# US 2014/0191332 A1 · Pfet devices with different structures and performance characteristics

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- Number: US 2014/0191332 A1
- Document ID: US20140191332A1
- Status: Published application
- Kind: A1
- Application number: 14/208,423
- Filed: 2014-03-13
- Published: 2014-07-10
- Earliest claimed: 2011-11-02
- Assignees: Globalfoundries Inc.
- Applicants: GLOBALFOUNDRIES Inc.
- Inventors: Hans-Juergen Thees; Stephan Kronholz; Peter Javorka
- Web page: https://patentgrep.com/patent/US20140191332A1

## CPC

- H10D 84/83: of only insulated-gate FETs [IGFET]
- H10B 12/00: Dynamic random access memory [DRAM] devices
- H10B 12/09: {with simultaneous manufacture of the peripheral circuit region and memory cells}
- H10D 62/235: {of IGFETs (IGFETs having buried channels H10D30/637)}
- H10D 84/0128: {Manufacturing their channels}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/8311: {the IGFETs characterised by having different channel structures}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

Disclosed herein is a device that includes a first PFET transistor formed in and above a first active region of a semiconducting substrate, a second PFET transistor formed in and above a second active region of the semiconducting substrate, wherein at least one of a thickness of the first and second channel semiconductor materials or a concentration of germanium in the first and second channel semiconductor materials are different.

## Claims

### Claim at position 1

1-19. (canceled)

### Claim 20

A device, comprising
a first PFET transistor formed in and above a first active region of a semiconducting substrate, said first PFET transistor comprising a first layer of channel semiconductor material; and
a second PFET transistor formed in and above a second active region of said semiconducting substrate, said second PFET transistor comprising a second layer of channel semiconductor material, wherein at least one of a thickness of said first and second channel semiconductor materials or a concentration of germanium in said first and second channel semiconductor materials are different.

### Claim 21 (depends on 20)

The device of claim 20, wherein said first channel semiconductor material is thicker than said second channel semiconductor material and said concentration of said germanium in said first channel semiconductor material is greater than said concentration of said germanium in said second channel semiconductor material.

### Claim 22 (depends on 20)

The device of claim 20, wherein said first channel semiconductor material is thicker than said second channel semiconductor material and said concentration of said germanium in said first channel semiconductor material is less than said concentration of said germanium in said second channel semiconductor material.

### Claim 23 (depends on 20)

The device of claim 20, wherein said first channel semiconductor material is thinner than said second channel semiconductor material and said concentration of said germanium in said first channel semiconductor material is greater than said concentration of said germanium in said second channel semiconductor material.

### Claim 24 (depends on 20)

The device of claim 20, wherein said first channel semiconductor material is thinner than said second channel semiconductor material and said concentration of said germanium in said first channel semiconductor material is less than said concentration of said germanium in said second channel semiconductor material.

### Claim 25 (depends on 20)

The device of claim 20, wherein said concentration of said germanium in said first channel semiconductor material is less than said concentration of said germanium in said second channel semiconductor material.

### Claim 26 (depends on 20)

The device of claim 20, wherein said concentration of said germanium in said first channel semiconductor material is greater than said concentration of said germanium in said second channel semiconductor material.

### Claim 27 (depends on 20)

The device of claim 20, wherein said first channel semiconductor material is thicker than said second channel semiconductor material.

### Claim 28 (depends on 20)

The device of claim 20, wherein said first channel semiconductor material is thinner than said second channel semiconductor material.

### Claim 29 (depends on 20)

The device of claim 20, wherein said first and second channel semiconductor materials are comprised of silicon germanium.

### Claim 30 (depends on 20)

The device of claim 20, further comprising an embedded DRAM device formed in and above said substrate, said embedded DRAM device having a channel formed in said substrate.

### Claim 31

A device, comprising
a first PFET transistor formed in and above a first active region of a semiconducting substrate, said first PFET transistor comprising a first layer of silicon germanium; and
a second PFET transistor formed in and above a second active region of said semiconducting substrate, said second PFET transistor comprising a second layer of silicon germanium, wherein at least one of a thickness of said first and second layers of silicon germanium or a concentration of germanium in said first and second layers of silicon germanium are different.

