# US 2014/0191270 A1 · Light emitting device and light emitting device package

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- Number: US 2014/0191270 A1
- Document ID: US20140191270A1
- Status: Published application
- Kind: A1
- Application number: 14/203,385
- Filed: 2014-03-10
- Published: 2014-07-10
- Earliest claimed: 2011-09-01
- Assignees: Rohm Co., Ltd.
- Applicants: Rohm Co., Ltd.
- Inventors: Nobuaki MATSUI; Hirotaka OBUCHI; Yasuo NAKANISHI; Kazuaki TSUTSUMI; Takao FUJIMORI
- Web page: https://patentgrep.com/patent/US20140191270A1

## CPC

- H10H 20/856: Reflecting means
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10W 72/07554: {changes in dispositions}
- H10W 72/547: {Dispositions of multiple bond wires}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

## Claims

### Claim 1

A light emitting device comprising:
a substrate;
a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch;
an n type nitride semiconductor layer formed on the front surface of the substrate to cover the convex pattern;
a light emitting layer formed on the n type semiconductor layer, the substrate being transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer;
a p type nitride semiconductor layer formed on the light emitting layer;
a recess extending through the p type nitride semiconductor layer, the light emitting layer and at least a portion of the n type nitride semiconductor layer, the recess exposing an exposed portion of the n type nitride semiconductor layer;
a p side electrode formed on the p type nitride semiconductor layer, the p side electrode including:
a first p side electrode portion; and
a second p side electrode portion extending from the first p side electrode portion along a longitudinal direction of the substrate; and
an n side electrode formed on the exposed portion of the n type nitride semiconductor layer, the n side electrode including:
a first n side electrode portion located opposite the first p side electrode portion in a longitudinal direction of the substrate; and
a second n side electrode portion extending from the first n side electrode portion along a longitudinal direction of the substrate and parallel to the second p side electrode portion.

### Claim 2 (depends on 1)

The light emitting device of claim 1, wherein each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely arranged at the top of the convex portion with a second pitch and a base supporting the sub convex pattern, the second pitch being smaller than the first pitch.

### Claim 3 (depends on 2)

The light emitting device of claim 2, wherein the n type nitride semiconductor layer is formed to span between tops of the fine convex portions without filling spaces between adjacent fine convex portions, and the light emitting device includes spaces partitioned by the fine convex portions and the n type nitride semiconductor layer spanning between the tops of the fine convex portions.

### Claim 4 (depends on 2)

The light emitting device of claim 2, wherein the convex pattern is a micro pattern in which the base has a width in a micron order and the sub convex pattern is a nano pattern in which each of the fine convex portions has a width in a nano order.

### Claim 5 (depends on 4)

The light emitting device of claim 4, wherein the width of the base is 2 μm to 5 μm and the width of each of the fine convex portions is 15% to 40% of the width of the base.

### Claim 6 (depends on 2)

The light emitting device of claim 2, wherein a height of the base measured with respect to the front surface of the substrate is 10% to 95% of a height of the convex portions.

### Claim 7 (depends on 6)

The light emitting device of claim 6, wherein a height of the fine convex portions measured with respect to the top of the base is 5% to 90% of the height of the convex portions.

### Claim 8 (depends on 2)

The light emitting device of claim 2, wherein the base has a rectangular parallelepiped shape.

### Claim 9 (depends on 2)

The light emitting device of claim 2, wherein the fine convex portions are formed to have a cylindrical shape.

### Claim 10 (depends on 2)

The light emitting device of claim 2, wherein the first pitch of the convex pattern is 1.1 to 1.3 times of the width of the base.

### Claim 11 (depends on 2)

The light emitting device of claim 2, wherein the second pitch of the fine convex patterns is 1.1 to 1.3 times of the width of the fine convex portions.

### Claim 12 (depends on 1)

The light emitting device of claim 1, wherein a transparent electrode layer is disposed between the p type nitride semiconductor layer and the p side electrode.

### Claim 13 (depends on 1)

The light emitting device of claim 1, wherein the recess is formed by etching.

### Claim 14 (depends on 1)

The light emitting device of claim 1, wherein the first p side electrode portion is a p side pad and the second p side electrode portion is a p side metal wiring, and wherein the first n side electrode portion is a n side pad and the second n side electrode portion is a n side metal wiring.

### Claim 15 (depends on 1)

The light emitting device of claim 1, wherein occupancy of the convex pattern in a region of the front surface of the substrate is 50% to 55%.

### Claim 16 (depends on 1)

The light emitting device of claim 1, wherein the n type nitride semiconductor layer fills spaces between adjacent convex portions.

### Claim 17 (depends on 1)

The light emitting device of claim 1, wherein a height of the convex portions measured with respect to the front surface of the substrate is 1.0 μm to 2.0 μm.

### Claim 18 (depends on 1)

The light emitting device of claim 1, wherein the plurality of convex portions is arranged in a matrix form or in a zigzag pattern.

### Claim 19 (depends on 1)

The light emitting device of claim 1, wherein the light emitting device is of a face-up type in which the front surface of the substrate is directed upward, and further comprises a reflecting metal located on a rear surface of the substrate and reflecting light transmitting through the substrate.

### Claim 20 (depends on 1)

The light emitting device of claim 1, wherein the light emitting device is of a face-down type in which the front surface of the substrate is directed downward, and further comprises a reflecting metal formed on the p type nitride semiconductor layer and reflecting light transmitting through the p type nitride semiconductor layer.