# US 2014/0191192 A1 · Semiconductor light-emitting device

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- Number: US 2014/0191192 A1
- Document ID: US20140191192A1
- Status: Published application
- Kind: A1
- Application number: 14/235,705
- Filed: 2011-07-29
- Published: 2014-07-10
- Earliest claimed: 2011-07-29
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Sang Heon Han; Hyun Wook Shim; Je Won Kim; Chu Young Cho; Seong Ju Park; Sung Tae Kim; Jin Tae Kim; Yong Chun Kim; Sang Jun Lee
- Web page: https://patentgrep.com/patent/US20140191192A1

## CPC

- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.

## Claims

### Claim 1

A semiconductor light emitting device comprising:
an n-type semiconductor layer;
an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein;
an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and
a p-type semiconductor layer formed on the electron-blocking layer.

### Claim 2 (depends on 1)

The semiconductor light emitting device of claim 1, wherein the electron blocking layer is formed of a semiconductor material having a composition expressed by InxAlyGa1-x-yN, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1, and the individual layers in the multilayer structure of the electron blocking layer have different energy band gaps by adjusting a ratio between Al and In.

### Claim 3 (depends on 2)

The semiconductor light emitting device of claim 2, wherein the individual layers in the multilayer structure of the electron blocking layer are sequentially stacked to allow the energy band gaps thereof to be decreased in a stacking direction.

### Claim 4 (depends on 3)

The semiconductor light emitting device of claim 3, wherein the electron blocking layer has a sequentially stacked structure of AlGaN/GaN/InGaN layers.

### Claim 5 (depends on 4)

The semiconductor light emitting device of claim 4, wherein the electron blocking layer has the stacked structure of AlGaN/GaN/InGaN layers repetitively stacked therein.

### Claim 6 (depends on 3)

The semiconductor light emitting device of claim 3, wherein the electron blocking layer has a sequentially stacked structure of AlGaN/GaN/InGaN/GaN layers.

### Claim 7 (depends on 6)

The semiconductor light emitting device of claim 6, wherein the electron blocking layer has the stacked structure of AlGaN/GaN/InGaN/GaN layers repetitively stacked therein.

### Claim 8 (depends on 1)

The semiconductor light emitting device of claim 1, wherein the electron blocking layer has a superlattice structure.

### Claim 9 (depends on 8)

The semiconductor light emitting device of claim 8, wherein the individual layers of the electron blocking layer have a thickness of 0.5 nm to 20 nm.

### Claim 10 (depends on 1)

The semiconductor light emitting device of claim 1, wherein the layer, adjacent to the active layer, among the three layers included in the multilayer structure of the electron blocking layer, has an energy band gap, an inclination of which is increased in a stacking direction.

### Claim 11 (depends on 1)

The semiconductor light emitting device of claim 1, wherein the layer, adjacent to the active layer, among the three layers included in the multilayer structure of the electron blocking layer, has an energy band gap higher than that of the active layer, while allowing an inclination of the energy band gap to be decreased in a stacking direction.

### Claim 12 (depends on 1)

The semiconductor light emitting device of claim 1, further comprising:
an insulating substrate formed on a lower surface of the n-type semiconductor layer;
an n-type electrode formed on the n-type semiconductor layer exposed by removing portions of the active layer and the p-type semiconductor layer; and
a p-type electrode formed on the p-type semiconductor layer.

### Claim 13 (depends on 1)

The semiconductor light emitting device of claim 1, further comprising:
a conductive substrate formed on the p-type semiconductor layer; and
an n-type electrode formed on the n-type semiconductor layer.