# US 2014/0191269 A1 · Semiconductor light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191269 A1 - Document ID: US20140191269A1 - Status: Published application - Kind: A1 - Application number: 14/203,217 - Filed: 2014-03-10 - Published: 2014-07-10 - Earliest claimed: 2011-05-16 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Hiroshi KATSUNO; Satoshi Mitsugi; Toshiyuki Oka; Shinya Nunoue - Web page: https://patentgrep.com/patent/US20140191269A1 ## CPC - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/83: Electrodes - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/835: {Reflective materials} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/018: {Bonding of wafers} - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8585: {being an interconnection} - H10W 72/884: {Die-attach connectors and bond wires} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part. ## Claims ### Claim at position 1 1-20. (canceled) ### Claim 21 A semiconductor light emitting device comprising: a first semiconductor layer of a first conductivity type, the first semiconductor layer including a first portion and a second portion; a second electrode provided apart from the first semiconductor layer along a first direction intersecting a second direction from the first portion toward the second portion, the second electrode including a first part provided apart from the second portion along the first direction, and a second part provided apart from the first portion along the first direction; a second semiconductor layer of a second conductivity type provided between the first part and the second portion, the second semiconductor layer contacting the first part; a light emitting layer provided between the second semiconductor layer and the second portion; a first electrode including a contact part, the contact part being provided between the first portion and the second part, the contact part contacting the first portion; and a dielectric member provided between the contact part and the second electrode, and between the first semiconductor layer and the second electrode, and wherein a portion of the dielectric member is between the light emitting layer and the second electrode, a stacking body including the first semiconductor layer, the second semiconductor layer, and the light emitting layer, the stacking body has a side face, and at least a part of the side face of the stacking body being inclined with respect to the first direction, at least a part of an edge of the second semiconductor layer being covered with the dielectric member. ### Claim 22 (depends on 21) The device according to claim 21, wherein the first part is not covered with the dielectric member, and the first part has a side face, the side face crosses a plane perpendicular to the first direction, at least a part of the side face contacts the second part. ### Claim 23 (depends on 21) The device according to claim 21, wherein the first electrode includes a lead part extending from the contact part to an outside of a stacking body along a direction crossing the first direction, the stacking body including the first semiconductor layer, the second semiconductor layer, and the light emitting layer, a side face of the lead part is covered with the dielectric member, the side face of the lead part crosses a plane perpendicular to the first direction. ### Claim 24 (depends on 21) The device according to claim 21, wherein the first semiconductor layer further includes a third portion continuous with the first portion and with the second portion, the first portion provided between the second portion and the third portion, the second electrode further includes a third part apart from the third portion along the first direction, the second semiconductor layer includes a part provided between the third portion and the third part, the third part being not covered with the dielectric member, and the third part having a side face, the side face of the third part crosses the plane perpendicular to the first direction, at least a part of the side face of the third part contacts the second part. ### Claim 25 (depends on 21) The device according to claim 21, further comprising a support substrate being electrically continuous with the second electrode, the second electrode being disposed between the support substrate and the second semiconductor layer, and between the support substrate and the dielectric member, the dielectric member is not provided between the support substrate and a portion of the second electrode overlapping the second semiconductor layer when projected onto a plane perpendicular to the first direction. ### Claim 26 (depends on 21) The device according to claim 21, wherein a first area in which the contact part contacts the first portion is smaller than a second area in which the second electrode overlaps the light emitting layer when projected onto a plane perpendicular to the first direction. ### Claim 27 (depends on 21) The device according to claim 21, wherein a part of the second semiconductor layer contacts the second part. ### Claim 28 A semiconductor light emitting device comprising: a first semiconductor layer of a first conductivity type, the first semiconductor layer including a first portion and a second portion; a second electrode provided apart from the first semiconductor layer along a first direction intersecting a second direction from the first portion toward the second portion, the second electrode including a first part provided apart from the second portion along the first direction and being light reflective, and a second part provided apart from the first portion along the first direction; a second semiconductor layer of a second conductivity type provided between the first part and the second portion, the second semiconductor layer contacting the first part; a light emitting layer provided between the second semiconductor layer and the second portion; a first electrode including a contact part provided between the first portion and the second part, the contact part contacting the first portion, and a via part contacting the contact part and electrically connected with the contact part; a pad electrode electrically connected with the via part, the via part being disposed between the contact part and the pad electrode; and a dielectric member provided between the contact part and the second electrode, and between the first semiconductor layer and the second electrode, and wherein a portion of the dielectric member is between the light emitting layer and the second electrode, a stacking body including the first semiconductor layer, the second semiconductor layer, and the light emitting layer, the stacking body has a side face, and at least a part of the side face of the stacking body being inclined with respect to the first direction, and at least a part of an edge of the second semiconductor layer being covered with the dielectric member. ### Claim 29 (depends on 28) The device according to claim 28, wherein the first part is not covered with the dielectric member, and the first part has a side face, the side face crosses a plane perpendicular to the first direction, at least a part of the side face contacts the second part. ### Claim 30 (depends on 28) The device according to claim 28, wherein the first electrode includes a lead part extending from the contact part to an outside of a stacking body along a direction crossing the first direction, the stacking body including the first semiconductor layer, the second semiconductor layer, and the light emitting layer, a side face of the lead part is covered with the dielectric member, the side face of the lead part crosses a plane perpendicular to the first direction. ### Claim 31 (depends on 28) The device according to claim 28, wherein the first semiconductor layer further includes a third portion continuous with the first portion and with the second portion, the first portion provided between the second portion and the third portion, the second electrode further includes a third part apart from the third portion along the first direction, the second semiconductor layer includes a part provided between the third portion and the third part, the third part being not covered with the dielectric member, and the third part having a side face, the side face of the third part crosses the plane perpendicular to the first direction, at least a part of the side face of the third part contacts the second part. ### Claim 32 (depends on 28) The device according to claim 28, further comprising a support substrate being electrically continuous with the second electrode, the second electrode being disposed between the support substrate and the second semiconductor layer, and between the support substrate and the dielectric member, the dielectric member is not provided between the support substrate and a portion of the second electrode overlapping the second semiconductor layer when projected onto a plane perpendicular to the first direction. ### Claim 33 (depends on 28) The device according to claim 28, wherein a first area in which the contact part contacts the first portion is smaller than a second area in which the second electrode overlaps the light emitting layer when projected onto a plane perpendicular to the first direction. ### Claim 34 (depends on 28) The device according to claim 28, wherein a part of the second semiconductor layer contacts the second part.