# US 2014/0190564 A1 · Heterojunction iii-v solar cell performance

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- Number: US 2014/0190564 A1
- Document ID: US20140190564A1
- Status: Published application
- Kind: A1
- Application number: 14/147,939
- Filed: 2014-01-06
- Published: 2014-07-10
- Earliest claimed: 2011-07-11
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Stephen W. Bedell; Bahman Hekmatshoartabari; Devendra K. Sadana; Ghavam G. Shahidi; Davood Shahrjerdi
- Web page: https://patentgrep.com/patent/US20140190564A1

## CPC

- H10F 10/17: Photovoltaic cells having only PIN junction potential barriers
- H10F 10/164: comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- Y02E 10/544: Solar cells from Group III-V materials
- Y02E 10/548: Amorphous silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

An InxGa1-xAs interlayer is provided between a III-V base and an intrinsic amorphous semiconductor layer of a heterojunction III-V solar cell structure. Improved surface passivation and open circuit voltage may be obtained through the incorporation of the interlayer within the structure.

## Claims

### Claim at position 1

1-10. (canceled)

### Claim 11

A heterojunction III-V solar cell structure, comprising:
a base layer comprising one of GaAs and InyGa1-yAs;
an intrinsic semiconductor layer;
an epitaxial InxGa1-xAs interlayer between and interfacing with the base layer and the intrinsic semiconductor layer, wherein 0.01<x<1.0 and y<x, the base layer and the InxGa1-xAs interlayer having the same doping type;
a doped hydrogenated amorphous silicon layer on the intrinsic semiconductor layer, the doped hydrogenated amorphous silicon layer having a doping type with respect to the base layer to function as one of an emitter or back surface field operatively associated with the base layer, and
a transparent conductive layer on the doped hydrogenated amorphous silicon layer.

### Claim 12 (depends on 11)

The heterojunction III-V solar cell structure of claim 11 wherein the base layer comprises GaAs.

### Claim 13 (depends on 11)

The heterojunction III-V solar cell structure of claim 11 wherein the base layer comprises InyGa1-yAs.

### Claim 14 (depends on 11)

The heterojunction III-V solar cell structure of claim 11, wherein 0.05<x<0.8.

### Claim 15 (depends on 14)

The heterojunction III-V solar cell structure of claim 14, wherein the intrinsic semiconductor layer comprises hydrogenated amorphous silicon.

### Claim 16 (depends on 15)

The heterojunction III-V solar cell structure of claim 15, wherein the hydrogenated amorphous silicon in the intrinsic semiconductor layer comprises germanium and carbon atoms.

### Claim 17 (depends on 15)

The heterojunction III-V solar cell structure of claim 15, wherein the InxGa1-xAs interlayer has a thickness between 5-50 nm.

### Claim 18 (depends on 11)

The heterojunction III-V solar cell structure of claim 11, wherein the InxGa1-xAs interlayer has a thickness between 5-50 nm.

### Claim 19 (depends on 11)

The heterojunction III-V solar cell structure of claim 11, wherein the hydrogenated amorphous silicon layer has a doping type opposite to the doping type of the base layer and is functional as an emitter operatively associated with the base layer.

### Claim 20 (depends on 11)

The heterojunction III-V solar cell structure of claim 11, wherein 0.05<x<0.8 and the intrinsic semiconductor layer comprises a plurality of hydrogenated amorphous silicon layers.

### Claim 21 (depends on 11)

The heterojunction III-V solar cell structure of claim 11, wherein the base layer comprises GaAs and the intrinsic semiconductor layer comprises hydrogenated amorphous silicon.

### Claim 22

A heterojunction III-V solar cell structure, comprising:
a base layer comprising gallium arsenide;
an intrinsic semiconductor layer;
an epitaxial InxGa1-xAs interlayer between and interfacing with the base layer and the intrinsic semiconductor layer, wherein 0.01<x<1.0;
a doped hydrogenated amorphous silicon layer on the intrinsic semiconductor layer, and
a transparent conductive layer above the hydrogenated amorphous silicon layer,
the base layer and the InxGa1-xAs interlayer having a first doping type, the doped hydrogenated amorphous silicon layer having a second doping type opposite from the first doping type and being operatively associated with the base layer as an emitter.

### Claim 23 (depends on 22)

The heterojunction III-V solar cell structure of claim 22, wherein 0.05<x<0.8.

### Claim 24 (depends on 22)

The heterojunction III-V solar cell structure of claim 22 wherein the intrinsic semiconductor layer comprises hydrogenated amorphous silicon.

### Claim 25 (depends on 24)

The heterojunction III-V solar cell structure of claim 24 where in the InxGa1-xAs interlayer has a thickness between 5-50 nm.