# US 2014/0190560 A1 · Back-side electrode of p-type solar cell

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- Number: US 2014/0190560 A1
- Document ID: US20140190560A1
- Status: Published application
- Kind: A1
- Application number: 13/737,091
- Filed: 2013-01-09
- Published: 2014-07-10
- Earliest claimed: 2013-01-09
- Assignees: E. I. Du Pont de Nemours and Company
- Applicants: E I Du Pont De Nemours and Company
- Inventors: AKIRA INABA; Takeshi Kondo
- Web page: https://patentgrep.com/patent/US20140190560A1

## CPC

- H10F 77/211: {for photovoltaic cells}
- C03C 8/16: with vehicle or suspending agents, e.g. slip
- C03C 8/18: containing free metals
- H01B 1/02: mainly consisting of metals or alloys
- H01B 1/16: the conductive material comprising metals or alloys
- H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers
- Y02E 10/547: Monocrystalline silicon PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A back-side aluminum electrode adjacently formed on silicon wafer of p-type solar cell, comprising, (a) first aluminum layer and (b) second aluminum layer, wherein (a) first aluminum layer formed adjacent to the silicon wafer, formed from first aluminum paste comprises aluminum powder and glass frit, wherein the weight ratio of the glass frit for the aluminum powder (glass/aluminum) is 0.02-1.0, and wherein (b) second aluminum layer formed adjacent to the first aluminum layer, formed from second aluminum paste comprises at least aluminum powder, wherein the weight ratio (glass/aluminum) of the second aluminum paste is less than the weight ratio(glass/aluminum) of the first aluminum paste.

## Claims

### Claim 1

A back-side aluminum electrode adjacenty formed on silicon wafer of p-type solar cell, comprising (a) first aluminum layer and (b) second aluminum layer,
wherein (a) first aluminum layer formed on the silicon wafer, formed from first aluminum paste comprises aluminum powder and glass frit,
wherein the weight ratio of the glass frit for the aluminum powder (glass/aluminum) is 0.02-1.0, and
wherein (b) second aluminum layer formed on the first aluminum layer, formed from second aluminum paste comprises at least aluminum powder,
wherein the weight ratio (glass/aluminum) of the second aluminum paste is less than the weight ratio (glass/aluminum) of the first aluminum paste.

### Claim 2 (depends on 1)

The back-side electrode according to claim 1, wherein the thickness of the back-side aluminum electrode is equal to or more than 10.0 μm.

### Claim 3 (depends on 1)

The back-side electrode according to claim 1, wherein the silicon wafer comprises passivation layer and silicon layer, and the passivation layer is deposited on the silicon layer.

### Claim 4 (depends on 1)

The back-side electrode according to claim 1, wherein the glass frit is selected from the group consisting of B2O3—SiO2—Bi2O3 based glass, and B2O3—SiO2—PbO based glass.

### Claim 5 (depends on 1)

The back-side electrode according to claim 1, wherein a glass transition temperature of the glass frit in both the first aluminum paste and the second aluminum paste is no more than 577° C.