# US 2014/0191284 A1 · Group iii nitrides on nanopatterned substrates

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- Number: US 2014/0191284 A1
- Document ID: US20140191284A1
- Status: Published application
- Kind: A1
- Application number: 14/024,713
- Filed: 2013-09-12
- Published: 2014-07-10
- Earliest claimed: 2013-01-04
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Can Bayram; Devendra K. Sadana; Kuen-Ting Shiu
- Web page: https://patentgrep.com/patent/US20140191284A1

## CPC

- H10D 62/82: Heterojunctions
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/278: {Pendeoepitaxy}
- H10P 14/29: {characterised by the substrates}
- H10P 14/2904: {Silicon carbide}
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/2926: {Crystal orientations}
- H10P 14/3216: {Nitrides}
- H10P 14/3416: {Nitrides}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III nitride material is grown atop the mesa surface portions of the patterned substrate and atop the recessed surface. Growth of the Group III nitride material is continued merging the Group III nitride material that is grown atop the mesa surface portions. When the Group III nitride material located atop the mesa surface portions merge, the Group III nitride material growth on the recessed surface ceases. The merged Group III nitride material forms a first Group III nitride material structure, and the Group III nitride material formed in the recessed surface forms a second material structure. The first and second material structures are disjoined from each other and are separated by an air gap.

## Claims

### Claim 1

A semiconductor structure comprising:
a Group III nitride material structure comprising a Group III nitride material and having a planar uppermost surface and a corrugated bottommost surface opposing the planar uppermost surface, wherein said corrugated bottommost surface comprises at least two non-indented portions, and having an indented portion located between said at least two non-indented portions.

### Claim 2 (depends on 1)

The semiconductor structure of claim 1, further comprising at least one semiconductor device located on the planar uppermost surface of the Group III nitride material structure.

### Claim 3 (depends on 2)

The semiconductor structure of claim 2, further comprising another substrate located on an exposed uppermost surface of the at least one semiconductor device.

### Claim 4 (depends on 1)

The semiconductor structure of claim 1, wherein said corrugated bottommost surface is bare.

### Claim 5 (depends on 1)

The semiconductor structure of claim 1, wherein said each non-indented portion of the corrugated bottommost surface is in direct contact with a mesa surface portion of a patterned substrate.

### Claim 6 (depends on 5)

The semiconductor structure of claim 5, further comprising a second Group III nitride material structure located atop a recessed surface of the patterned substrate, said recessed surface is present in a recessed opening located in said patterned substrate and separates two neighboring mesa surface portions of the patterned substrate.

### Claim 7 (depends on 1)

The semiconductor structure of claim 1, wherein said each non-indented portion of the corrugated bottommost surface is in direct contact with a first portion of a buffer layer.

### Claim 8 (depends on 7)

The semiconductor structure of claim 7, further comprising a second Group III nitride material structure located on a second portion of the buffer layer, wherein said second portion of the buffer layer is vertically offset and beneath said first portion of the buffer layer.

### Claim 9 (depends on 8)

The semiconductor structure of claim 8, further comprising a patterned substrate located beneath said buffer layer.

### Claim 10 (depends on 1)

The semiconductor structure of claim 1, wherein said Group III nitride material comprises gallium nitride or aluminum nitride.