# US 2014/0191268 A1 · Light emitting element and light emitting element package

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- Number: US 2014/0191268 A1
- Document ID: US20140191268A1
- Status: Published application
- Kind: A1
- Application number: 14/149,326
- Filed: 2014-01-07
- Published: 2014-07-10
- Earliest claimed: 2013-01-08
- Assignees: Rohm Co., Ltd.
- Applicants: Rohm Co., Ltd.
- Inventors: Tomoya EBISAWA; Tomohito KAWASE
- Web page: https://patentgrep.com/patent/US20140191268A1

## CPC

- H10H 20/833: Transparent materials
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/835: {Reflective materials}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/884: {Die-attach connectors and bond wires}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light emitting element includes: a substrate; a first conductive type semiconductor layer stacked on the substrate; a light emitting layer stacked on the first conductive type semiconductor layer; a second conductive type semiconductor layer stacked on the light emitting layer; an ITO layer stacked on the second conductive type semiconductor layer; and a reflective layer stacked on the ITO layer. The substrate is transparent to an emission wavelength of the light emitting layer, and the reflective layer includes a Ti-containing first layer stacked on the ITO layer to make contact with the ITO layer and an Al-containing second layer stacked on the first layer in an opposite side to the ITO layer.

## Claims

### Claim 1

A light emitting element comprising:
a substrate;
a first conductive type semiconductor layer stacked on the substrate;
a light emitting layer stacked on the first conductive type semiconductor layer;
a second conductive type semiconductor layer stacked on the light emitting layer;
an ITO layer stacked on the second conductive type semiconductor layer; and
a reflective layer stacked on the ITO layer,
wherein the substrate is transparent to an emission wavelength of the light emitting layer, and the reflective layer includes a Ti-containing first layer stacked on the ITO layer to make contact with the ITO layer and an Al-containing second layer stacked on the first layer in an opposite side to the ITO layer.

### Claim 2 (depends on 1)

The light emitting element of claim 1, wherein the first layer has a thickness of equal to or more than 1 nm and equal to or less than 10 nm.

### Claim 3 (depends on 2)

The light emitting element of claim 2, wherein the first layer has a thickness of equal to or less than 5 nm.

### Claim 4 (depends on 2)

The light emitting element of claim 2, wherein the first layer has a thickness of equal to or less than 2 nm.

### Claim 5 (depends on 2)

The light emitting element of claim 2, wherein the first layer has a thickness of equal to or more than 1 nm.

### Claim 6 (depends on 1)

The light emitting element of claim 1, wherein the first layer is made of TiN.

### Claim 7 (depends on 1)

The light emitting element of claim 1, wherein only the first layer is present between the second layer and the ITO layer.

### Claim 8 (depends on 1)

The light emitting element of claim 1, wherein the substrate is made of sapphire.

### Claim 9 (depends on 1)

The light emitting element of claim 1, further comprising an insulating layer covering the ITO layer and the reflective layer and electrically isolating the first conductive type semiconductor layer from the second conductive type semiconductor layer.

### Claim 10 (depends on 9)

The light emitting element of claim 9, wherein the insulating layer includes a multi-layered reflecting mirror including two or more kinds of films having different refractive indexes.

### Claim 11 (depends on 1)

A light emitting element package comprising:
the light emitting element of claim 1; and
a package covering the light emitting element to expose a light extraction surface of the substrate.

### Claim 12

A light emitting element comprising:
a substrate;
a first conductive type semiconductor layer stacked on the substrate;
a light emitting layer stacked on the first conductive type semiconductor layer;
a second conductive type semiconductor layer stacked on the light emitting layer;
an ITO layer stacked on the substrate in the opposite side to the first conductive type semiconductor layer; and
a reflective layer stacked on the ITO layer in the opposite side to the substrate,
wherein the substrate is transparent to an emission wavelength of the light emitting layer, and the reflective layer includes a Ti-containing first layer stacked on the ITO layer to make contact with the ITO layer and an Al-containing second layer stacked on the first layer in an opposite side to the ITO layer.

### Claim 13 (depends on 12)

The light emitting element of claim 12, wherein the first layer has a thickness of equal to or more than 1 nm and equal to or less than 10 nm.

### Claim 14 (depends on 13)

The light emitting element of claim 13, wherein the first layer has a thickness of equal to or less than 5 nm.

### Claim 15 (depends on 13)

The light emitting element of claim 13, wherein the first layer has a thickness of equal to or less than 2 nm.

### Claim 16 (depends on 13)

The light emitting element of claim 13, wherein the first layer has a thickness of equal to or more than 1 nm.

### Claim 17 (depends on 12)

The light emitting element of claim 12, wherein the first layer is made of TiN.

### Claim 18 (depends on 12)

The light emitting element of claim 12, wherein only the first layer is present between the second layer and the ITO layer.

### Claim 19 (depends on 12)

The light emitting element of claim 12, wherein the substrate is made of sapphire.

### Claim 20 (depends on 12)

The light emitting element of claim 12, further comprising an insulating layer covering the ITO layer and the reflective layer and electrically isolating the first conductive type semiconductor layer from the second conductive type semiconductor layer.

### Claim 21 (depends on 20)

The light emitting element of claim 20, wherein the insulating layer includes a multi-layered reflecting mirror including two or more kinds of films having different refractive indexes.

### Claim 22 (depends on 12)

A light emitting element package comprising:
the light emitting element of claim 12; and
a package covering the light emitting element to expose a light extraction surface of the substrate.