# US 2014/0191283 A1 · Group iii nitrides on nanopatterned substrates

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- Number: US 2014/0191283 A1
- Document ID: US20140191283A1
- Status: Published application
- Kind: A1
- Application number: 13/734,436
- Filed: 2013-01-04
- Published: 2014-07-10
- Earliest claimed: 2013-01-04
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Can Bayram; Devendra K. Sadana; Kuen-Ting Shiu
- Web page: https://patentgrep.com/patent/US20140191283A1

## CPC

- H10D 62/82: Heterojunctions
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/278: {Pendeoepitaxy}
- H10P 14/29: {characterised by the substrates}
- H10P 14/2904: {Silicon carbide}
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/2926: {Crystal orientations}
- H10P 14/3216: {Nitrides}
- H10P 14/3416: {Nitrides}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III nitride material is grown atop the mesa surface portions of the patterned substrate and atop the recessed surface. Growth of the Group III nitride material is continued merging the Group III nitride material that is grown atop the mesa surface portions. When the Group III nitride material located atop the mesa surface portions merge, the Group III nitride material growth on the recessed surface ceases. The merged Group III nitride material forms a first Group III nitride material structure, and the Group III nitride material formed in the recessed surface forms a second material structure. The first and second material structures are disjoined from each other and are separated by an air gap.

## Claims

### Claim 1

A method of forming a semiconductor structure, said method comprising:
providing a patterned substrate comprising at least two mesa surface portions and at least one recessed opening separating the at least two mesa surface portions; and
simultaneously forming a first Group III nitride material structure and a second Group III nitride material structure, wherein said first Group III nitride material structure is formed atop the at least two mesa surface portions of the patterned substrate and spans across the at least one recessed opening, and said second Group III nitride material structure is formed entirely in the at least one recessed opening, and is disjoined from said first Group III nitride material structure, and is atop a recessed surface of the patterned substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein said patterned substrate comprises (111) Si, sapphire, SiC, a Group III nitride layer, or multilayered combinations thereof.

### Claim 3 (depends on 1)

The method of claim 1, wherein said providing the patterned substrate comprises lithography and etching.

### Claim 4 (depends on 1)

The method of claim 1, wherein said at least one recessed opening has an aspect ratio from 1 to 100.

### Claim 5 (depends on 1)

The method of claim 1, further comprising forming a contiguous Group III nitride buffer layer on the exposed surfaces of the patterned substrate.

### Claim 6 (depends on 5)

The method of claim 5, wherein said forming the contiguous Group III nitride buffer layer comprises introducing an organo-Group III element containing precursor and a nitride precursor into a reactor including said patterned substrate and depositing said precursors at a temperature of 500° C. or greater.

### Claim 7 (depends on 1)

The method of claim 1, further comprising heating the patterned substrate in an atmosphere of hydrogen and prealuminizing the exposed surfaces of the patterned substrate prior to forming the first and second Group III nitride material structures.

### Claim 8 (depends on 7)

The method of claim 7, further comprising forming a contiguous AlN buffer layer on exposed surfaces of said patterned substrate, wherein said forming the contiguous AlN buffer layer comprises introducing an organoaluminum precursor and a nitride precursor and depositing said precursors at a temperature of 500° C. or greater.

### Claim 9 (depends on 1)

The method of claim 1, wherein said simultaneously forming said first Group III nitride material structure and said second Group III nitride material structure comprises metalorganic chemical vapor deposition (MOCVD), and said MOCVD is performed at a temperature from 750° C. or greater.

### Claim 10 (depends on 1)

The method of claim 1, wherein said first Group III nitride material structure has a planar uppermost surface and a corrugated bottommost surface.

### Claim 11 (depends on 1)

The method of claim 1, further comprising forming at least one semiconductor device on an exposed planar uppermost surface of the first Group III nitride material structure.

### Claim 12 (depends on 11)

The method of claim 11, further comprising bonding an uppermost surface of the at least one semiconductor device to another substrate.

### Claim 13 (depends on 12)

The method of claim 12, further comprising removing the patterned substrate that is present beneath said first Group III nitride material structure.

### Claim 14 (depends on 13)

The method of claim 13, further comprising removing the second Group III nitride material structure that is present beneath the first Group III nitride material structure.

### Claim 15 (depends on 13)

The method of claim 13, wherein a buffer layer is provided on exposed surfaces of the patterned substrate prior to simultaneously forming the first and second Group III nitride material structures and further comprising removing the buffer layer and the second Group III nitride material structure that is present beneath the first Group III nitride material structure.

### Claim at position 16

-25. (canceled)