# US 2014/0191193 A1 · Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0191193 A1 - Document ID: US20140191193A1 - Status: Published application - Kind: A1 - Application number: 14/237,299 - Filed: 2012-08-02 - Published: 2014-07-10 - Earliest claimed: 2011-08-08 - Assignees: Iljin Led Co., Ltd. - Inventors: Won-Jin Choi; Jung-Won Park - Web page: https://patentgrep.com/patent/US20140191193A1 ## CPC - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/8252: {characterised by the dopants} - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading part, which is formed from nitride comprising current spreading impurities, and which is disposed on the n-type nitride layer; an activation layer disposed on the current spreading part; and a p-type nitride layer disposed on the activation layer, wherein the current spreading impurities comprise carbon (C). ## Claims ### Claim 1 A nitride semiconductor light emitting device comprising: an n-type nitride layer; a current spreading part formed of a nitride including current spreading impurities and disposed on the n-type nitride layer; an activation layer formed on the current spreading part; and a p-type nitride layer formed on the activation layer, wherein the current spreading impurities comprise carbon (C), and the current spreading part is formed by doping the current spreading impurities together with a silicon dopant. ### Claim 2 (canceled) ### Claim 3 (canceled) ### Claim 4 (depends on 1) The nitride semiconductor light emitting device according to claim 1, wherein the silicon dopant is doped in a delta doping form. ### Claim 5 (depends on 1) The nitride semiconductor light emitting device according to claim 1, wherein a thickness of the current spreading part is inversely proportional to a concentration of the current spreading impurities. ### Claim 6 (canceled) ### Claim 7 (depends on 1) The nitride semiconductor light emitting device according to claim 1, wherein the current spreading part is a nitride layer having a free hole concentration of 1×1013/cm3 to 5×1016/cm3 and guiding holes introduced into the activation layer. ### Claim 8 (canceled) ### Claim 9 (canceled) ### Claim 10 (canceled) ### Claim 11 (canceled) ### Claim 12 (canceled) ### Claim 13 (depends on 1) The nitride semiconductor light emitting device according to claim 1, wherein the current spreading part has a higher carbon concentration than at least one of other layers. ### Claim 14 (canceled) ### Claim 15 (canceled) ### Claim 16 (canceled) ### Claim 17 (depends on 13) The nitride semiconductor light emitting device according to claim 13, wherein the current spreading part is a nitride layer having a higher carbon concentration than the activation layer or the n-type nitride layer. ### Claim 18 (canceled) ### Claim 19 (canceled) ### Claim 20 A method for manufacturing a nitride semiconductor light emitting device, comprising: forming an n-type nitride layer on a substrate; forming a current spreading part on the n-type nitride layer; forming an activation layer on the current spreading part; and forming a p-type nitride layer on the activation layer, wherein the current spreading part is formed of a nitride comprising current spreading impurities, the current spreading impurities comprise carbon (C), and the current spreading part is formed by doping the current spreading impurities together with a silicon dopant. ### Claim 21 (canceled) ### Claim 22 (canceled) ### Claim 23 (depends on 20) The method for manufacturing a nitride semiconductor light emitting device according to claim 20, wherein the silicon dopant is doped in a delta doping form. ### Claim 24 (depends on 20) The method for manufacturing a nitride semiconductor light emitting device according to claim 20, wherein the current spreading part has a higher carbon concentration than the activation layer or the n-type nitride layer. ### Claim 25 (depends on 24) The method for manufacturing a nitride semiconductor light emitting device according to claim 24, wherein the current spreading part has a higher carbon concentration than other layers. ### Claim 26 (depends on 20) The method for manufacturing a nitride semiconductor light emitting device according to claim 20, wherein a thickness of the current spreading part is inversely proportional to a concentration of the current spreading impurities. ### Claim 27 (depends on 20) The method for manufacturing a nitride semiconductor light emitting device according to claim 20, wherein the current spreading impurities are contained in a concentration of 1×1016 atoms/cm3 to 1×1018 atoms/cm3 and the current spreading part has a thickness of 500 Å to 5000 Å. ### Claim 28 A nitride semiconductor light emitting device comprising: an n-type nitride layer; a current spreading part formed on the n-type nitride layer and containing current spreading impurities and a silicon (Si) dopant; an activation layer formed on the current spreading part; a p-type nitride layer formed on the activation layer, wherein the current spreading impurities comprise carbon (C), and the current spreading part has a multilayer structure formed by alternately stacking a layer having a higher carbon (C) concentration than silicon (Si) concentration and a layer having a higher silicon (Si) concentration than carbon (C) concentration. ### Claim 29 (depends on 28) The nitride semiconductor light emitting device according to claim 28, wherein a thickness of the current spreading part is inversely proportional to a concentration of the current spreading impurities. ### Claim 30 (depends on 28) The nitride semiconductor light emitting device according to claim 28, wherein the current spreading part comprises carbon (C) contained in a concentration range from 1×1016 atoms/cm3 to 1×1018 atoms/cm3 and has a total thickness of 500 Å to 5000 Å. ### Claim 31 (canceled) ### Claim 32 (depends on 28) The nitride semiconductor light emitting device according to claim 28, wherein electrons emitted from the n-type nitride layer are moved into the activation layer while spreading along an interface between the n-type nitride layer and the current spreading part. ### Claim 33 A method for manufacturing a nitride semiconductor light emitting device, comprising: forming an n-type nitride layer on a substrate; forming a current spreading part of a multilayer structure containing current spreading impurities and a silicon (Si) dopant on the n-type nitride layer; forming an activation layer on the current spreading part; and forming a p-type nitride layer on the activation layer, wherein the current spreading impurities comprise carbon (C), and the current spreading part is formed by alternately stacking a layer having a higher carbon (C) concentration than silicon (Si) concentration and a layer having a higher silicon (Si) concentration than carbon (C) concentration. ### Claim 34 (canceled) ### Claim 35 (depends on 33) The method for manufacturing a nitride semiconductor light emitting device according to claim 33, wherein the forming a current spreading part comprises: forming a nitride layer having a higher carbon (C) concentration than silicon (Si) dopant concentration by vapor epitaxy growth using a mixture of a carbon (C)-containing gas and a silicon (Si) dopant-containing gas; and forming a nitride layer having a higher silicon (Si) dopant concentration than carbon (C) concentration on the nitride layer having a higher carbon (C) concentration than the silicon (Si) dopant concentration by vapor epitaxy growth, the nitride layers being alternately stacked once or more by an in-situ manner to form the current spreading part. ### Claim 36 (depends on 33) The method for manufacturing a nitride semiconductor light emitting device according to claim 33, wherein the forming a current spreading part comprises: forming a nitride layer having a higher carbon (C) concentration than silicon (Si) dopant concentration by adjusting implantation amounts of carbon (C) and the silicon (Si) dopant through ion implantation to the nitride layer; and forming a nitride layer a higher silicon (Si) dopant concentration than carbon (C) concentration on the nitride layer having a higher carbon (C) concentration than the silicon (Si) dopant concentration through ion implantation, the nitride layers being alternately stacked once or more by an in-situ manner to form the current spreading part. ### Claim 37 (depends on 33) The method for manufacturing a nitride semiconductor light emitting device according to claim 33, wherein the current spreading part comprises carbon (C) in a density range from 1×1016 atoms/cm3 to 1×1018 atoms/cm3 and has a total thickness of 500 Å to 5000 Å.