# US 2014/0191155 A1 · Composition and method for polishing polysilicon

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- Number: US 2014/0191155 A1
- Document ID: US20140191155A1
- Status: Published application
- Kind: A1
- Application number: 14/209,110
- Filed: 2014-03-13
- Published: 2014-07-10
- Earliest claimed: 2010-12-17
- Applicants: Cabot Microelectronics Corporation
- Inventors: Brian REISS; Timothy JOHNS; Michael WHITE; Lamon JONES; John CLARK
- Web page: https://patentgrep.com/patent/US20140191155A1

## CPC

- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- C09K 3/1463: {Aqueous liquid suspensions}
- H10P 52/403: {of conductive or resistive materials}
- H10P 90/129: {by polishing}
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

## Claims

### Claim 1

A chemical-mechanical polishing composition consisting essentially of:
(a) about 0.5 wt. % to about 20 wt. % of silica,
(b) about 0.005 wt % to about 2 wt. % of one or more aminophosphonic acids,
(c) about 0.001 wt. % to about 0.1 wt. % of one or more polysaccharides,
(d) about 0.05 wt. % to about 5 wt. % of one or more tetraalkylammonium salts,
(e) about 0.01 wt. % to about 2 wt. % of a bicarbonate salt,
(f) about 0.005 wt. % to about 2 wt. % of one or more compounds comprising an azole ring,
(g) optionally potassium hydroxide, and
(h) water,
wherein the polishing composition has a pH of about 7 to about 11.

### Claim 2 (depends on 1)

The polishing composition of claim 1, wherein the silica is wet-process silica.

### Claim 3 (depends on 1)

The polishing composition of claim 1, wherein the polishing composition contains about 0.1 wt. % to about 1 wt % of one or more aminophosphonic acids

### Claim 4 (depends on 3)

The polishing composition of claim 3, wherein the aminophosphonic acid is selected from the group consisting of ethylenediaminetetra(methylene phosphonic acid), amino tri(methylene phosphonic acid), diethylenetriaminepenta(methylene phosphonic acid), and combinations thereof.

### Claim 5 (depends on 4)

The polishing composition of claim 4, wherein the aminophosphonic acid is amino tri(methylene phosphonic acid).

### Claim 6 (depends on 1)

The polishing composition of claim 1, wherein the polysaccharide is hydroxyethylcellulose.

### Claim 7 (depends on 6)

The polishing composition of claim 6, wherein the hydroxyethylcellulose has a molecular weight of about 25,000 daltons to about 100,000 daltons.

### Claim 8 (depends on 1)

The polishing composition of claim 1, wherein the compound comprising an azole ring is a triazole compound.

### Claim 9 (depends on 1)

The polishing composition of claim 1, wherein potassium hydroxide is present in the polishing composition.