# US 2014/0191357 A1 · Multi-substrate image sensor having a dual detection function > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191357 A1 - Document ID: US20140191357A1 - Status: Published application - Kind: A1 - Application number: 14/237,853 - Filed: 2012-08-08 - Published: 2014-07-10 - Earliest claimed: 2011-08-08 - Assignees: Siliconfile Technologies Inc. - Inventors: Do Young Lee - Web page: https://patentgrep.com/patent/US20140191357A1 ## CPC - H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself - H04N 13/239: using two two-dimensional [2D] image sensors having a relative position equal to or related to the interocular distance (H04N13/243 takes precedence) - H04N 25/70: SSIS architectures; Circuits associated therewith - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H10F 39/199: {Back-illuminated image sensors} - H10F 39/809: {of hybrid image sensors} - H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned with and bonded to each other to electrically couple the two photodiodes to each other, thereby forming a complete photodiode within one pixel. ## Claims ### Claim 1 A multi-substrate image sensor having a dual detection function, the senor comprising: a first photodiode formed on a first substrate; and a second photodiode formed on a second substrate, wherein the first photodiode and the second photodiode are in electric contact with each other. ### Claim 2 A multi-substrate image sensor having a dual detection function, the senor comprising: a first photodiode and a first pad formed on a first substrate; and a second photodiode and a second pad formed on a second substrate, wherein the first photodiode and the second photodiode are electrically coupled to each other by contact of the first pad and the second pad. ### Claim 3 (depends on 1) The image sensor according to claim 1, wherein the first substrate and the second substrate are made of silicon (Si), germanium (Ge), or gallium arsenic (GaAs). ### Claim 4 (depends on 1) The image sensor according to claim 1, wherein, on the second substrate, an entire or a part of access transistors are formed. ### Claim 5 (depends on 1) The image sensor according to claim 1, wherein a transfer transistor is selectively formed on only one of the first and second substrates. ### Claim 6 (depends on 1) The image sensor according to claim 1, wherein a first transfer transistor of access transistors is formed on the first substrate, and a second transfer transistor thereof is formed on the second substrate. ### Claim 7 (depends on 1) The image sensor according to claim 1, wherein the first photodiode and the second photodiode are integrated by the contact to produce one complete photodiode in one pixel. ### Claim 8 (depends on 1) The image sensor according to claim 1, wherein the first photodiode and the second photodiode are different from each other in the sizes of P-N junctions thereof. ### Claim 9 (depends on 1) The image sensor according to claim 1, wherein at least one of the first and second photodiodes has a trench formed on a periphery thereof. ### Claim 10 (depends on 9) The image sensor according to claim 9, wherein the trench is filled with impermeable material. ### Claim 11 A multi-substrate image sensor having a dual detection function, the senor comprising: a first photodiode and a first transfer transistor formed on a first substrate; and a second photodiode and a second transfer transistor formed on a second substrate, wherein the first photodiode, the second photodiode, the first transfer transistor, and the second transfer transistor are in electric contact with each other. ### Claim 12 A multi-substrate image sensor having a dual detection function, the senor comprising: a first photodiode and a first transfer transistor formed on a first substrate; and a second photodiode formed on a second substrate, wherein the first photodiode and the second photodiode are in electric contact with each other. ### Claim 13 A multi-substrate image sensor having a dual detection function, the senor comprising: a first photodiode formed on a first substrate; and a second photodiode and a second transfer transistor formed on a second substrate, wherein the first photodiode and the second photodiode are in electric contact with each other. ### Claim 14 (depends on 2) The image sensor according to claim 2, wherein the first substrate and the second substrate are made of silicon (Si), germanium (Ge), or gallium arsenic (GaAs). ### Claim 15 (depends on 2) The image sensor according to claim 2, wherein, on the second substrate, the entire a part of access transistors are formed. ### Claim 16 (depends on 2) The image sensor according to claim 2, wherein a transfer transistor is selectively formed on only one of the first and second substrates. ### Claim 17 (depends on 2) The image sensor according to claim 2, wherein a first transfer transistor of access transistors is formed on the first substrate, and a second transfer transistor thereof is formed on the second substrate. ### Claim 18 (depends on 2) The image sensor according to claim 2, wherein the first photodiode and the second photodiode are integrated by the contact to produce one complete photodiode in one pixel. ### Claim 19 (depends on 2) The image sensor according to claim 2, wherein the first photodiode and the second photodiode are different from each other in the sizes of P-N junctions thereof. ### Claim 20 (depends on 2) The image sensor according to claim 2, wherein at least one of the first and second photodiodes has a trench formed on a periphery thereof.