# US 2014/0191279 A1 · Light emitting device and lighting system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191279 A1 - Document ID: US20140191279A1 - Status: Published application - Kind: A1 - Application number: 14/203,026 - Filed: 2014-03-10 - Published: 2014-07-10 - Earliest claimed: 2010-07-12 - Assignees: LG Innotek Co., Ltd. - Applicants: LG Innotek Co., Ltd. - Inventors: Hyun Kyong CHO; Ho Ki KWON - Web page: https://patentgrep.com/patent/US20140191279A1 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/8312: {extending at least partially through the bodies} - F21K 9/00: Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers - H10H 20/032: {of electrodes} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - F21K: NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting device includes a conductive support member, a first conductive layer disposed on the conductive support member, a second conductive layer disposed on the first conductive layer, a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulation layer disposed between the first conductive layer and the second conductive layer. The first conductive layer includes a first expansion part penetrating through the second conductive layer, the second semiconductor layer and the active layer, and includes a second expansion part extending from the first expansion part and being disposed in the first semiconductor layer. The insulation layer is disposed on the lateral surface of the first expansion part, and wherein the lateral surface of the second expansion part contacts with the first semiconductor layer. ## Claims ### Claim 1 A light emitting device comprising: a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure comprising a first semiconductor layer disposed on the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the second conductive layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulation layer comprising a first insulation layer and a second insulation layer, wherein the first conductive layer comprises: a conductive part disposed on the conductive supporting member; a first expansion part extending from the conductive part and penetrating through the second conductive layer, the second semiconductor layer and the active layer; and a second expansion part extending from the first expansion part and being disposed in the first semiconductor layer, wherein first expansion part is disposed between the conductive part and second expansion part, wherein the first insulation layer is disposed on the lateral surface of the first expansion part, wherein the second insulation layer is disposed between the first conductive layer and the second conductive layer, and wherein an area of a bottom surface of the second expansion part is greater than an area of a top surface of the first expansion part. ### Claim 2 (depends on 1) The light emitting device of claim 1, wherein a height of the first insulation layer is equal to a height of the first expansion part. ### Claim 3 (depends on 1) The light emitting device of claim 1, wherein the area ratio of the bottom surface of the second expansion part to the top surface of the first expansion part is from 1 to 1.4. ### Claim 4 (depends on 1) The light emitting device of claim 1, wherein the thickness of the first insulation layer is equal to or larger than 200 nm and equal to or less than 1000 nm. ### Claim 5 (depends on 1) The light emitting device of claim 1, wherein at least one of the top surface of the second expansion part and a top surface of the first semiconductor layer has a roughness surface. ### Claim 6 (depends on 1) The light emitting device of claim 1, comprising a passivation layer disposed on the lateral surfaces of the light emitting structure. ### Claim 7 A light emitting device comprising: a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure comprising a first semiconductor layer disposed on the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the second conductive layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulation layer comprising a first insulation layer and a second insulation layer, wherein the first conductive layer comprises: a conductive part disposed on the conductive supporting member; a first expansion part extending from the conductive part and penetrating through the second conductive layer, the second semiconductor layer and the active layer; and a second expansion part extending from the first expansion part and being disposed in the first semiconductor layer, wherein the first insulation layer is disposed on the lateral surface of the first expansion part, wherein the second insulation layer is disposed between the first conductive layer and the second conductive layer, and wherein a width of the second expansion part is greater than a width of the first expansion part. ### Claim 8 (depends on 7) The light emitting device of claim 7, wherein a height of the first insulation layer is equal to a height of the first expansion part. ### Claim 9 (depends on 7) The light emitting device of claim 7, wherein the width of the second expansion part is equal to or less than the sum of the width of the first expansion part and thicknesses of two first insulation layers. ### Claim 10 (depends on 7) The light emitting device of claim 7, wherein the width of the second expansion part is greater than the sum of the width of the first expansion part and the thicknesses of two first insulation layers. ### Claim 11 (depends on 7) The light emitting device of claim 7, wherein the thickness of the first insulation layer is equal to or larger than 200 nm and equal to or less than 1000 nm. ### Claim 12 (depends on 7) The light emitting device of claim 7, wherein at least one of the top surface of the second expansion part and a top surface of the first semiconductor layer has a roughness surface. ### Claim 13 (depends on 7) The light emitting device of claim 7, comprising a passivation layer disposed on the lateral surfaces of the light emitting structure. ### Claim 14 (depends on 7) The light emitting device of claim 7, wherein the second conductive layer comprises one area exposed outward, and further comprising an electrode pad disposed on the exposed area. ### Claim 15 A light emitting device comprising: a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure comprising a first semiconductor layer disposed on the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the second conductive layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulation layer comprising a first insulation layer and a second insulation layer, wherein the first conductive layer comprises: a conductive part disposed on the conductive supporting member; a first expansion part extending from the conductive part and penetrating through the second conductive layer, the second semiconductor layer and the active layer; and a second expansion part extending from the first expansion part and being disposed in the first semiconductor layer, wherein the first insulation layer is contact with the first expansion part, the second expansion part and the active layer, and wherein the second insulation layer is disposed between the conductive part and the second conductive layer. ### Claim 16 (depends on 15) The light emitting device of claim 15, wherein a height of the first insulation layer is equal to a height of the first expansion part. ### Claim 17 (depends on 15) The light emitting device of claim 15, wherein the second expansion part is disposed on the first insulation layer. ### Claim 18 (depends on 15) The light emitting device of claim 15, wherein the thickness of the first insulation layer is equal to or larger than 200 nm and equal to or less than 1000 nm. ### Claim 19 (depends on 15) The light emitting device of claim 15, wherein at least one of the top surface of the second expansion part and a top surface of the first semiconductor layer has a roughness surface. ### Claim 20 (depends on 15) The light emitting device of claim 15, comprising a passivation layer disposed on the lateral surfaces of the light emitting structure.