# US 2014/0191245 A1 · Light emitting device

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- Number: US 2014/0191245 A1
- Document ID: US20140191245A1
- Status: Published application
- Kind: A1
- Application number: 14/206,468
- Filed: 2014-03-12
- Published: 2014-07-10
- Earliest claimed: 2007-04-23
- Assignees: LG Innotek Co., Ltd.
- Applicants: LG Innotek Co., Ltd.
- Inventors: Tae Yun KIM
- Web page: https://patentgrep.com/patent/US20140191245A1

## CPC

- H10H 20/8252: {characterised by the dopants}
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/825: containing nitrogen, e.g. GaN
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3416: {Nitrides}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

## Claims

### Claim 1

A light emitting device comprising:
a substrate;
at least two n-type semiconductor layers on the substrate, each of the at least two n-type semiconductor layers having a different Si concentration;
a first n-type semiconductor layer on the at least two n-type semiconductor layers, the first n-type semiconductor layer having less Si concentration than 5×1018/cm3;
an active layer directly on the first n-type semiconductor layer;
a p-type semiconductor layer on the active layer; and
an electrode on the p-type semiconductor layer.

### Claim 2 (depends on 1)

The light emitting device according to claim 1, wherein the first n-type semiconductor layer has a Si concentration lower than a Si concentration of the at least two n-type semiconductor layers.

### Claim 3 (depends on 1)

The light emitting device according to claim 1, wherein the at least two n-type semiconductor layers comprises an n-type GaN layer.

### Claim 4 (depends on 1)

The light emitting device according to claim 1, further comprising an undoped GaN layer between the first n-type semiconductor layer and a top layer of the at least two n-type semiconductor layers.

### Claim 5 (depends on 1)

The light emitting device according to claim 1, wherein the first n-type semiconductor layer has a dislocation density lower than a dislocation density of the at least two n-type semiconductor layers.

### Claim 6 (depends on 1)

The light emitting device according to claim 1, further comprising a first electrode on a first portion of the first n-type semiconductor layer, and
a second electrode on the p-type semiconductor layer.

### Claim 7 (depends on 6)

The light emitting device according to claim 6, further comprising an ohmic electrode layer between the second electrode and the p-type semiconductor layer.

### Claim 8 (depends on 1)

The light emitting device according to claim 1, wherein the first n-type semiconductor layer comprises a GaN layer.

### Claim 9 (depends on 1)

The light emitting device according to claim 1, wherein the at least two n-type semiconductor layers comprise a first GaN layer and a second GaN layer disposed on the first GaN layer.

### Claim 10 (depends on 1)

The light emitting device according to claim 1, wherein the active layer comprises InGaN/GaN layer.

### Claim 11 (depends on 1)

The light emitting device according to claim 1, wherein the p-type semiconductor layer comprises a GaN layer.

### Claim 12

A light emitting device comprising:
at least two n-type semiconductor layers, each of the at least two n-type semiconductor layers having a different Si concentration;
an undoped GaN layer on a top surface of the at least two n-type semiconductor layers;
a first n-type semiconductor layer on the at least two n-type semiconductor layers, the first n-type semiconductor layer having less Si concentration than 5×1018/cm3;
an active layer directly on a first portion of the first n-type semiconductor layer;
a p-type semiconductor layer on the active layer;
a first electrode on a second portion of the first n-type semiconductor layer;
a second electrode on the p-type semiconductor layer.

### Claim 13 (depends on 12)

The light emitting device according to claim 12, wherein the first n-type semiconductor layer has a Si concentration lower than a Si concentration of the at least two n-type semiconductor layers.

### Claim 14 (depends on 12)

The light emitting device according to claim 12, wherein the at least two n-type semiconductor layers comprises an n-type GaN layer.

### Claim 15 (depends on 12)

The light emitting device according to claim 12, wherein the first n-type semiconductor layer has a dislocation density lower than a dislocation density of the at least two n-type semiconductor layers.

### Claim 16 (depends on 12)

The light emitting device according to claim 12, further comprising an ohmic electrode layer between the second electrode and the p-type semiconductor layer.

### Claim 17 (depends on 12)

The light emitting device according to claim 12, wherein the first n-type semiconductor layer comprises a GaN layer.

### Claim 18 (depends on 12)

The light emtting device according to claim 12, wherein the at least two n-type semiconductor layers comprise a first GaN layer and a second GaN layer disposed on the first GaN layer.

### Claim 19 (depends on 12)

The light emitting device according to claim 12, wherein the active layer comprises InGaN/GaN layer.

### Claim 20 (depends on 12)

The light emitting device according to claim 12, wherein the p-type semiconductor layer comprises a GaN layer.