# US 2014/0190822 A1 · Wafer processing deposition shielding components

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- Number: US 2014/0190822 A1
- Document ID: US20140190822A1
- Status: Published application
- Kind: A1
- Application number: 14/204,873
- Filed: 2014-03-11
- Published: 2014-07-10
- Earliest claimed: 2008-04-16
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Martin Lee RIKER; Keith A. MILLER; Anantha K. SUBRAMANI
- Web page: https://patentgrep.com/patent/US20140190822A1

## CPC

- C23C 16/4585: {Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds}
- C23C 14/34: Sputtering
- C23C 14/50: Substrate holders
- C23C 14/564: {Means for minimising impurities in the coating chamber such as dust, moisture, residual gases}
- H01J 37/32623: {Mechanical discharge control means}
- H01J 37/32633: {Baffles}
- H01J 37/3408: {Planar magnetron sputtering}
- H01J 37/3441: {Dark space shields}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

## Claims

### Claim 1

A cover ring for encircling and at least partially shadowing a deposition ring from sputtering deposits, comprising:
an annular wedge, comprising:
a top surface;
an inclined top surface sloped radially inward and coupled with the top surface having an inner periphery and an outer periphery; and
a bottom surface to rest upon a ledge of a deposition ring, wherein the top surface is substantially parallel to the bottom surface;
a projecting brim coupled with the top surface by the inclined top surface, wherein the inclined top surface in cooperation with the projecting brim, block line-of-sight deposition from exiting the interior volume and entering the chamber body cavity; and
an inner cylindrical band and an outer cylindrical band extending downward from the annular wedge, the inner cylindrical band having a smaller height than the outer cylindrical band.

### Claim 2 (depends on 1)

The cover ring of claim 1, further comprising a sloped step located below the inclined top surface of the annular wedge and coupling the projecting brim with the bottom surface.

### Claim 3 (depends on 2)

The cover ring of claim 2, wherein the sloped step extends downwardly from the annular wedge and radially outward from the inner periphery.

### Claim 4 (depends on 3)

The cover ring of claim 3, wherein the sloped step is slanted at an angle relative to the bottom surface between about 40 degrees and about 50 degrees.

### Claim 5 (depends on 1)

The cover ring of claim 1, wherein the cover ring is fabricated from a material selected from the group comprising stainless steel, titanium, aluminum, aluminum oxide, and combinations thereof.

### Claim 6 (depends on 1)

The cover ring of claim 1, wherein a surface of the cover ring is treated with a twin-wire aluminum arc-spray coating.

### Claim 7 (depends on 1)

The cover ring of claim 1, wherein the cover ring has an outer diameter between about 14.5 inches and about 15 inches and an inner diameter between about 11.5 inches and about 12.5 inches and wherein the inclined top surface is slanted at an angle relative to the top surface between about 5 degrees and about 15 degrees.
