# US 2014/0191365 A1 · Device design for partially oriented rutile dielectrics

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- Number: US 2014/0191365 A1
- Document ID: US20140191365A1
- Status: Published application
- Kind: A1
- Application number: 13/738,127
- Filed: 2013-01-10
- Published: 2014-07-10
- Earliest claimed: 2013-01-10
- Assignees: Intermolecular, Inc.
- Applicants: Intermolecular, Inc.
- Inventors: Sergey Barabash; Dipankar Pramanik
- Web page: https://patentgrep.com/patent/US20140191365A1

## CPC

- H10D 1/68: Capacitors having no potential barriers
- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/716: {having vertical extensions}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6506: {Formation of intermediate materials}
- H10P 14/69394: {the material containing titanium, e.g. TiO2}
- H10P 50/285: {of materials not containing Si, e.g. PZT or Al2O3}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Methods include forming a dielectric layer from a first material above a substrate. The dielectric layer is formed such that a preferred crystal direction for at least one electrical property of the first material is parallel to a surface of the dielectric layer. Next, forming a first and second trench within the dielectric layer wherein the first and second trenches have at least one curved portion. Forming a second material within the first trench and a third material within the second trench wherein the first material is different from the second and third materials. The first and second trenches are separated by a distance between 3-20 nm.

## Claims

### Claim 1

A method for forming a capacitive device, the method comprising:
forming a dielectric layer above a substrate, wherein the dielectric layer comprises a first material;
wherein a preferred crystal direction for the dielectric constant of the first material is parallel to a surface of the dielectric layer;
forming a first trench within the dielectric layer wherein the first trench has at least one curved portion;
forming a second trench within the dielectric layer wherein the second trench has at least one curved portion, wherein the second trench is formed around a perimeter of the first trench;
forming a second material within the first trench and a third material within the second trench, wherein each of the second material and the third material are conductive;
wherein the first material is different from the second material and the third material; and
wherein the first trench and the second trench are separated by a distance between 3-20 nm.

### Claim 2

(canceled)

### Claim 3 (depends on 1)

The method of claim 1, wherein the first trench and the second trench are formed by a RIE process technique.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first trench and the second trench are formed in a concentric shape.

### Claim 5 (depends on 1)

The method of claim 1, wherein the first trench and the second trench are formed simultaneously.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first and second trenches are formed sequentially.

### Claim 7 (depends on 1)

The method of claim 1 further comprising forming a conductive rutile oxide layer within a semiconductor structure prior to forming the dielectric layer such that the dielectric layer is formed on the conductive rutile oxide layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the first trench and the second trench are formed in at least one of a circular or a wave-like shape.

### Claim 9 (depends on 1)

The method of claim 1, wherein a degree of curvature of the curved portions of the first trench and the second trench are different.

### Claim 10

A capacitive device comprising:
a dielectric layer formed above a substrate wherein the dielectric layer comprises a first material;
wherein a preferred crystal direction for the dielectric constant of the first material is parallel to a surface of the dielectric layer;
a first trench formed within the dielectric layer wherein the first trench has at least one curved portion;
a second trench formed within the dielectric layer wherein the second trench has at least one curved portion, wherein the second trench is disposed around a perimeter of the first trench, and wherein a ratio of a first distance from a common center point of the first trench and the second trench to an outside wall of the first trench and a second distance from the common center point to an inside wall of the second trench is in the range from 0.9 to 0.99;
a second material formed within the first trench and a third material formed within the second trench, wherein each of the second material and the third material are conductive;
wherein the first material is different from the second material and the third material; and
wherein the first trench and the second trench are separated by a distance between 3-20 nm.

### Claim 11 (depends on 10)

The capacitive device of claim 10, wherein the first material comprises at least one of TiO2 or GeO2.

### Claim 12 (depends on 11)

The capacitive device of claim 11, wherein the first material comprises TiO2 and wherein the first material has a rutile crystal structure.

### Claim 13

(canceled)

### Claim 14

(canceled)

### Claim 15 (depends on 10)

The capacitive device of claim 10, wherein the first material is anisotropic.

### Claim 16 (depends on 10)

The capacitive device of claim 10, wherein a depth of each first trench and second trench is approximately 50 nm.

### Claim 17 (depends on 10)

The capacitive device of claim 10, wherein the second material and the third material each comprise at least one of W, Ni, TaN, Pt, WN, Ti, TiN, TiAlN, Ru, or Ir.

### Claim 18 (depends on 10)

The capacitive device of claim 10, wherein a RuO2 layer is disposed beneath the dielectric layer.

### Claim 19 (depends on 10)

The capacitive device of claim 10, wherein the second material and the third material are different.