# US 2014/0191261 A1 · Light Emitting Heterostructure with Partially Relaxed Semiconductor Layer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191261 A1 - Document ID: US20140191261A1 - Status: Published application - Kind: A1 - Application number: 14/150,930 - Filed: 2014-01-09 - Published: 2014-07-10 - Earliest claimed: 2013-01-09 - Assignees: Sensor Electronic Technology, Inc. - Applicants: Sensor Electronic Technology, Inc. - Inventors: Maxim S. Shatalov; Alexander Dobrinsky; Michael Shur; Remigijus Gaska - Web page: https://patentgrep.com/patent/US20140191261A1 ## CPC - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/81: Bodies - H10H 20/815: having stress relaxation structures, e.g. buffer layers - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/824: comprising only Group III-V materials, e.g. GaP - H01S 5/021: {Silicon based substrates} - H01S 5/0213: {Sapphire, quartz or diamond based substrates} - H01S 5/32341: {blue laser based on GaN or GaP} - H01S 2301/173: The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction - H10H 20/036: {of packages} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer. ## Claims ### Claim 1 A heterostructure comprising: a light generating structure having a first side and a second side; a n-type contact semiconductor layer located on the first side of the light generating structure; and a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer. ### Claim 2 (depends on 1) The heterostructure of claim 1, wherein the at least one of the contact semiconductor layers further includes a dislocation blocking structure adjacent to a side of the partially relaxed layer. ### Claim 3 (depends on 2) The heterostructure of claim 2, wherein the dislocation blocking structure includes a plurality of tensile sublayers alternating with a plurality of compressive sublayers. ### Claim 4 (depends on 3) The heterostructure of claim 3, wherein the heterostructure is formed of group III-V materials, and wherein the alternating tensile and compressive sublayers have the same effective lattice constant and are formed by varying at least one of: an aluminum composition or a V/III ratio, of adjacent sublayers in the dislocation blocking structure. ### Claim 5 (depends on 4) The heterostructure of claim 4, wherein the effective lattice constant corresponds to an effective lattice constant of the light generating structure. ### Claim 6 (depends on 1) The heterostructure of claim 1, further comprising: a substrate transparent to light generated by the light generating structure; and a buffer layer adjacent to the substrate, wherein at least one of: the n-type contact semiconductor layer or the p-type contact semiconductor layer is located between the light generating structure and the buffer layer. ### Claim 7 (depends on 1) The heterostructure of claim 1, wherein the partially relaxed sublayer has a lattice mismatch of at least one percent with an immediately adjacent semiconductor layer. ### Claim 8 (depends on 1) The heterostructure of claim 1, wherein the heterostructure is formed of group III-V materials, and wherein the lattice mismatch is obtained by a change in an aluminum molar content of the partially relaxed sublayer. ### Claim 9 (depends on 1) The heterostructure of claim 1, wherein a thickness of the partially relaxed sublayer is greater than a predicted critical thickness corresponding to partial relaxation. ### Claim 10 (depends on 1) The heterostructure of claim 1, further comprising a graded layer located immediately adjacent to one of the first or second sides of the light generating structure. ### Claim 11 A device comprising: a mesa structure including: a light generating structure having a first side and a second side; a n-type contact semiconductor layer located on the first side of the light generating structure; and a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer. ### Claim 12 (depends on 11) The device of claim 11, further comprising: a substrate transparent to light generated by the light generating structure; and a buffer layer adjacent to the substrate, wherein at least one of: the n-type contact semiconductor layer or the p-type contact semiconductor layer is located between the light generating structure and the buffer layer. ### Claim 13 (depends on 11) The device of claim 11, wherein the at least one of the contact semiconductor layers further includes a dislocation blocking structure adjacent to a side of the partially relaxed layer, and wherein the dislocation blocking structure includes a plurality of tensile sublayers alternating with a plurality of compressive sublayers. ### Claim 14 (depends on 13) The device of claim 13, wherein an effective lattice constant of the dislocation blocking structure corresponds to an effective lattice constant of the light generating structure. ### Claim 15 (depends on 11) The device of claim 11, wherein a thickness of the partially relaxed sublayer is greater than a predicted critical thickness corresponding to partial relaxation. ### Claim 16 (depends on 11) The device of claim 11, further comprising a graded layer located immediately adjacent to one of the first or second sides of the light generating structure. ### Claim 17 A method comprising: forming a heterostructure, the heterostructure comprising: a light generating structure having a first side and a second side; a n-type contact semiconductor layer located on the first side of the light generating structure; and a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer. ### Claim 18 (depends on 17) The method of claim 17, the heterostructure further including a dislocation blocking structure adjacent to a side of the partially relaxed layer, and wherein the dislocation blocking structure includes a plurality of tensile sublayers alternating with a plurality of compressive sublayers. ### Claim 19 (depends on 18) The method of claim 18, wherein the forming includes configuring the dislocation blocking structure such that an effective lattice constant of the dislocation blocking structure substantially matches an effective lattice constant of the light generating structure. ### Claim 20 (depends on 19) The method of claim 19, wherein the heterostructure is formed of group III-V materials, and wherein the alternating tensile and compressive sublayers have the same effective lattice constant and are formed by varying at least one of: an aluminum composition or a V/III ratio, of adjacent sublayers in the dislocation blocking structure. ### Claim 21 (depends on 18) The method of claim 18, the heterostructure further including a graded layer located immediately adjacent to one of the first or second sides of the light generating structure.