# US 2014/0191353 A1 · Solid-state imaging device, method of manufacturing the same, and electronic equipment

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- Number: US 2014/0191353 A1
- Document ID: US20140191353A1
- Status: Published application
- Kind: A1
- Application number: 14/204,837
- Filed: 2014-03-11
- Published: 2014-07-10
- Earliest claimed: 2010-03-31
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Susumu Hiyama; Kazufumi Watanabe
- Web page: https://patentgrep.com/patent/US20140191353A1

## CPC

- H10F 39/805: {Coatings}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/8053: {Colour filters}
- H10F 39/8057: {Optical shielding}
- H10F 39/8063: {Microlenses}
- H10F 39/8067: {Reflectors}
- H10F 39/807: {Pixel isolation structures}
- H10F 39/811: {Interconnections}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

## Claims

### Claim 1

A solid state imaging device comprising:
a semiconductor layer comprising a plurality of photodiodes;
a first antireflection film located over a first surface of the semiconductor layer;
a second antireflection film located over the first antireflection film; and
a light shielding layer having side surfaces which are adjacent to at least one of the first and the second antireflection film.

### Claim 2 (depends on 1)

The solid state imaging device of claim 1 wherein the light shielding layer is located between the first antireflection film and the second antireflection film.

### Claim 3 (depends on 2)

The solid state imaging device of claim 2 including an intermediate layer located between the first antireflection film and the light shielding layer.

### Claim 4 (depends on 1)

The solid state imaging device of claim 1 wherein the light shielding layer is embedded in the second antireflection film.

### Claim 5 (depends on 1)

The solid state imaging device of claim 1 including a separation region between each of the plurality of photodiodes.

### Claim 6 (depends on 5)

The solid state imaging device of claim 5 wherein the light shielding layer is located over the separation region.

### Claim 7 (depends on 5)

The solid state imaging device of claim 5 including
a trench located in each of the separation regions,
wherein,
the light shielding layer is located inside the trench.

### Claim 8 (depends on 1)

The solid state imaging device of claim 1 wherein the photodiode has a first surface which receives light.

### Claim 9 (depends on 8)

The solid state imaging device of claim 8 wherein the first antireflection film and the second antireflection film are located over the first surface of the photodiode.

### Claim 10 (depends on 1)

The solid state imaging device of claim 1 wherein the thickness of the first antireflection film is smaller than the thickness of the second antireflection film.

### Claim 11 (depends on 1)

The solid state imaging device of claim 1 wherein the light shielding layer has a substantially convex shape.

### Claim 12 (depends on 1)

The solid state imaging device of claim 1 wherein the first antireflection film includes at least one of an oxide of hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, lanthanoid or silicon element.

### Claim 13 (depends on 1)

The solid state imaging device of claim 1 wherein the second antireflection film includes at least one of an oxide of hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, lanthanoid or silicon element.

### Claim 14 (depends on 1)

The solid state imaging device of claim 1 wherein, the first antireflection film has a refraction index of 1.5 or more.

### Claim 15 (depends on 14)

The solid state imaging device of claim 14 wherein the second antireflection film has a refraction index of 1.5 or more

### Claim 16 (depends on 1)

The solid state imaging device of claim 1 including a wiring layer located over a second surface of the semiconductor layer opposite the first antireflection film and the second antireflection film.

### Claim 17 (depends on 15)

The solid state imaging device of claim 15 including a transistor located over the second surface of the semiconductor layer.

### Claim 18 (depends on 17)

The solid state imaging device of claim 17 wherein the transistor transfers an electric charge from the photodiode to a transmission line.

### Claim 19

A method for manufacturing a solid state imaging device comprising the steps of:
forming a semiconductor layer comprising a plurality of photodiodes;
forming a first antireflection film over a first surface of the semiconductor layer;
forming a second antireflection film over the first antireflection film; and
forming a light shielding layer having side surfaces,
wherein,
the side surfaces are adjacent to at least one of the first antireflection film and the second antireflection film.

### Claim 20 (depends on 19)

The method of claim 19 wherein the second antireflection film is formed after forming the light shielding layer.