# US 2014/0191277 A1 · Light-emitting device

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- Number: US 2014/0191277 A1
- Document ID: US20140191277A1
- Status: Published application
- Kind: A1
- Application number: 14/150,418
- Filed: 2014-01-08
- Published: 2014-07-10
- Earliest claimed: 2013-01-10
- Assignees: Epistar Corporation
- Applicants: Epistar Corporation
- Inventors: Hong-Che CHEN; Chien-Fu SHEN; Chao-Hsing CHEN; Yu-Chen YANG; Jia-Kuen WANG; Chih-Nan LIN
- Web page: https://patentgrep.com/patent/US20140191277A1

## CPC

- H10H 20/831: characterised by their shape
- H10H 20/832: characterised by their material
- H10H 20/835: {Reflective materials}
- H10H 20/85: Packages
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.

## Claims

### Claim 1

A light-emitting device, comprising:
a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom, and the mesa comprises an upper surface;
a first insulating layer in the recess and on a part of the upper surface of the mesa; and
a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.

### Claim 2 (depends on 1)

The light-emitting device according to claim 1, further comprising a substrate associated with the light-emitting semiconductor stack.

### Claim 3 (depends on 1)

The light-emitting device according to claim 1, wherein the light-emitting semiconductor stack comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, wherein the active layer emits a light and the recess penetrates through the active layer.

### Claim 4 (depends on 3)

The light-emitting device according to claim 3, wherein the bottom of the recess exposes the first conductive type semiconductor layer, and the upper surface of the mesa is a surface of the second conductive type semiconductor layer.

### Claim 5 (depends on 1)

The light-emitting device according to claim 1, further comprising a second electrode at the bottom of the recess.

### Claim 6 (depends on 1)

The light-emitting device according to claim 1, further comprising a first electrode pad on the first electrode, wherein the first electrode is electrically connected to the first electrode.

### Claim 7 (depends on 6)

The light-emitting device according to claim 6, further comprising a second insulating layer between the first electrode and the first electrode pad.

### Claim 8 (depends on 1)

The light-emitting device according to claim 1, wherein the second layer is on the first insulating layer.

### Claim 9 (depends on 7)

The light-emitting device according to claim 7, wherein the second insulating layer is at a position corresponding to a position of the first insulating layer.

### Claim 10 (depends on 5)

The light-emitting device according to claim 5, further comprising a second electrode pad on the first electrode, wherein the second electrode pad is electrically connected to the second electrode.

### Claim 11 (depends on 1)

The light-emitting device according to claim 1, further comprising a second insulating layer between the first electrode and the second electrode pad.

### Claim 12 (depends on 1)

The light-emitting device according to claim 1, wherein a part of the second insulating layer directly contacts the first insulating layer.

### Claim 13 (depends on 1)

The light-emitting device according to claim 1, further comprising a passage on the second electrode.

### Claim 14 (depends on 1)

The light-emitting device according to claim 1, wherein the first conductive material is different from the second conductive material.

### Claim 15 (depends on 3)

The light-emitting device according to claim 3, wherein a reflectivity of the first layer to the light is larger than a reflectivity of the second layer to the light.

### Claim 16 (depends on 3)

The light-emitting device according to claim 3, wherein a reflectivity of the second layer to the light is larger than 60%.

### Claim 17 (depends on 1)

The light-emitting device according to claim 1, wherein the first conductive material and/or the second conductive material comprise metal.

### Claim 18 (depends on 1)

The light-emitting device according to claim 1, wherein a thickness of the first layer ranges from 500 Å to 5000 Å and/or a thickness of the second layer ranges from 2000 Å to 1.5 μm.

### Claim 19 (depends on 1)

The light-emitting device according to claim 1, wherein the first layer of the first electrode is spatially separated from the first insulating layer.

### Claim 20 (depends on 1)

The light-emitting device according to claim 1, wherein the first electrode covers the recess.