# US 2014/0191267 A1 · Light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191267 A1 - Document ID: US20140191267A1 - Status: Published application - Kind: A1 - Application number: 14/147,754 - Filed: 2014-01-06 - Published: 2014-07-10 - Earliest claimed: 2013-01-10 - Assignees: LG Innotek Co., Ltd. - Inventors: Hwan Hee JEONG - Web page: https://patentgrep.com/patent/US20140191267A1 ## CPC - H10H 20/835: {Reflective materials} - H10H 20/83: Electrodes - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10W 74/00: Encapsulations, e.g. protective coatings - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting device according to the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer. A first electrode is disposed under the light emitting structure and is electrically connected to the first conductive semiconductor layer, and a second electrode is disposed under the light emitting structure and is electrically connected to the second conductive semiconductor layer. A first contact portion is disposed through the light emitting structure and includes a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer. ## Claims ### Claim 1 A light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer provided under the first conductive semiconductor layer, and a second conductive semiconductor layer provided under the active layer; a first electrode provided under the light emitting structure and electrically connected to the first conductive semiconductor layer; a second electrode provided under the light emitting structure and electrically connected to the second conductive semiconductor layer; and a first contact portion provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer. ### Claim 2 (depends on 1) The light emitting device of claim 1, further comprising a second contact portion spaced apart from the light emitting structure and electrically connected to the second electrode. ### Claim 3 (depends on 1) The light emitting device of claim 1, wherein the first contact portion is provided through the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer. ### Claim 4 (depends on 1) The light emitting device of claim 1, wherein a bottom surface of the first electrode is located lower than a bottom surface of the second electrode. ### Claim 5 (depends on 1) The light emitting device of claim 1, wherein the second electrode comprises an ohmic contact layer and a reflective layer. ### Claim 6 (depends on 1) The light emitting device of claim 1, further comprising a first insulating layer disposed in the light emitting structure around the first contact portion. ### Claim 7 (depends on 6) The light emitting device of claim 6, wherein the first insulating layer is provided through the second conductive semiconductor layer and the active layer. ### Claim 8 (depends on 1) The light emitting device of claim 1, further comprising a second insulating layer between the first electrode and second electrode. ### Claim 9 (depends on 1) The light emitting device of claim 1, further comprising a channel layer provided around a region underneath the light emitting structure. ### Claim 10 (depends on 9) The light emitting device of claim 9, wherein the channel layer comprises an insulating material. ### Claim 11 (depends on 1) The light emitting device of claim 1, wherein the first contact portion comprises a plurality of contact portions. ### Claim 12 (depends on 11) The light emitting device of claim 11, wherein the plurality of contact portions are spaced apart from each other on the top surface of the first conductive semiconductor layer. ### Claim 13 (depends on 1) The light emitting device of claim 1, wherein the first contact portion has a width in a range of about 5 μm to about 200 μm. ### Claim 14 (depends on 1) The light emitting device of claim 1, wherein the first electrode comprises a metal layer and a conductive support member provided under the metal layer. ### Claim 15 A light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer provided under the first conductive semiconductor layer, and a second conductive semiconductor layer provided under the active layer; a first electrode provided under the light emitting structure and electrically connected to the first conductive semiconductor layer; a second electrode provided under the light emitting structure and electrically connected to the second conductive semiconductor layer; a first contact portion provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer; and a first insulating layer provided around the first contact portion, wherein the first insulating layer is provided through the second conductive semiconductor layer and the active layer. ### Claim 16 (depends on 15) The light emitting device of claim 15, further comprising a second contact portion spaced apart from the light emitting structure and electrically connected to the second electrode. ### Claim 17 (depends on 15) The light emitting device of claim 15, wherein the first contact portion is provided through the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer. ### Claim 18 (depends on 15) The light emitting device of claim 15, wherein a bottom surface of the first electrode is located lower than a bottom surface of the second electrode. ### Claim 19 A light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer provided under the first conductive semiconductor layer, and a second conductive semiconductor layer provided under the active layer; a first electrode provided under the light emitting structure and electrically connected to the first conductive semiconductor layer; a second electrode provided under the light emitting structure and electrically connected to the second conductive semiconductor layer; a plurality of first contact portions provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer; and a second contact portion spaced apart from the light emitting structure and electrically connected to the second electrode, wherein the plurality of first contact portions are spaced apart from each other on the top surface of the first conductive semiconductor layer, and a top surface of the first contact portion is located higher than a top surface of the second contact portion. ### Claim 20 (depends on 19) The light emitting device of claim 19, wherein the first contact portion has a width in a range of about 5 μm to about 200 μm.