# US 2014/0190411 A1 · Lid assembly for a processing system to facilitate sequential deposition techniques

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- Number: US 2014/0190411 A1
- Document ID: US20140190411A1
- Status: Published application
- Kind: A1
- Application number: 14/152,730
- Filed: 2014-01-10
- Published: 2014-07-10
- Earliest claimed: 2001-12-12
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: GWO-CHUAN TZU; SALVADOR P. UMOTOY
- Web page: https://patentgrep.com/patent/US20140190411A1

## CPC

- C23C 16/45544: {characterized by the apparatus}
- C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C 16/45512: {Premixing before introduction in the reaction chamber}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45538: {Plasma being used continuously during the ALD cycle}
- C23C 16/45561: {Gas plumbing upstream of the reaction chamber}
- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.

## Claims

### Claim 1

A substrate processing system, comprising:
a lid having an upper lid surface opposed to a lower lid surface;
a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface;
a gas manifold disposed on the lid;
at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process; and
a gas reservoir fluidly connected between the gas manifold and at least one precursor source.

### Claim 2 (depends on 1)

The substrate processing system of claim 1, further comprising a second gas reservoir, and the second gas reservoir is fluidly connected to the gas manifold through a gas line.

### Claim 3 (depends on 2)

The substrate processing system of claim 2, wherein the second gas reservoir is fluidly connected between the gas manifold and at least one precursor source.

### Claim 4 (depends on 1)

The substrate processing system of claim 1, wherein the gas reservoir has about 5 times the volume than required in each gas delivery cycle.

### Claim 5 (depends on 1)

The substrate processing system of claim 1, further comprising a remote plasma source coupled with the gas manifold.

### Claim 6 (depends on 5)

The substrate processing system of claim 5, wherein the remote plasma source is fluidly coupled to the at least one gas inlet passage.

### Claim 7 (depends on 1)

The substrate processing system of claim 1, wherein the gas manifold comprises:
an upper manifold surface and a lower manifold surface; and
a first gas channel and a second gas channel each extending from the upper manifold surface, through the gas manifold, and to the lower manifold surface.

### Claim 8 (depends on 7)

The substrate processing system of claim 7, wherein the first gas channel is in fluid communication with a first gas inlet passage of the plurality of gas inlet passages, and the second gas channel is in fluid communication with a second gas inlet passage of the plurality of gas inlet passages.

### Claim 9 (depends on 8)

The substrate processing system of claim 8, wherein the first and second gas inlet passages are extended through the lid in a direction perpendicular to the upper lid surface.

### Claim 10 (depends on 7)

The substrate processing system of claim 7, further comprising a third gas channel extending from the upper manifold surface to the lower manifold surface.

### Claim 11 (depends on 1)

The substrate processing system of claim 1, wherein the gas manifold further comprises a conduit disposed therein and configured to flow a heat transfer fluid therethrough.

### Claim 12

A substrate processing system, comprising:
a lid having an upper lid surface opposed to a lower lid surface;
a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface;
a gas manifold disposed on the lid;
at least one valve coupled to the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second for enabling an atomic layer deposition process; and
a gas reservoir fluidly connected between the gas manifold and at least one precursor source.

### Claim 13 (depends on 12)

The substrate processing system of claim 12, further comprising a second gas reservoir, and the second gas reservoir is fluidly connected to the gas manifold through a gas line.

### Claim 14 (depends on 13)

The substrate processing system of claim 13, wherein the second gas reservoir is fluidly connected between the gas manifold and at least one precursor source.

### Claim 15 (depends on 12)

The substrate processing system of claim 12, further comprising a remote plasma source coupled with the gas manifold.

### Claim 16 (depends on 15)

The substrate processing system of claim 15, wherein the remote plasma source is fluidly coupled to the at least one gas inlet passage.

### Claim 17 (depends on 12)

The substrate processing system of claim 12, wherein the gas manifold comprises:
an upper manifold surface and a lower manifold surface; and
a first gas channel and a second gas channel each extending from the upper manifold surface, through the gas manifold, and to the lower manifold surface.

### Claim 18 (depends on 17)

The substrate processing system of claim 17, wherein the first gas channel is in fluid communication with a first gas inlet passage of the plurality of gas inlet passages, and the second gas channel is in fluid communication with a second gas inlet passage of the plurality of gas inlet passages.

### Claim 19 (depends on 18)

The substrate processing system of claim 18, wherein the first and second gas inlet passages are extended through the lid in a direction perpendicular to the upper lid surface.

### Claim 20 (depends on 18)

The substrate processing system of claim 18, wherein the gas manifold further comprises a conduit disposed therein and configured to flow a heat transfer fluid therethrough.