# US 2014/0191280 A1 · Light emitting device and lighting system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191280 A1 - Document ID: US20140191280A1 - Status: Published application - Kind: A1 - Application number: 14/203,238 - Filed: 2014-03-10 - Published: 2014-07-10 - Earliest claimed: 2010-07-12 - Assignees: LG Innotek Co., Ltd. - Applicants: LG Innotek Co., Ltd. - Inventors: Hyun Kyong CHO; Ho Ki KWON - Web page: https://patentgrep.com/patent/US20140191280A1 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/8312: {extending at least partially through the bodies} - F21K 9/00: Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers - H10H 20/032: {of electrodes} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - F21K: NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting device includes a conductive support member, a first conductive layer disposed on the conductive support member, a second conductive layer disposed on the first conductive layer, a light emitting structure including a first semiconductor layer, layer disposed on the second conductive layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulation layer disposed between the first conductive layer and the second conductive layer. The first conductive layer includes a first expansion part penetrating through the second conductive layer, the second semiconductor layer and the active layer, and includes a second expansion part extending from the first expansion part and being disposed in the first semiconductor layer. The insulation layer is disposed on the lateral surface of the first expansion part, and the lateral surface of the second expansion part contacts with the first semiconductor layer. ## Claims ### Claim 1 A light emitting device comprising: a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure comprising a first semiconductor layer disposed on the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the second conductive layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulation layer disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer includes a conductive via penetrating through the second conductive layer, the second semiconductor layer and the active layer and being disposed in the first semiconductor layer, wherein the insulation layer is disposed on a lateral surface of the conductive via, wherein a height of the conductive via is greater than a height of the insulation layer disposed on the lateral surface of the conductive via, and wherein the lateral surface of the conductive via is inclined. ### Claim 2 (depends on 1) The light emitting device of claim 1, wherein an angle between the lateral surface of the conductive via and a top surface of the first conductive layer is an obtuse angle. ### Claim 3 (depends on 1) The light emitting device of claim 1, wherein the insulation layer comprises a first insulation layer disposed on the lateral surface of the conductive via and a second insulation layer disposed between the first conductive layer and the second conductive layer, and wherein an angle between the first insulation layer and the second insulation layer is an obtuse angle. ### Claim 4 (depends on 1) The light emitting device of claim 1, wherein the second conductive layer comprises one area exposed outward, and further comprising an electrode pad disposed on the exposed area. ### Claim 5 (depends on 1) The light emitting device of claim 1, comprising a passivation layer disposed on the lateral surfaces of the light emitting structure. ### Claim 6 (depends on 1) The light emitting device of claim 1, wherein the top surface of the conductive via has a roughness surface. ### Claim 7 (depends on 1) The light emitting device of claim 1, wherein the top surface of the first semiconductor layer has a roughness surface. ### Claim 8 (depends on 1) The light emitting device of claim 1, wherein the area ratio of the bottom surface of the conductive via to the top surface of the conductive via is from 1 to 2.5. ### Claim 9 (depends on 1) The light emitting device of claim 1, wherein the thickness of the insulation layer disposed on the lateral surface of the conductive via is equal to or larger than 200 nm and equal to or less than 1000 nm. ### Claim 10 (depends on 1) The light emitting device of claim 1, wherein the second conductive layer comprises at least one of a reflective layer and an ohmic layer. ### Claim 11 A light emitting device comprising: a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure comprising a first semiconductor layer disposed on the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the second conductive layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulation layer disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer includes a conductive via penetrating through the second conductive layer, the second semiconductor layer and the active layer and being disposed in the first semiconductor layer, wherein the insulation layer is disposed on a lateral surface of the conductive via, wherein a height of the conductive via is greater than a height of the insulation layer disposed on the lateral surface of the conductive via, and wherein a width of a lower portion of the conductive via is greater than a width of a upper portion of the conductive via. ### Claim 12 (depends on 11) The light emitting device of claim 11, wherein a width of the conductive via becomes narrower toward the upper portion from the lower portion. ### Claim 13 (depends on 11) The light emitting device of claim 11, comprising a passivation layer disposed on the lateral surfaces of the light emitting structure. ### Claim 14 (depends on 11) The light emitting device of claim 11, wherein the top surface of the conductive via has a roughness surface. ### Claim 15 (depends on 11) The light emitting device of claim 11, wherein the top surface of the first semiconductor layer has a roughness surface. ### Claim 16 (depends on 11) The light emitting device of claim 11, wherein the area ratio of the bottom surface of the conductive via to the top surface of the conductive via is from 1 to 2.5. ### Claim 17 (depends on 11) The light emitting device of claim 11, wherein the thickness of the insulation layer disposed on the lateral surface of the conductive via is equal to or larger than 200 nm and equal to or less than 1000 nm. ### Claim 18 A light emitting device comprising: a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure comprising a first semiconductor layer disposed on the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the second conductive layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulation layer disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer includes a conductive via penetrating through the second conductive layer, the second semiconductor layer and the active layer and being disposed in the first semiconductor layer, wherein the insulation layer is disposed on a lateral surface of the conductive via, wherein a height of the conductive via is greater than a height of the insulation layer disposed on the lateral surface of the conductive via, and wherein an area of a top surface of the second semiconductor layer is greater than an area of a bottom surface of the second semiconductor layer. ### Claim 19 (depends on 18) The light emitting device of claim 18, wherein an area of a top surface of the active layer is greater than an area of a bottom surface of the active layer, and wherein the area of the top surface of the active layer is greater than the area of the top surface of the second semiconductor layer. ### Claim 20 (depends on 19) The light emitting device of claim 19, wherein an area of a top surface of the second conductive layer is greater than an area of a bottom surface of the second conductive layer, and wherein the area of the top surface of the second semiconductor layer is greater than the area of the top surface of the second conductive layer.