# US 2014/0191185 A1 · Apparatus and method for fabricating nano resonator using laser interference lithography

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- Number: US 2014/0191185 A1
- Document ID: US20140191185A1
- Status: Published application
- Kind: A1
- Application number: 14/094,178
- Filed: 2013-12-02
- Published: 2014-07-10
- Earliest claimed: 2013-01-09
- Assignees: Korea University Industrial & Academic Collaboration Foundation; Samsung Electronics Co., Ltd.
- Applicants: Korea University Industrial & Academic Collaboration Foundation; Samsung Electronics Co., Ltd.
- Inventors: Duck Hwan KIM; In Sang SONG; Jea Shik SHIN; Ho Soo PARK; Jae-Sung RIEH; Byeong Kwon JU
- Web page: https://patentgrep.com/patent/US20140191185A1

## CPC

- B81C 1/0019: {Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182}
- B81B 3/0018: {Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators}
- B81B 3/0021: {Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00)}
- H03H 3/0072: {of microelectro-mechanical resonators or networks (micromembranes or microbeams B81B2203/01; manufacture of microstructural devices in general B81C)}
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.

## Claims

### Claim 1

A nano resonator comprising:
a gate electrode formed on a substrate; and
a line pattern formed over the gate electrode and connecting a source electrode to a drain electrode.

### Claim 2 (depends on 1)

The nano resonator of claim 1, further comprising:
a source support formed on the substrate, a side of the line pattern being formed on the source support; and
a drain support formed on the substrate, an opposite side of the line pattern being formed on the drain support.

### Claim 3 (depends on 2)

The nano resonator of claim 2, further comprising:
the source electrode formed on the side of the line pattern formed on the source support; and
the drain electrode formed on the opposite side of the line pattern formed on the drain support.

### Claim 4 (depends on 2)

The nano resonator of claim 2, wherein the source and drain supports are higher than the gate electrode.

### Claim 5

A method of fabricating a nano resonator, the method comprising:
forming a line pattern in a first substrate;
transferring the line pattern to a second substrate comprising a gate electrode; and
forming a source electrode and a drain electrode on the transferred line pattern.

### Claim 6 (depends on 5)

The method of claim 5, wherein the forming of the line pattern comprises:
forming a photoresist layer on the first substrate;
exposing the photoresist layer to a laser to form a line pattern array; and
etching the first substrate to remove a portion of the first substrate, on which the line pattern array is absent, to form the line pattern.

### Claim 7 (depends on 6)

The method of claim 6, wherein the exposing comprises:
exposing, to the laser, a portion of the photoresist layer that corresponds to a line width and a spacing of the line pattern to remove the portion of the photoresist layer and to form the line pattern array.

### Claim 8 (depends on 6)

The method of claim 6, wherein the etching comprises:
performing reactive ion etching (RIE) of an upper silicon layer of the first substrate to remove a portion of the upper silicon layer, on which the line pattern array is absent, to form the line pattern.

### Claim 9 (depends on 6)

The method of claim 6, wherein the exposing comprises:
controlling a mirror angle used to expose the photoresist layer to the laser to control a line width and a spacing of the line pattern.

### Claim 10 (depends on 5)

The method of claim 5, wherein the forming of the line pattern comprises:
forming a photoresist layer on the first substrate based on a size of the line pattern determined based on a distance between the source electrode and the drain electrode;
etching the first substrate to remove an area of the first substrate, on which the photoresist layer is absent; and
removing the photoresist layer from the etched first substrate.

### Claim 11 (depends on 10)

The method of claim 10, wherein the etching comprises:
performing reactive ion etching (RIE) of the first substrate to remove the area of the first substrate, on which the photoresist layer is absent.

### Claim 12 (depends on 5)

The method of claim 5, wherein the transferring comprises:
wet-etching the first substrate comprising a lower silicon layer, an oxide layer, and the line pattern, to remove the oxide layer.

### Claim 13 (depends on 5)

The method of claim 5, wherein the transferring comprises:
separating the line pattern from the first substrate, using a polydimethylsiloxane (PDMS) stamp.

### Claim 14 (depends on 5)

The method of claim 5, wherein the transferring comprises:
transferring one side of the line pattern to a source support corresponding to the source electrode and formed on the second substrate; and
transferring an opposite side of the line pattern to a drain support corresponding to the drain electrode and formed on the second substrate.

### Claim 15 (depends on 14)

The method of claim 14, wherein the forming of the source and drain electrodes comprises:
forming the source electrode on the one side of the line pattern transferred to the source support; and
forming the drain electrode on the opposite side of the line pattern transferred to the drain support.

### Claim 16 (depends on 5)

A non-transitory computer-readable storage medium storing a program comprising instructions to cause a computer to perform the method of claim 5.

### Claim 17

An apparatus that fabricates a nano resonator, the apparatus comprising:
a line pattern forming unit configured to form a line pattern in a first substrate;
a line pattern transferring unit configured to transfer the line pattern to a second substrate comprising a gate electrode; and
an electrode forming unit configured to form a source electrode and a drain electrode on the transferred line pattern.

### Claim 18 (depends on 17)

The apparatus of claim 17, wherein the line pattern forming unit comprises:
a photoresist layer forming unit configured to form a photoresist layer on the first substrate;
a pattern array forming unit configured to expose the photoresist layer to a laser to form a line pattern array; and
a pattern forming unit configured to etch the first substrate to remove a portion of the first substrate, upon which the line pattern array is absent, to form the line pattern.

### Claim 19 (depends on 18)

The apparatus of claim 18, wherein the pattern array forming unit is further configured to:
expose, to the laser, a portion of the photoresist layer that corresponds to a line width and a spacing of the line pattern to remove the portion of the photoresist layer and to form the line pattern array.

### Claim 20 (depends on 18)

The apparatus of claim 18, wherein the pattern array forming unit is further configured to:
control a mirror angle used to expose the photoresist layer to the laser to control a line width and a spacing of the line pattern.