### Claim 32 (depends on 31)

The device of claim 31, wherein said first layer of silicon germanium is thicker than said second layer of silicon germanium and said concentration of said germanium in said first layer of silicon germanium is greater than said concentration of said germanium in said second layer of silicon germanium.

### Claim 33 (depends on 31)

The device of claim 31, wherein said first layer of silicon germanium is thicker than said second layer of silicon germanium and said concentration of said germanium in said first layer of silicon germanium is less than said concentration of said germanium in said second layer of silicon germanium.

### Claim 34 (depends on 31)

The device of claim 31, wherein said first layer of silicon germanium is thinner than said second layer of silicon germanium and said concentration of said germanium in said first layer of silicon germanium is greater than said concentration of said germanium in said second layer of silicon germanium.

### Claim 35 (depends on 31)

The device of claim 31, wherein said first layer of silicon germanium is thinner than said second layer of silicon germanium and said concentration of said germanium in said first layer of silicon germanium is less than said concentration of said germanium in said second layer of silicon germanium.

### Claim 36 (depends on 31)

The device of claim 31, wherein said concentration of said germanium in said first layer of silicon germanium is less than said concentration of said germanium in said second layer of silicon germanium.

### Claim 37 (depends on 31)

The device of claim 31, wherein said concentration of said germanium in said first layer of silicon germanium is greater than said concentration of said germanium in said second layer of silicon germanium.

### Claim 38 (depends on 37)

The device of claim 37, wherein said first layer of silicon germanium is thicker than said second layer of silicon germanium.

### Claim 39 (depends on 31)

The device of claim 31, wherein said first layer of silicon germanium is thinner than said second layer of silicon germanium.

### Claim 40 (depends on 31)

The device of claim 31, further comprising an embedded DRAM device formed in and above said substrate, said embedded DRAM device having a channel formed in said substrate.

### Claim 41

A device, comprising
a first PFET transistor formed in and above a first active region of a semiconducting substrate, said first PFET transistor comprising a first layer of silicon germanium; and
a second PFET transistor formed in and above a second active region of said semiconducting substrate, said second PFET transistor comprising a second layer of silicon germanium, wherein a thickness of said first and second layers of silicon germanium are different and a concentration of germanium in said first and second layers of silicon germanium are different.

### Claim 42 (depends on 41)

The device of claim 41, wherein said first layer of silicon germanium is thicker than said second layer of silicon germanium and said concentration of said germanium in said first layer of silicon germanium is greater than said concentration of said germanium in said second layer of silicon germanium.

### Claim 43 (depends on 41)

The device of claim 41, wherein said first layer of silicon germanium is thicker than said second layer of silicon germanium and said concentration of said germanium in said first layer of silicon germanium is less than said concentration of said germanium in said second layer of silicon germanium.

### Claim 44 (depends on 41)

The device of claim 41, wherein said first layer of silicon germanium is thinner than said second layer of silicon germanium and said concentration of said germanium in said first layer of silicon germanium is greater than said concentration of said germanium in said second layer of silicon germanium.

### Claim 45 (depends on 41)

The device of claim 41, wherein said first layer of silicon germanium is thinner than said second layer of silicon germanium and said concentration of said germanium in said first layer of silicon germanium is less than said concentration of said germanium in said second layer of silicon germanium.

### Claim 46 (depends on 41)

The device of claim 41, wherein said concentration of said germanium in said first layer of silicon germanium is less than said concentration of said germanium in said second layer of silicon germanium.

### Claim 47 (depends on 41)

The device of claim 41, wherein said concentration of said germanium in said first layer of silicon germanium is greater than said concentration of said germanium in said second layer of silicon germanium.

### Claim 48 (depends on 47)

The device of claim 47, wherein said first layer of silicon germanium is thicker than said second layer of silicon germanium.

### Claim 49 (depends on 41)

The device of claim 41, wherein said first layer of silicon germanium is thinner than said second layer of silicon germanium.