# US 2014/0191239 A1 · Display device

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- Number: US 2014/0191239 A1
- Document ID: US20140191239A1
- Status: Published application
- Kind: A1
- Application number: 14/204,342
- Filed: 2014-03-11
- Published: 2014-07-10
- Earliest claimed: 2002-05-13
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Satoshi Murakami; Mitsuaki Osame
- Web page: https://patentgrep.com/patent/US20140191239A1

## CPC

- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10D 30/6733: {Multi-gate TFTs}
- H10D 64/666: {the conductor further comprising additional layers}
- H10D 64/667: {the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671)}
- H10D 86/40: characterised by multiple TFTs
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/121: characterised by the geometry or disposition of pixel elements
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/871: {Self-supporting sealing arrangements}
- H10K 59/873: {Encapsulations}
- H10K 59/878: {comprising reflective means}
- H10K 2102/3026: {Top emission}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.

## Claims

### Claim 1

(canceled)

### Claim 2

A display device comprising:
a glass substrate;
a first insulating film over the glass substrate;
a first semiconductor film over the first insulating film;
a second semiconductor film over the first insulating film;
a second insulating film over the first semiconductor film and the second semiconductor film;
a first conductive film over the second insulating film, wherein the first conductive film and the first semiconductor film overlap with each other;
a second conductive film over the second insulating film, wherein the second conductive film and the second semiconductor film overlap with each other;
a first silicon nitride film over the second insulating film, the first conductive film, and the second conductive film;
an organic resin film over the first silicon nitride film;
a second silicon nitride film over the organic resin film; and
an electrode over the second silicon nitride film;
wherein the first semiconductor film and the first conductive film are provided in a pixel portion,
wherein the second semiconductor film and the second conductive film are provided out of the pixel portion,
wherein the organic resin film comprises a first region overlapping with the first semiconductor film,
wherein the organic resin film comprises a second region overlapping with the second semiconductor film,
wherein the first conductive film and the second conductive film each comprise a region functioning as a gate electrode,
wherein the first silicon nitride film comprises a first opening,
wherein the organic resin film comprises a second opening,
wherein the second silicon nitride film comprises a third opening,
wherein the first opening comprises a region overlapping with the second opening,
wherein the first opening comprises a region overlapping with the third opening,
wherein the second opening comprises a region overlapping with the third opening,
wherein the first opening is smaller than the second opening,
wherein the third opening is smaller than the second opening,
wherein the second silicon nitride film comprises a first region over an upper surface of the organic resin film and a second region facing a side surface of the organic resin film in the second opening,
wherein the first silicon nitride film comprises a region in contact with the second silicon nitride film in the second opening,
wherein the electrode is electrically connected to the first semiconductor film through the first opening and the third opening, and
wherein the electrode comprises a first region facing a side surface of the first silicon nitride film in the first opening and a second region facing a side surface of the second silicon nitride film in the third opening.

### Claim 3 (depends on 2)

The display device according to claim 2, further comprising a light emitting member over the electrode.

### Claim 4 (depends on 2)

The display device according to claim 2, comprising a protective circuit comprising the second semiconductor film and the second conductive film.

### Claim 5 (depends on 2)

The display device according to claim 2, further comprising a drain electrode over the second silicon nitride film, wherein the drain electrode is electrically connected to the first semiconductor film and the electrode.

### Claim 6 (depends on 2)

A mobile computer comprising the display device according to claim 2.

### Claim 7 (depends on 2)

A cellular phone comprising the display device according to claim 2.

### Claim 8

A display device comprising:
a glass substrate;
a first insulating film over the glass substrate;
a first semiconductor film over the first insulating film;
a second semiconductor film over the first insulating film;
a second insulating film over the first semiconductor film and the second semiconductor film;
a first conductive film over the second insulating film, wherein the first conductive film and the first semiconductor film overlap with each other;
a second conductive film over the second insulating film, wherein the second conductive film and the second semiconductor film overlap with each other;
a first barrier layer over the second insulating film, the first conductive film, and the second conductive film;
an organic resin film over the first barrier layer;
a second barrier layer over the organic resin film; and
an electrode over the second barrier layer;
wherein the first semiconductor film and the first conductive film are provided in a pixel portion,
wherein the second semiconductor film and the second conductive film are provided out of the pixel portion,
wherein the organic resin film comprises a first region overlapping with the first semiconductor film,
wherein the organic resin film comprises a second region overlapping with the second semiconductor film,
wherein the first conductive film and the second conductive film each comprise a region functioning as a gate electrode,
wherein the first barrier layer comprises a first opening,
wherein the organic resin film comprises a second opening,
wherein the second barrier layer comprises a third opening,
wherein the first opening comprises a region overlapping with the second opening,
wherein the first opening comprises a region overlapping with the third opening,
wherein the second opening comprises a region overlapping with the third opening,
wherein the first opening is smaller than the second opening,
wherein the third opening is smaller than the second opening,
wherein the second barrier layer comprises a first region over an upper surface of the organic resin film and a second region facing a side surface of the organic resin film in the second opening,
wherein the first barrier layer comprises a region in contact with the second barrier layer in the second opening,
wherein the electrode is electrically connected to the first semiconductor film through the first opening and the third opening, and
wherein the electrode comprises a first region facing a side surface of the first barrier layer in the first opening and a second region facing a side surface of the second barrier layer in the third opening.

### Claim 9 (depends on 8)

The display device according to claim 8, further comprising a light emitting member over the electrode.

### Claim 10 (depends on 8)

The display device according to claim 8, comprising a protective circuit comprising the second semiconductor film and the second conductive film.

### Claim 11 (depends on 8)

The display device according to claim 8, further comprising a drain electrode over the second barrier layer, wherein the drain electrode is electrically connected to the first semiconductor film and the electrode.

### Claim 12 (depends on 8)

A mobile computer comprising the display device according to claim 8.

### Claim 13 (depends on 8)

A cellular phone comprising the display device according to claim 8.
