# US 2014/0190932 A1 · Self-formed nanometer channel at wafer scale

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- Number: US 2014/0190932 A1
- Document ID: US20140190932A1
- Status: Published application
- Kind: A1
- Application number: 13/738,298
- Filed: 2013-01-10
- Published: 2014-07-10
- Earliest claimed: 2013-01-10
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Ali Afzali-Ardakani; Binquan Luan; Gustavo A. Stolovitzky; Chao Wang; Deqiang Wang
- Web page: https://patentgrep.com/patent/US20140190932A1

## CPC

- H01B 13/06: Insulating conductors or cables (H01B13/32 takes precedence)
- B82Y 40/00: Manufacture or treatment of nanostructures
- G01N 33/48721: {Investigating individual macromolecules, e.g. by translocation through nanopores (Coulter counters in general G01N15/12; fabrication methods for nanoscale apertures B81B1/00; sequencing of nucleic acids C12Q1/68)}
- Y10S 977/70: Nanostructure
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.

## Claims

### Claim at position 1

1-20. (canceled)

### Claim 21

A nanodevice with nanochannels, the nanodevice comprising:
an electrically insulating film deposited on a substrate;
a nanowire patterned on the electrically insulating film;
an electrically insulating material deposited on both the nanowire and the electrically insulating film;
a first circular hole formed in the electrically insulating material as an inlet, the first circular hole formed over a first tip of the nanowire, the first circular hole exposing the first tip;
a second circular hole formed as an outlet, the second circular hole formed over a second tip of the nanowire opposite the first tip, the second circular hole exposing the second tip;
a nanochannel formed connecting the first circular hole to the second circular hole by etching away the nanowire via flowing an etchant in the first circular hole and out the second circular hole;
a first reservoir attached over the first circular hole to be in connection with the nanochannel at a previous location of the first tip; and
a second reservoir attached over the second circular hole to be in connection with the nanochannel at a previous location of the second tip.

### Claim 22 (depends on 21)

The nanodevice of claim 21, wherein the nanochannel is self-formed by removing the nanowire.

### Claim 23 (depends on 21)

The nanodevice of claim 21, wherein the first circular hole is both the inlet for flowing the etchant to form the nanochannel and the inlet for driving a molecule from the first reservoir into the nanochannel; and
wherein the second circular hole is both the outlet for exiting the etchant to form the nanochannel and the outlet for driving the molecule from the nanochannel into the second reservoir.

### Claim 24 (depends on 21)

The nanodevice of claim 21, wherein the first circular hole is a first connection from the first reservoir to the nanochannel; and
wherein the second circular hole is a second connection from the second reservoir to the nano channel.

### Claim 25 (depends on 21)

The nanodevice of claim 21, wherein the nanowire is a carbon nanotube;
wherein the etchant removes the carbon nanotube to leave the nano channel;
wherein a diameter of the nanochannel is caused by and corresponds to a diameter of the carbon nanotube;
wherein a length of the nanochannel is caused by and corresponds to a length of the carbon nanotube; and
wherein a first depth of the first circular hole is down to the carbon nanotube at the first tip without reaching the substrate; and
wherein a second depth of the second circular hole is down to the carbon nanotube at the second tip without reaching the substrate.