# US 2014/0190409 A1 · Device and method for forming film

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- Number: US 2014/0190409 A1
- Document ID: US20140190409A1
- Status: Published application
- Kind: A1
- Application number: 14/204,551
- Filed: 2014-03-11
- Published: 2014-07-10
- Earliest claimed: 2009-07-22
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Kenji MATSUMOTO; Hidenori MIYOSHI
- Web page: https://patentgrep.com/patent/US20140190409A1

## CPC

- H10P 14/24: using chemical vapour deposition [CVD]
- C23C 16/40: Oxides
- C23C 16/406: {of iron group metals}
- C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins}
- H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/047: {by introducing additional elements therein}
- H10W 20/0552: {by diffusing metallic dopants to react with dielectrics}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.

## Claims

### Claim at position 1

1-12. (canceled)

### Claim 13

A film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air,
wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.

### Claim 14

A film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas and an oxygen-containing gas within a processing chamber configured to exhaust air,
wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.

### Claim 15 (depends on 13)

The apparatus of claim 13, wherein the member includes one or more selected from the group consisting of the processing chamber, a shower head unit configured to introduce a gas into the processing chamber, a mounting table structure configured to support the object to be processed, and a gate valve opened when the object to be processed is carried in or out of the processing chamber.

### Claim 16 (depends on 13)

The apparatus of claim 13, wherein the hydrophobic layer is also formed on the interior of an exhaust pipe connected to the processing chamber.

### Claim 17 (depends on 13)

The apparatus of claim 13, wherein the hydrophobic layer is configured as one layer selected from the group consisting of an SiOC layer, a fluorinated resin layer, and a hydrophobized silicon layer.

### Claim 18 (depends on 13)

The apparatus of claim 13, wherein a metal included in the organic metal raw material gas is one or more metals selected from the group consisting of Mn, Nb, Zr, Cr, V, Y, Pd, Ni, Pt, Rh, Tc, Al, Mg, Sn, Ge, Ti, and Re.

### Claim 19 (depends on 18)

The apparatus of claim 18, wherein the organic metal material including the Mn is one or more materials selected from the group consisting of (EtCp)2Mn[=Mn(C2H5C5H4)2], Cp2Mn[=Mn(C5H5)2], (MeCp)2Mn[=Mn(CH3C5H4)2], (i-PrCp)2Mn[=Mn(C3H7C5H4)2], MeCpMn(CO)3[=(CH3C5H4)Mn(CO)3], (t-BuCp)2Mn[=Mn(C4H9C5H4)2], CH3Mn(CO)5, Mn(DPM)3[=Mn(C11H19O2)3], Mn(DMPD)(EtCp)[=Mn(C7H11C2H5C5H4)], Mn(acac)2[=Mn(C5H7O2)2], Mn(DPM)2[=Mn(C11H19O2)2], Mn(acac)3[=Mn(C5H7O2)3], Mn(hfac)2[=Mn(C5HF6O2)3], ((CH3)5Cp)2Mn[=Mn((CH3)5C5H4)2], [Mn(iPr-AMD)2][=Mn(C3H7NC(CH3)NC3H7)2], and [Mn(tBu-AMD)2][=Mn(C4H9NC(CH3)NC4H9)2].

### Claim 20 (depends on 14)

The apparatus of claim 14, wherein the member includes one or more selected from the group consisting of the processing chamber, a shower head unit configured to introduce a gas into the processing chamber, a mounting table structure configured to support the object to be processed, and a gate valve opened when the object to be processed is carried in or out of the processing chamber.

### Claim 21 (depends on 14)

The apparatus of claim 14, wherein the hydrophobic layer is also formed on the interior of an exhaust pipe connected to the processing chamber.