling speed;
a third region having a third pulling speed, wherein the third pulling speed is higher than the second pulling speed; and
wherein the second region is a region where a Ni based defect is detected but a Cu based defect is not detected.

### Claim 8 (depends on 7)

The silicon single crystal wafer according to claim 7, wherein the third region is a region where both the Ni based defect and the Cu based defect are detected.

### Claim 9 (depends on 7)

The silicon single crystal wafer according to claim 7, wherein the first region is a region where neither the Ni based defect nor the Cu based defect is detected.

### Claim 10 (depends on 7)

The silicon single crystal wafer according to claim 7, wherein the first region is an NIDP region, the second region is an NiG region, and the third region is a VDP region.

### Claim 11

A silicon single crystal wafer comprising:
a VDP region in which a Cu based defect is detected;
an NIDP region adjacent to the VDP region and in which both the Cu based defect and the Ni based defect are not detected; and
an NiG region placed between the VDP region and the NIDP region, wherein the NiG region is a region where the Cu based defect is not detected but the Ni based defect is detected.

### Claim 12 (depends on 11)

The silicon single crystal wafer according to claim 11, wherein a pulling speed of the NiG region is between a pulling speed of the VDP region and a pulling speed of the NIDP region.

### Claim 13 (depends on 11)

The silicon single crystal wafer according to claim 11, wherein a pulling speed of the NiG region is lower than a pulling speed of the VDP region and higher than a pulling speed of the NIDP region.

### Claim 14

A method of manufacturing a silicon single crystal wafer that is formed as an NIDP region where a Ni based defect is not detected.

### Claim 15 (depends on 14)

The method according to claim 14, wherein the silicon single crystal wafer is obtained by cutting silicon ingot.

### Claim 16 (depends on 15)

The method according to claim 15, wherein the wafer grows to allow the entire region of the silicon ingot to have the NIDP region.

### Claim 17

A method of detecting a silicon single crystal wafer, the method comprising:
Ni-contaminating the silicon single crystal wafer;
performing first heat treatment so as to form a core of a metal precipitate on the silicon single crystal wafer;
performing second heat treatment to allow the core of the metal precipitate to grow; and
confirming a defect in the silicon single crystal wafer.

### Claim 18 (depends on 17)

The method according to claim 17, wherein the metal precipitate is formed by reaction of the Ni to an oxygen precipitate of the silicon single crystal wafer.

### Claim 19 (depends on 17)

The method according to claim 17, wherein a concentration of the Ni is equal to or greater than at least 1E13 atom/cm2.

### Claim 20 (depends on 17)

The method according to claim 17, wherein the first heat treatment is performed at a temperature of about 870° C. for about four hours.

### Claim 21 (depends on 17)

The method according to claim 17, wherein a core of the metal precipitate is a seed.

### Claim 22 (depends on 17)

The method according to claim 17, wherein the second heat treatment is performed at a temperature of about 1000° C. for about one hour to three hours.

### Claim 23 (depends on 17)

The method according to claim 17, further comprising etching the silicon single crystal wafer, prior to confirming the defect in the silicon single crystal wafer.

### Claim 24 (depends on 23)

The method according to claim 23, wherein a surface of the silicon single crystal water except for the metal precipitate is etched.

### Claim 25 (depends on 24)

The method according to claim 24, wherein a step difference between a region where the metal precipitate exists and a region where there is no metal precipitate is formed by the etching.

### Claim 26 (depends on 17)

The method according to claim 17, further comprising performing further heat treatment if an oxygen concentration of the silicon single crystal wafer is equal to or less than a threshold, prior to performing the first heat treatment.

### Claim 27 (depends on 26)

The method according to claim 26, wherein the threshold is about 8 ppma.

### Claim 28 (depends on 26)

The method according to claim 26, wherein the further heat treatment is performed at a temperature of about 800° C. for about four hours.