# US 2014/0191243 A1 · Patterned articles and light emitting devices therefrom > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191243 A1 - Document ID: US20140191243A1 - Status: Published application - Kind: A1 - Application number: 13/736,372 - Filed: 2013-01-08 - Published: 2014-07-10 - Earliest claimed: 2013-01-08 - Assignees: University of Florida Research Foundation, Inc.; Sinmat, Inc. - Applicants: Sinmat, Inc.; University of Florida Research Foundation, Inc. - Inventors: RAJIV K. SINGH; PURUSHOTTAM KUMAR; DEEPIKA SINGH - Web page: https://patentgrep.com/patent/US20140191243A1 ## CPC - H10P 14/34: {Deposited materials, e.g. layers} - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A patterned article includes a substrate support having planar substrate surface portions including a substrate material having a substrate refractive index. A patterned surface is on the substrate support including a plurality of features lateral to the planar substrate surface portions protruding above a height of the planar substrate surface portions. At least a top surface of the plurality of features include an epi-blocking layer including at least one of (i) a non-single crystal material having a refractive index lower as compared to the substrate refractive index and (ii) a reflecting metal or a metal alloy (reflecting material). The epi-blocking layer is not on the planar substrate surface portions. ## Claims ### Claim 1 A light emitting diode (LED) device, comprising: a patterned article, comprising: a substrate support including planar substrate surface portions comprising a substrate material having a substrate refractive index; a patterned top surface on said substrate support including a plurality of features lateral to said planar substrate surface portions protruding above a height of said planar substrate surface portions, wherein at least a top surface of said plurality of features include an epi-blocking layer including an (i) a non-single crystal material having a refractive index lower as compared to said substrate refractive index or (ii) a reflecting metal or a metal alloy material (reflecting material), and wherein said epi-blocking layer is not on said planar substrate surface portions, and an epitaxial stack on said patterned article comprising a p-type layer, an n-type layer, and an active layer between said p-type layer and said n-type layer, wherein said epitaxial stack is epitaxially oriented with respect to said planar substrate surface portions. ### Claim 2 (depends on 1) The LED device of claim 1, wherein said substrate support has a patterned surface which further provides bottom portions for said plurality of features, and wherein said non-single crystal material or said reflecting material is on top of said bottom portions. ### Claim 3 (depends on 1) The LED device of claim 1, wherein said substrate support has a planar top surface throughout, and wherein said plurality of features consist of said non-single crystal material. ### Claim 4 (depends on 1) The LED device of claim 1, wherein said substrate material comprises sapphire, silicon carbide, gallium nitride, or silicon. ### Claim 5 (depends on 1) The LED device of claim 1, wherein said non-single crystal material comprises silicon oxide, silicon nitride, an aluminate, calcium fluoride, or magnesium fluoride. ### Claim 6 (depends on 1) The LED device of claim 1, wherein said p-type layer, said n-type layer, and said active layer all comprise III-V materials. ### Claim 7 (depends on 6) The LED device of claim 6, wherein said III-V materials all comprise GaN. ### Claim 8 (depends on 1) The LED device of claim 1, wherein said plurality of features include both said non-single crystal material and said reflecting material, wherein said reflecting material is below said non-single crystal material. ### Claim 9 (depends on 1) The LED device of claim 1, wherein a thickness of said epi-blocking layer is from 10 nm to 1,000 nm. ### Claim 10 A patterned article, comprising: a substrate support including planar substrate surface portions comprising a substrate material having a substrate refractive index; a patterned top surface on said substrate support including a plurality of features lateral to said planar substrate surface portions protruding above a height of said planar substrate surface portions, wherein at least a top surface of said plurality of features include an epi-blocking layer including a (i) non-single crystal material having a refractive index lower as compared to said substrate refractive index or (ii) a reflecting metal or a metal alloy (reflecting material), and wherein said epi-blocking layer is not on said planar substrate surface portions. ### Claim 11 (depends on 10) The patterned article of claim 10, wherein said substrate support has a patterned surface which provides bottom portions for said plurality of features, wherein said non-single crystal material or said reflecting material is on top of said bottom portions. ### Claim 12 (depends on 10) The patterned article of claim 10, wherein said substrate support has said planar substrate surface portions throughout, and wherein said plurality of features consist of said non-single crystal material or said reflecting material. ### Claim 13 (depends on 10) The patterned article of claim 10, wherein said substrate material comprises sapphire, silicon carbide, gallium nitride, or silicon. ### Claim 14 (depends on 10) The patterned article of claim 10, wherein said non-single crystal material comprises silicon oxide, silicon nitride, an aluminate, calcium fluoride, or magnesium fluoride. ### Claim 15 (depends on 10) The patterned article of claim 10, wherein said plurality of features include both said non-single crystal material and said reflecting material, and wherein said reflecting material is below said non-single crystal material. ### Claim 16 A method of forming a patterned article, comprising: providing a substrate support including planar substrate surface portions comprising a substrate material having a substrate refractive index; depositing an epi-blocking layer including at least one of (i) a non-single crystal material having a refractive index lower as compared to said substrate refractive index and (ii) a reflecting metal or a metal alloy (reflecting material) on said substrate support, and patterning said epi-blocking layer to form a patterned top surface on said substrate support including a plurality of features lateral to said planar substrate surface portions and protruding above said planar substrate surface portions, wherein at least a top surface of said plurality of features include said epi-blocking layer, and wherein said epi-blocking layer is not on said planar substrate surface portions. ### Claim 17 (depends on 16) The method of claim 16, wherein said substrate support has a planar top surface throughout, and wherein said plurality of features consist of said non-single crystal material or said reflecting material. ### Claim 18 (depends on 16) The method of claim 16, further comprising before said depositing and patterning: forming a masking layer on said substrate support, wherein said masking layer exposes a portion of a top surface of said substrate support; performing at least one of a wet etch and a dry etch process to remove an exposed part of said top surface of said substrate support to form a patterned substrate including said planar substrate surface portions and bottom feature portions for said plurality of features lateral to said planar substrate surface portions; depositing a sacrificial layer after said performing, and chemical mechanical polishing (CMP) or dry etching for selectively removing said sacrificial layer from raised portions of said plurality of features while preserving said sacrificial layer over said planar substrate surface portions. ### Claim 19 (depends on 16) The method of claim 16, wherein said substrate material comprises sapphire, silicon carbide, gallium nitride, or silicon. ### Claim 20 (depends on 16) The method of claim 16, further comprising forming an epitaxial stack on said patterned article comprising a p-type layer, an n-type layer, and an active layer between said p-type layer and said n-type layer, wherein said epitaxial stack is epitaxially oriented with respect to said planar substrate surface portions.