# US 2014/0191265 A1 · Light emitting devices with improved light extraction efficiency

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- Number: US 2014/0191265 A1
- Document ID: US20140191265A1
- Status: Published application
- Kind: A1
- Application number: 14/136,171
- Filed: 2013-12-20
- Published: 2014-07-10
- Earliest claimed: 2000-09-12
- Assignees: Koninklijke Philips Electronics N.V.
- Inventors: MICHAEL D. CAMRAS; MICHAEL R. KRAMES; WAYNE L. SNYDER; FRANK M. STERANKA; ROBERT C. TABER; JOHN J. UEBBING; DOUGLAS W. POCIUS; TROY A. TROTTIER; CHRISTOPHER H. LOWERY; GERD O. MUELLER; REGINA B. MUELLER-MACH
- Web page: https://patentgrep.com/patent/US20140191265A1

## CPC

- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/835: {Reflective materials}
- H10H 20/8512: {Wavelength conversion materials}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.

## Claims

### Claim 1

A light emitting device having a stack of layers including semiconductor layers comprising an active region, said device comprising:
a transparent optical element bonded to a surface of the stack by a bonding layer, wherein the bonding layer is selected from the group consisting of glass having an optical index greater than 1.8, Schott glass SF59, Schott glass LaSF 3, and Schott glass LaSF N18.

### Claim 2 (depends on 1)

The light emitting device of claim 1 wherein a smallest ratio of a length of a base of said optical element to a length of said surface is greater than one.

### Claim 3 (depends on 1)

The light emitting device of claim 1 further comprising luminescent material included in the bonding layer.

### Claim 4 (depends on 3)

The light emitting device of claim 3 wherein the luminescent material is one of quantum dots and nanocrystals.

### Claim 5 (depends on 1)

The light emitting device of claim 1 further comprising luminescent material included in the optical element.

### Claim 6

A light emitting device having a stack of layers including semiconductor layers comprising an active region, said device comprising:
a transparent optical element bonded to a surface of the stack by a bonding layer, wherein the bonding layer is selected from the group consisting of metal oxide, tungsten oxide, titanium oxide, nickel oxide, zirconium oxide, indium tin oxide, and chromium oxide.

### Claim 7 (depends on 6)

The light emitting device of claim 6 wherein a smallest ratio of a length of a base of said optical element to a length of said surface is greater than one.

### Claim 8 (depends on 6)

The light emitting device of claim 6 further comprising luminescent material included in the bonding layer.

### Claim 9 (depends on 8)

The light emitting device of claim 8 wherein the luminescent material is one of quantum dots and nanocrystals.

### Claim 10 (depends on 6)

The light emitting device of claim 6 further comprising luminescent material included in the optical element.

### Claim 11

A light emitting device having a stack of layers including semiconductor layers comprising an active region, said device comprising:
a transparent optical element bonded to a surface of the stack by a bonding layer, wherein the bonding layer includes luminescent material,
wherein a smallest ratio of a length of a base of said optical element to a length of said surface is greater than one.

### Claim 12 (depends on 11)

The light emitting device of claim 11 wherein the luminescent material is one of quantum dots and nanocrystals.

### Claim 13 (depends on 11)

The light emitting device of claim 11 further comprising luminescent material included in the optical element.