# US 2014/0191266 A1 · Light emitting device and method of manufacturing the light emitting device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0191266 A1
- Document ID: US20140191266A1
- Status: Published application
- Kind: A1
- Application number: 14/146,335
- Filed: 2014-01-02
- Published: 2014-07-10
- Earliest claimed: 2013-01-04
- Assignees: Samsung Corning Precision Materials Co., Ltd.; Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Gae-hwang LEE; Jeong-woo PARK; Yoon-young KWON; Kyung-wook PARK; Mi-jeong SONG; Young-Zo YOO; Yong-wan JIN
- Web page: https://patentgrep.com/patent/US20140191266A1

## CPC

- H10K 30/82: Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K 50/822: characterised by their shape
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

In one example embodiment, a light emitting device includes a transparent substrate and a transparent electrode on the transparent substrate, the transparent electrode comprising at least two transparent electrode layers, the at least two transparent electrode layers being successively stacked and having different refractive indices, the refractive index of one of the at least two transparent electrode layers that is closer to the transparent substrate being higher than the refractive index of the other one of the at least two transparent electrode layers. The light emitting device further includes a light emission layer on the transparent electrode and a reflective electrode on the light emission layer.

## Claims

### Claim 1

A light emitting device comprising:
a transparent substrate;
a transparent electrode on the transparent substrate, the transparent electrode comprising at least two transparent electrode layers, the at least two transparent electrode layers being successively stacked and having different refractive indices, the refractive index of one of the at least two transparent electrode layers that is closer to the transparent substrate being higher than the refractive index of the other one of the at least two transparent electrode layers;
a light emission layer on the transparent electrode; and
a reflective electrode on the light emission layer.

### Claim 2 (depends on 1)

The light emitting device of claim 1, wherein a difference between the refractive indices of the transparent electrode layers is in a range of 0.1 through 1.0.

### Claim 3 (depends on 1)

The light emitting device of claim 1, wherein the at least two transparent electrode layers are formed of a transparent conductive material comprising at least one of tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO).

### Claim 4 (depends on 1)

The light emitting device of claim 1, wherein the at least two transparent electrode layers include a first transparent layer formed on the transparent substrate, and
a second transparent electrode layer formed on the first transparent layer.

### Claim 5 (depends on 4)

The light emitting device of claim 4, wherein the first transparent electrode layer is formed of gallium-doped zinc oxide (GZO), and the second transparent electrode layer is formed of tin-doped indium oxide (ITO).

### Claim 6 (depends on 4)

The light emitting device of claim 4, wherein a thickness of the first transparent electrode layer is in a range of 50 nm through 500 nm, and a thickness of the second transparent electrode layer is in a range of 200 nm through 2 μm.

### Claim 7 (depends on 4)

The light emitting device of claim 4, further comprising multiple nano voids formed on an upper surface of the first transparent electrode layer.

### Claim 8 (depends on 7)

The light emitting device of claim 7, wherein a size of the multiple nano voids is in a range of 5 nm through 1 μm, and a height of the multiple nano voids is in a range of 5 nm through 10 μm.

### Claim 9 (depends on 7)

The light emitting device of claim 7, wherein the multiple nano voids are filled with at least one of air and a transparent dielectric.

### Claim 10 (depends on 4)

The light emitting device of claim 4, wherein the transparent electrode further comprises:
a third transparent electrode layer on the second transparent electrode layer, wherein
a refractive index of the first transparent electrode layer is higher than a refractive index of the second transparent electrode layer, and the refractive index of the second transparent electrode layer is higher than a refractive index of the third transparent electrode layer.

### Claim 11 (depends on 10)

The light emitting device of claim 10, further comprising multiple nano voids formed on at least one of an upper surface of the first transparent electrode layer and an upper surface of the second transparent electrode layer.

### Claim 12

A method of manufacturing a light emitting device, the method comprising:
forming a transparent electrode on a transparent substrate, the transparent electrode comprising at least two transparent electrode layers, the at least two transparent electrode layers being successively stacked and having different refractive indices, the refractive index of one of the at least two transparent electrode layers that is closer to the transparent substrate being higher than the refractive index of the other one of the at least two transparent electrode layers;
forming a light emission layer on the transparent electrode; and
forming a reflective electrode on the light emission layer.

### Claim 13 (depends on 12)

The method of claim 12, wherein the forming of the transparent electrode comprises:
forming a first transparent electrode layer on the transparent substrate;
forming multiple nano voids on an upper surface of the first transparent electrode layer by using an anodizing scheme; and
forming a second transparent electrode layer on the first transparent electrode layer,
wherein a refractive index of the first transparent electrode layer is higher than a refractive index of the second transparent electrode layer.

### Claim 14 (depends on 13)

The method of claim 13, wherein a difference between the refractive indices of the first transparent electrode layer and the second transparent electrode layer is in a range of 0.1 through 1.0.

### Claim 15 (depends on 13)

The method of claim 13, wherein the first transparent electrode layer and the second transparent electrode layer are formed of a transparent conductive material comprising at least one of tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO).

### Claim 16 (depends on 13)

The method of claim 13, wherein the forming of the multiple nano voids on the upper surface of the first transparent electrode layer by using the anodizing scheme comprises:
attaching the transparent substrate on which the first transparent electrode layer is formed onto an anode;
dipping a cathode and the anode into a solution; and
applying at least one of a direct current and a pulse current to the cathode and the anode.

### Claim 17 (depends on 16)

The method of claim 16, wherein the solution is a neutral solution comprising a halogen component.

### Claim 18 (depends on 16)

The method of claim 16, wherein the solution comprises at least one of C16H36NClO4, NaF, and NH4F.

### Claim 19 (depends on 13)

The method of claim 13, wherein the forming of the transparent electrode further comprises:
forming a third transparent electrode layer on the second transparent electrode layer, wherein
the first transparent electrode layer is formed on the transparent substrate and the second transparent electrode is formed on the first transparent electrode layer, and
a refractive index of the second transparent electrode layer is higher than a refractive index of the third transparent electrode layer.

### Claim 20 (depends on 19)

The method of claim 19, wherein the forming of the transparent electrode further comprises:
forming multiple nano voids on an upper surface of the second transparent electrode layer by using an anodizing scheme.