# US 2014/0191184 A1 · Nonvolatile variable resistance device and method of manufacturing the nonvolatile variable resistance element

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- Number: US 2014/0191184 A1
- Document ID: US20140191184A1
- Status: Published application
- Kind: A1
- Application number: 14/209,169
- Filed: 2014-03-13
- Published: 2014-07-10
- Earliest claimed: 2011-02-15
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Takashi YAMAUCHI; Shosuke Fujii; Reika Ichihara
- Web page: https://patentgrep.com/patent/US20140191184A1

## CPC

- H10N 70/841: {Electrodes}
- H10B 63/30: {comprising selection components having three or more electrodes, e.g. transistors}
- H10B 63/80: {Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays}
- H10N 70/023: {by chemical vapor deposition, e.g. MOCVD, ALD}
- H10N 70/041: {Modification of switching materials after formation, e.g. doping (shaping H10N70/061)}
- H10N 70/245: {the species being metal cations, e.g. programmable metallization cells}
- H10N 70/884: {based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883)}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer.

## Claims

### Claim 1

A nonvolatile variable resistance device comprising:
a first electrode;
a second electrode including a metal element;
a first layer arranged between the first electrode and the second electrode and including a semiconductor element; and
a second layer inserted between the second electrode and the first layer and including the semiconductor element, percentage of the semiconductor element being unterminated being higher in the second layer than in the first layer.

### Claim 2 (depends on 1)

The nonvolatile variable resistance device according to claim 1, wherein the percentage of the semiconductor element being unterminated in the second layer is five or more times as high as that in the first layer.

### Claim 3 (depends on 1)

The nonvolatile variable resistance device according to claim 1, wherein the first layer is formed of silicon atoms terminated by hydrogen.

### Claim 4 (depends on 3)

The nonvolatile variable resistance device according to claim 3, wherein the first electrode is impurity-doped silicon.

### Claim 5 (depends on 4)

The nonvolatile variable resistance device according to claim 4, wherein the second electrode is selected out of Ag, Au, Ti, Ni, Co, Al, Fe, Cr, cu, W, Hf, Ta, Pt, Ru, Zr, and Ir.

### Claim 6 (depends on 1)

The nonvolatile variable resistance device according to claim 1, wherein the nonvolatile variable resistance device changes from a high-resistance state to a low-resistance state when a conductive filament formed of the metal element is formed in the first layer and changes from the low-resistance state to the high-resistance state when the conductive filament in the first layer is reduced.

### Claim 7 (depends on 1)

The nonvolatile variable resistance device according to claim 1, wherein a stacked structure of the first electrode, the first layer, the second layer, and the second electrode is arranged at a cross point of a word line and a bit line.

### Claim 8 (depends on 7)

The nonvolatile variable resistance device according to claim 7, further comprising a rectifying device arranged between the word line and the bit line.