# US 2014/0191210 A1 · Organic light-emitting diode device

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- Number: US 2014/0191210 A1
- Document ID: US20140191210A1
- Status: Published application
- Kind: A1
- Application number: 14/088,547
- Filed: 2013-11-25
- Published: 2014-07-10
- Earliest claimed: 2013-01-09
- Assignees: Ultimate Image Corporation
- Applicants: Ultimate Image Corporation
- Inventors: Chih-Feng SUNG
- Web page: https://patentgrep.com/patent/US20140191210A1

## CPC

- H10K 50/813: characterised by their shape
- H10K 71/821: {Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An organic light-emitting diode device includes a substrate, a patterned anode layer, an organic semiconductor layer and a cathode layer. The patterned anode layer is disposed on the substrate. The organic semiconductor layer is disposed to cover an upper surface and sidewalls of the patterned anode layer and the substrate, wherein a thickness of the organic semiconductor layer is greater than three times of that of the patterned anode layer. The cathode layer is disposed to cover the organic semiconductor layer.

## Claims

### Claim 1

An organic light-emitting diode (OLED) device, comprising:
a substrate;
a patterned anode layer disposed on the substrate;
an organic semiconductor layer disposed to cover an upper surface and sidewalls of the patterned anode layer and the substrate, wherein a thickness of the organic semiconductor layer is greater than three times of that of the patterned anode layer; and
a cathode layer disposed to cover the organic semiconductor layer.

### Claim 2 (depends on 1)

The OLED device as claimed in claim 1, wherein the patterned anode layer comprises a first anode layer and a second anode layer disposed on the substrate side by side, and the organic semiconductor layer also covers a substrate surface between the first anode layer and the second anode layer.

### Claim 3 (depends on 2)

The OLED device as claimed in claim 2, wherein an interval between the first anode layer and the second anode layer is greater than 3 μm.

### Claim 4 (depends on 2)

The OLED device as claimed in claim 2, wherein an interval between the first anode layer and the second anode layer is between 3˜10 μm.

### Claim 5 (depends on 1)

The OLED device as claimed in claim 1, wherein a thickness of the organic semiconductor layer is between 150˜300 nm, and a thickness of the patterned anode layer is between 40˜60 nm.

### Claim 6 (depends on 1)

The OLED device as claimed in claim 1, wherein the OLED device is used in a lighting apparatus.

### Claim 7 (depends on 1)

The OLED device as claimed in claim 1, wherein the organic semiconductor layer comprises at least a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer.

### Claim 8 (depends on 1)

The OLED device as claimed in claim 1, wherein the patterned anode layer is a transparent conductive layer.

### Claim 9 (depends on 1)

The OLED device as claimed in claim 1, wherein the substrate is a transparent substrate.