# US 2014/0191369 A1 · Nitride semicondutor device

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- Number: US 2014/0191369 A1
- Document ID: US20140191369A1
- Status: Published application
- Kind: A1
- Application number: 14/068,067
- Filed: 2013-10-31
- Published: 2014-07-10
- Earliest claimed: 2013-01-08
- Assignees: Hitachi Metals, Ltd.
- Applicants: Hitachi Metals, Ltd.
- Inventors: Tadayoshi TSUCHIYA; Naoki KANEDA; Tomoyoshi MISHIMA
- Web page: https://patentgrep.com/patent/US20140191369A1

## CPC

- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 10/01: Manufacture or treatment
- H10D 10/051: {of vertical BJTs (of heterojunction BJTs H10D10/021; of Schottky BJTs H10D10/031; of thin film BJTs H10D10/041)}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A nitride semiconductor device includes a first nitride semiconductor layer, and an npn junction structure including a second nitride semiconductor layer of an n-type conductivity, a third nitride semiconductor layer of a p-type conductivity, and a fourth nitride semiconductor layer of an n-type conductivity layered in this order on the first nitride semiconductor layer. The third nitride semiconductor layer includes two or more uncovered regions which are uncovered with the fourth nitride semiconductor layer.

## Claims

### Claim 1

A nitride semiconductor device, comprising:
a first nitride semiconductor layer; and
an npn junction structure comprising a second nitride semiconductor layer comprising an n-type conductivity, a third nitride semiconductor layer comprising a p-type conductivity, and a fourth nitride semiconductor layer comprising an n-type conductivity layered in this order on the first nitride semiconductor layer,
wherein the third nitride semiconductor layer comprises two or more uncovered regions which are uncovered with the fourth nitride semiconductor layer.

### Claim 2 (depends on 1)

The nitride semiconductor device according to claim 1, wherein a shortest distance from an arbitrary point of a covered region which is covered with the fourth nitride semiconductor layer to the uncovered regions in the third nitride semiconductor layer is 50 μm or less.

### Claim 3 (depends on 1)

The nitride semiconductor device according to claim 1, wherein at least a portion of the uncovered regions is a region formed by a void portion opened at an upper surface of the fourth nitride semiconductor layer, and the fourth nitride semiconductor layer and the third nitride semiconductor layer constitute an inner side surface of the void portion.

### Claim 4 (depends on 3)

The nitride semiconductor device according to claim 3, wherein the fourth nitride semiconductor layer, the third nitride semiconductor layer, and the second nitride semiconductor layer constitute the inner side surface of the void portion.

### Claim 5 (depends on 1)

The nitride semiconductor device according to claim 1, wherein at least a portion of the uncovered regions is a region exposed by a void portion opened at an upper surface of the fourth nitride semiconductor layer, the fourth nitride semiconductor layer comprises a plurality of portions divided by the void portion, a single electrode is connected to the plurality of portions in common, and the electrode is electrically insulated from the third nitride semiconductor layer by an insulating film formed inside the void portion.

### Claim 6 (depends on 5)

The nitride semiconductor device according to claim 5, wherein the insulating film comprises an insulating material composed mainly of silicon dioxide.

### Claim 7 (depends on 1)

The nitride semiconductor device according to claim 1, wherein each of the first nitride semiconductor layer, the second nitride semiconductor layer, the third nitride semiconductor layer, and the fourth nitride semiconductor layer comprises a nitride semiconductor film formed by Material-Organic Vapor Phase Epitaxy or Hydride Vapor Phase Epitaxy.