# US 2014/0191183 A1 · Resistive random access memory

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- Number: US 2014/0191183 A1
- Document ID: US20140191183A1
- Status: Published application
- Kind: A1
- Application number: 14/150,028
- Filed: 2014-01-08
- Published: 2014-07-10
- Earliest claimed: 2013-01-08
- Assignees: National Tsing Hua University
- Applicants: National Tsing Hua University
- Inventors: Yu-Lun CHUEH; Chi-Hsin HUANG
- Web page: https://patentgrep.com/patent/US20140191183A1

## CPC

- H10N 70/8833: {Binary metal oxides, e.g. TaOx}
- H10N 70/021: {Formation of switching materials, e.g. deposition of layers}
- H10N 70/20: Multistable switching devices, e.g. memristors
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- H10B 63/22: {of the metal-insulator-metal type}
- H10B 63/80: {Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.

## Claims

### Claim 1

A resistive random access memory, comprising:
a first electrode;
a second electrode opposite to the first electrode; and
a first metal oxide composite layer disposed between the first electrode and the second electrode, wherein the first metal oxide composite layer has a film layer and a nanorod structure.

### Claim 2 (depends on 1)

The resistive random access memory of claim 1, wherein the nanorod structure comprises a plurality of nanorods, and the longitudinal axis of at least one of the nanorods is substantially perpendicular to the film layer.

### Claim 3 (depends on 1)

The resistive random access memory of claim 1, wherein at least part of the nanorod structure is disposed between the second electrode and the film layer.

### Claim 4 (depends on 1)

The resistive random access memory of claim 1, wherein the material of the film layer and the nanorod structure comprises ZnO, NiO, TiO2, CuOX, WOX, FeOX, HfO2, TaOX or SrTiOX.

### Claim 5 (depends on 1)

The resistive random access memory of claim 1, wherein the film layer and the nanorod structure are made of the same material or different materials.

### Claim 6 (depends on 1)

The resistive random access memory of claim 1, wherein the film layer has a first thickness ranged between 25 nm and 200 nm.

### Claim 7 (depends on 1)

The resistive random access memory of claim 1, wherein the nanorod structure has a second thickness ranged between 50 nm and 500 nm.

### Claim 8 (depends on 1)

The resistive random access memory of claim 1, wherein the film layer is disposed on the first electrode by sputtering.

### Claim 9 (depends on 1)

The resistive random access memory of claim 1, wherein the nanorod structure is disposed on the film layer by chemical bath deposition or hydrothermal method.

### Claim 10 (depends on 1)

The resistive random access memory of claim 1, wherein the material of the first electrode and the second electrode comprises Pt, Pd, Os, Ir, Rh, Ru, Ti, Cu, Al, Ni, Au, Ag, or their combinations.