# US 2014/0191354 A1 · Laser system with polarized oblique incidence angle and associated methods

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- Number: US 2014/0191354 A1
- Document ID: US20140191354A1
- Status: Published application
- Kind: A1
- Application number: 14/209,592
- Filed: 2014-03-13
- Published: 2014-07-10
- Earliest claimed: 2011-09-30
- Assignees: SiOnyx, Inc.
- Applicants: SiOnyx, Inc.
- Inventors: Christopher Vineis
- Web page: https://patentgrep.com/patent/US20140191354A1

## CPC

- H10F 77/703: {of the semiconductor bodies, e.g. textured active layers}
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/128: {Annealing}
- H10F 77/1215: {characterised by the dopants}
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Novel laser processed semiconductor materials, systems, and methods associated with the manufacture and use of such materials are provided. In one aspect, for example, a method of processing a semiconductor material can include providing a semiconductor material and irradiating a target region of the semiconductor material with a beam of laser radiation to form a laser treated region. The laser radiation is irradiated at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°, and the laser radiation can be at least substantially p-polarized.

## Claims

### Claim 1

A method of processing a semiconductor material, comprising:
providing a semiconductor material;
irradiating a target region of the semiconductor material with a beam of laser radiation to form a laser treated region, wherein the laser radiation is irradiated at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°, and wherein the laser radiation is substantially p-polarized.

### Claim 2 (depends on 1)

The method of claim 1, wherein the angle of incidence is from about 20° to about 85°.

### Claim 3 (depends on 1)

The method of claim 1, wherein the angle of incidence is from about 40° to about 85°.

### Claim 4 (depends on 1)

The method of claim 1, wherein the angle of incidence is within about ±15° of the Brewster's angle for the semiconductor material.

### Claim 5 (depends on 1)

The method of claim 1, wherein the angle of incidence is within about ±5° of the Brewster's angle for the semiconductor material.

### Claim 6 (depends on 1)

The method of claim 1, wherein irradiating the target region forms surface features on the semiconductor material.

### Claim 7 (depends on 6)

The method of claim 6, wherein the surface features have a height of from about 1 nm to about 3 microns.

### Claim 8 (depends on 6)

The method of claim 6, wherein the surface features have a height of from about 100 nm to about 1 micron.

### Claim 9 (depends on 6)

The method of claim 6, wherein the surface features are formed using laser pulses having a duration of from about 1 femtosecond to about 500 picoseconds.

### Claim 10 (depends on 1)

The method of claim 1, wherein the laser treated region is heat annealed subsequent to irradiating with the laser radiation.

### Claim 11

A light enhanced semiconductor material, comprising:
a semiconductor material;
a laser treated region on a surface of the semiconductor material, the laser treated region having surface features oriented at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°.

### Claim 12 (depends on 11)

The material of claim 11, wherein substantially all of the surface features are oriented at an angle of incidence relative to the semiconductor material surface normal.

### Claim 13 (depends on 12)

The material of claim 12, wherein the angles of incidence for substantially all of the surface features are within about 30° of each other.

### Claim 14 (depends on 12)

The material of claim 12, wherein the angles of incidence for substantially all of the surface features are within about 15° of each other.

### Claim 15 (depends on 11)

The material of claim 11, wherein the angle of incidence is from about 20° to about 85°.

### Claim 16 (depends on 11)

The material of claim 11, wherein the angle of incidence is within about ±15° of the Brewster's angle for the semiconductor material.

### Claim 17 (depends on 11)

The material of claim 11, wherein the angle of incidence is within about ±5° of the Brewster's angle for the semiconductor material.

### Claim 18 (depends on 11)

The material of claim 11, wherein the semiconductor material is comprised of silicon.

### Claim 19 (depends on 11)

The material of claim 11, wherein the semiconductor material is selected from the group consisting of group III-V, group II-VI, and group

### Claim 20 (depends on 11)

The material of claim 11, wherein the surface features have a height of from about 1 nm to about 3 microns.

### Claim 21 (depends on 11)

The material of claim 11, wherein the surface features have a height of from about 100 nm to about 1 micron.