# US 2014/0191346 A1 · Magnetic memory devices including magnetic layers separated by tunnel barriers

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- Number: US 2014/0191346 A1
- Document ID: US20140191346A1
- Status: Published application
- Kind: A1
- Application number: 14/206,053
- Filed: 2014-03-12
- Published: 2014-07-10
- Earliest claimed: 2009-09-11
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Sechung Oh; Jangeun Lee; Jeahyoung Lee; Woojin Kim; Woo Chang Lim; Junho Jeong; Sukhun Choi
- Web page: https://patentgrep.com/patent/US20140191346A1

## CPC

- H10N 50/80: Constructional details
- B82Y 25/00: Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
- G11C 11/16: using elements in which the storage effect is based on magnetic spin effect
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- H01F 10/123: {having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films}
- H01F 10/3254: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]}
- H01F 10/3268: {the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn}
- H01F 10/3286: {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy}
- H10N 50/10: Magnetoresistive devices
- H10N 50/85: Materials of the active region
- H01F 10/3236: {made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy (H01F10/3286 takes precedence)}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES

## Abstract

A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

## Claims

### Claim 1

A magnetic memory device comprising:
a reference layer comprising,
a first junction magnetic layer having a first saturation magnetization,
a first vertical magnetic layer having perpendicular magnetization, and
a first non-magnetic layer between the first vertical magnetic layer and the first junction magnetic layer, wherein the first junction magnetic layer is antiferromagnetically or ferromagnetically exchange coupled with the first vertical magnetic layer by the first non-magnetic layer;
a free layer comprising a second junction magnetic layer having a second saturation magnetization wherein the second saturation magnetization is less than the first saturation magnetization; and
a tunnel barrier layer between the free layer and the reference layer.

### Claim 2 (depends on 1)

The magnetic memory device of claim 1, wherein the first junction magnetic layer comprises CoFeB.

### Claim 3 (depends on 2)

The magnetic memory device of claim 2, wherein the second junction magnetic layer comprises CoFeB.

### Claim 4 (depends on 1)

The magnetic memory device of claim 1, wherein the first vertical magnetic layer comprises at least one of Cr, Pt, Pd, and Ir.

### Claim 5 (depends on 1)

The magnetic memory device of claim 1, wherein the first vertical magnetic layer comprises a multi layer of [Co/Pd]m or [Co/Pt]m, wherein the m is a stacking number of each layer and a natural number of 2 or more.

### Claim 6 (depends on 1)

The magnetic memory device of claim 1, wherein the first junction magnetic layer is in direct contact with the tunnel barrier layer.

### Claim 7 (depends on 1)

The magnetic memory device of claim 1, wherein the second junction magnetic layer is in direct contact with the tunnel barrier layer.

### Claim 8 (depends on 1)

The magnetic memory device of claim 1, wherein the free layer further comprises a second vertical magnetic layer and a second non-magnetic layer, and
wherein the second non-magnetic layer disposed between the second junction magnetic layer and the second vertical magnetic layer.

### Claim 9 (depends on 8)

The magnetic memory device of claim 8, wherein the second junction magnetic layer is antiferromagnetically or ferromagnetically exchange coupled with the second vertical magnetic layer by the second non-magnetic layer.

### Claim 10

A magnetic memory device comprising:
a magnetic layer having perpendicular magnetization;
a first junction magnetic layer;
an exchange-coupling layer disposed between the magnetic layer and the first junction magnetic layer;
a second junction magnetic layer; and
a tunnel barrier layer between the first junction magnetic layer and the second junction magnetic layer.

### Claim 11 (depends on 10)

The magnetic memory device of to claim 10, wherein the first and second junction magnetic layers comprise CoFeB.

### Claim 12 (depends on 10)

The magnetic memory device of claim 10, wherein the first junction magnetic layer is antiferromagnetically or ferromagnetically exchange coupled with the magnetic layer by the exchange-coupling layer.

### Claim 13 (depends on 10)

The magnetic memory device of claim 10, wherein the first junction magnetic layer has a first saturation magnetization and the second junction magnetic layer has a second saturation magnetization.

### Claim 14 (depends on 13)

The magnetic memory device of claim 13, wherein the first saturation magnetization is higher than the second saturation magnetization.

### Claim 15 (depends on 10)

The magnetic memory device of claim 10, wherein the exchange-coupling layer is a non-magnetic layer.

### Claim 16 (depends on 10)

The magnetic memory device of claim 10, wherein the first and second junction magnetic layers are in direct contact with the tunnel barrier layer.