# US 2014/0191289 A1 · Image sensors with multiple output structures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191289 A1 - Document ID: US20140191289A1 - Status: Published application - Kind: A1 - Application number: 13/735,643 - Filed: 2013-01-07 - Published: 2014-07-10 - Earliest claimed: 2013-01-07 - Assignees: Truesense Imaging, Inc. - Applicants: Truesense Imaging, Inc. - Inventors: Shen Wang - Web page: https://patentgrep.com/patent/US20140191289A1 ## CPC - H10F 39/80377: {characterised by the channel of the transistor, e.g. channel having a doping gradient} - H10F 39/151: {Geometry or disposition of pixel elements, address lines or gate electrodes} - H10F 39/153: {Two-dimensional or three-dimensional array CCD image sensors} - H10F 39/1534: {Interline transfer} - H10F 39/156: {CCD or CID colour image sensors} - H10F 39/1515: {Optical shielding} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage. ## Claims ### Claim 1 An image sensor comprising: two or more pixel sub-arrays each comprising at least one output structure for conversion of charge to voltage, at least one of the sub-arrays comprising: a region of active pixels each comprising (i) a photo-sensitive region (PSR) for converting light into electrical charge and (ii) a vertical channel for transferring charge from the PSR, electrically connected to the region of active pixels, a slanted region of dark pixels each (i) comprising a vertical channel for transferring charge and (ii) shielded from incident light, electrically connected to the slanted region of dark pixels, an unslanted region of dark pixels each (i) comprising a vertical channel for transferring charge and (ii) shielded from incident light, electrically connected to the unslanted region of dark pixels, a horizontal CCD (HCCD), and electrically connected to the HCCD, an output structure for conversion of charge to voltage, wherein (i) a direction of charge transfer in the vertical channels within the dark pixels of the slanted region is not parallel to a direction of charge transfer in the vertical channels within the active pixels, and (ii) a direction of charge transfer in the vertical channels within the dark pixels of the unslanted region is substantially parallel to the direction of charge transfer in the vertical channels within the active pixels. ### Claim 2 (depends on 1) The image sensor of claim 1, wherein the direction of charge transfer in the vertical channels within dark pixels of the slanted region of a first sub-array is different from the direction of charge transfer in the vertical channels within dark pixels of the slanted region of a second sub-array different from the first sub-array. ### Claim 3 (depends on 2) The image sensor of claim 2, wherein the first sub-array adjoins the second sub-array. ### Claim 4 (depends on 1) The image sensor of claim 1, wherein, in at least one sub-array, a width of dark pixels in the slanted region is (i) approximately equal to a width of dark pixels in the unslanted region and (ii) approximately equal to a width of active pixels in the region of active pixels. ### Claim 5 (depends on 1) The image sensor of claim 1, wherein one or more dark pixels in the slanted region comprises a PSR. ### Claim 6 (depends on 1) The image sensor of claim 1, wherein one or more dark pixels in the unslanted region comprises a PSR. ### Claim 7 (depends on 1) The image sensor of claim 1, wherein a width of the vertical channel within dark pixels of the slanted region is substantially equal to a width of the vertical channel within dark pixels of the unslanted region. ### Claim 8 (depends on 1) The image sensor of claim 1, wherein one or more dark pixels in the slanted region lack a PSR. ### Claim 9 (depends on 1) The image sensor of claim 1, wherein one or more dark pixels in the unslanted region lack a PSR. ### Claim 10 (depends on 1) The image sensor of claim 1, wherein one or more of the sub-arrays comprises: a region of active pixels each comprising (i) a PSR and (ii) a vertical channel for transferring charge from the PSR; electrically connected to the region of active pixels, an unslanted region of dark pixels each (i) comprising a vertical channel for transferring charge and (ii) shielded from incident light; electrically connected to the unslanted region of dark pixels, an HCCD; and electrically connected to the HCCD, an output structure for conversion of charge to voltage, wherein a direction of charge transfer in the vertical channels within the dark pixels of the unslanted region is substantially parallel to the direction of charge transfer in the vertical channels within the active pixels. ### Claim 11 (depends on 1) The image sensor of claim 1, wherein the output structure of one sub-array is disposed within a gap between two sub-arrays formed by a slanted region of dark pixels within at least one of the two sub-arrays. ### Claim 12 (depends on 1) The image sensor of claim 1, wherein the output structures of two adjoining sub-arrays are both disposed within a gap between the two sub-arrays formed by a slanted region of dark pixels within at least one of the two sub-arrays. ### Claim 13 (depends on 1) The image sensor of claim 1, wherein the output structure of at least one of the sub-arrays comprises (i) a dummy shift register having a width substantially equal to a width of shift registers in the HCCD, (ii) a charge-carrying region having a width, along at least a portion of its length, smaller than the width of shift registers in the HCCD, (iii) a sense node, and (iv) an amplifier for conversion of charge into a voltage signal. ### Claim 14 (depends on 13) The image sensor of claim 13, wherein the charge-carrying region comprises a tapered region having a width that decreases along at least a portion of its length. ### Claim 15 (depends on 1) The image sensor of claim 1, further comprising a plurality of control gate electrodes extending across slanted regions of dark pixels of at least two sub-arrays. ### Claim 16 (depends on 1) The image sensor of claim 1, wherein the HCCD comprises a plurality of shift registers having substantially equal dimensions in a direction of charge transfer within the HCCD.