# US 2014/0191229 A1 · Semiconductor structure including a zirconium oxide material

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- Number: US 2014/0191229 A1
- Document ID: US20140191229A1
- Status: Published application
- Kind: A1
- Application number: 14/158,898
- Filed: 2014-01-20
- Published: 2014-07-10
- Earliest claimed: 2012-08-31
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Dale W. Collins; D.V. Nirmal Ramaswamy; Matthew N. Rocklein; Swapnil A. Lengade
- Web page: https://patentgrep.com/patent/US20140191229A1

## CPC

- H10D 62/80: characterised by the materials
- H01G 9/04: Electrodes {or formation of dielectric layers thereon}
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Semiconductor structures including a zirconium oxide material and methods of forming the same are described herein. As an example, a semiconductor structure can include a zirconium oxide material, a perovskite structure material, and a noble metal material formed between the zirconium oxide material and the perovskite structure material.

## Claims

### Claim at position 1

1-20. (canceled)

### Claim 21

A semiconductor structure comprising:
a zirconium oxide material;
a perovskite structure material; and
a noble metal material, wherein the zirconium oxide material, the perovskite structure material, and the noble metal material are formed between a base semiconductor material and an electrode material.

### Claim 22 (depends on 21)

The semiconductor structure of claim 21, wherein the noble metal material is formed on the zirconium oxide material.

### Claim 23 (depends on 21)

The semiconductor structure of claim 21, wherein the perovskite structure material is formed on the noble metal material.

### Claim 24 (depends on 21)

The semiconductor structure of claim 21, wherein the electrode material is formed on the perovskite structure material.

### Claim 25 (depends on 21)

The semiconductor structure of claim 21, including a conductive material formed on the zirconium oxide material.

### Claim 26 (depends on 25)

The semiconductor structure of claim 25, wherein the conductive material includes Ti, Ta, W, Al, Cr, Zr, Nb, Mo, Hf, B, C, or combinations thereof.

### Claim 27 (depends on 21)

The semiconductor structure of claim 21, including a conductive material formed on the noble metal material.

### Claim 28 (depends on 27)

The semiconductor structure of claim 27, wherein the conductive material includes Ti, Ta, W, Al, Cr, Zr, Nb, Mo, Hf, B, C, or combinations thereof

### Claim 29

A method of forming a semiconductor structure comprising:
forming a zirconium oxide material;
forming a noble metal material; and
forming a perovskite structure material, wherein the zirconium oxide material, the perovskite structure material, and the noble metal material are formed between a base semiconductor material and an electrode material.

### Claim 30 (depends on 29)

The method of claim 29, wherein forming the perovskite structure material includes sputtering.

### Claim 31 (depends on 29)

The method of claim 29, wherein, forming the zirconium oxide material includes utilizing atomic layer deposition.

### Claim 32 (depends on 31)

The method of claim 31, wherein, the atomic layer deposition utilizes an oxidant.

### Claim 33 (depends on 31)

The method of claim 31, wherein, the oxidant comprises ozone.

### Claim 34 (depends on 29)

The method of claim 29, wherein forming the noble metal material includes utilizing vapor deposition.

### Claim 35 (depends on 29)

The method of claim 29, where the zirconium oxide material is formed prior to forming the perovskite structure material.

### Claim 36

A semiconductor structure comprising:
a resistance variable material;
a crystallinity promoting material that promotes crystallinity of the resistance variable material; and
a noble metal material; wherein the crystallinity promoting material, the resistance variable material, and the noble metal material are formed between a base semiconductor material and an electrode material.

### Claim 37 (depends on 36)

The semiconductor structure of claim 36, wherein the resistance variable material comprises a PCMO material.

### Claim 38 (depends on 36)

The semiconductor structure of claim 36, wherein the resistance variable material comprises (Pr0.7Ca0.3)MnO3.

### Claim 39 (depends on 36)

The semiconductor structure of claim 36, wherein the resistance variable material is configured to be programmable into different resistance states.

### Claim 40 (depends on 36)

The semiconductor structure of claim 36, wherein the resistance variable material includes a dopant.