# US 2014/0190401 A1 · Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0190401 A1 - Document ID: US20140190401A1 - Status: Published application - Kind: A1 - Application number: 14/150,629 - Filed: 2014-01-08 - Published: 2014-07-10 - Earliest claimed: 2007-04-25 - Inventors: Fareed SEPEHRY-FARD - Web page: https://patentgrep.com/patent/US20140190401A1 ## CPC - C30B 23/02: Epitaxial-layer growth - C30B 1/026: {Solid phase epitaxial growth through a disordered intermediate layer} - C30B 29/42: Gallium arsenide - H10F 71/134: {Irradiation with electromagnetic or particle radiation} - H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) - Y10T 117/10: Apparatus - Y10T 117/1008: with responsive control means - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A doping and multi-chamber method and apparatus for the growth of material, directed toward Solid Phase Epitaxy (SPE) process, is disclosed. Different variations and features of this method and process are examined. The advantages of this method are the high throughput and the reduced operational cost of the production for semiconductor material and devices, such as III-V material (e.g. GaAs) and solar cell devices. It can be applied to many systems and devices/materials. ## Claims ### Claim 1 A method for the growth of material, comprising: separating a first source and a first substrate by one or more spacers; heating the source and substrate in the presence of a first gas under conditions sufficient to transfer material from the source to the substrate; and providing a second gas to the source and substrate qualitatively and/or quantitatively different from the first gas. ### Claim 2 (depends on 1) The method of claim 1, further comprising: placing the separated first source and first substrate into a growth chamber; and purging the growth chamber with the first gas prior to heating the substrate, wherein the source and substrate are heated in the growth chamber, and the second gas is provided in the growth chamber without opening the growth chamber between heating the source and substrate in the presence of the first gas and providing the second gas. ### Claim 3 (depends on 1) The method of claim 1, wherein the first gas comprises a first transport agent gas, and the second gas comprises a second transport agent gas. ### Claim 4 (depends on 3) The method of claim 3, further comprising purging the growth chamber with a gas other than the first transport agent gas, prior to purging the growth chamber with the first transport agent gas. ### Claim 5 (depends on 4) The method of claim 4, wherein the first transport agent gas consists essentially of CO2, H2O, I2, ZnCl2, PCl3 and/or H2 and the gas other than the first transport agent gas consists essentially of N2. ### Claim 6 (depends on 2) The method of claim 2, further comprising introducing one or more first dopants into the growth chamber prior to purging the growth chamber with the first gas. ### Claim 7 (depends on 6) The method of claim 6, further comprising introducing one or more second dopants into the growth chamber. ### Claim 8 (depends on 6) The method of claim 6, wherein the one or more first dopants comprise a p-type dopant, an n-type dopant, and/or one or more members of the group consisting of Ge, Te, Zn, brass, Au, Sn, and Cu. ### Claim 9 (depends on 6) The method of claim 6, further comprising introducing one or more sources of the one or more first dopants into an external basket communicatively coupled to the growth chamber after placing the first source and first substrate into the growth chamber, but prior to purging the growth chamber with the first gas. ### Claim 10 (depends on 1) The method of claim 1, wherein said one or more spacers each have a thickness of about 0.3 mm to 3.4 mm ### Claim 11 (depends on 1) The method of claim 1, wherein said growth chamber comprises: an intake element configured to receive the first and second gases from the supply chamber; a holder configured to hold a source and substrate; a reactor configured to enclose the holder, the reactor containing an opening for the intake element; and a heating element configured to heat the source and/or substrate. ### Claim 12 (depends on 11) The method of claim 11, wherein said holder comprises a plurality of holders, each configured to hold a unique source and a unique substrate, wherein each unique source and unique substrate is capable of receiving a unique gas or combination of gases at unique rate(s). ### Claim 13 (depends on 12) The method of claim 12, wherein each of the plurality of holders can be moved vertically and/or horizontally independently of the other holders and/or in concert with the other holders. ### Claim 14 (depends on 12) The method of claim 12, wherein the reactor comprises a plurality of reactors each corresponding to a unique one of the plurality of holders. ### Claim 15 (depends on 11) The method of claim 11, wherein said reactor is configured to maintain each of the first and second gases at a pressure of greater than 1 torr to 1 atm. ### Claim 16 (depends on 11) The method of claim 11, wherein said heating element is configured to heat the source at a first temperature and the substrate at a second temperature different from the first temperature, the first temperature and the second temperature causing growth of a material from the source on the substrate by a transport reaction between the first gas and the source. ### Claim 17 (depends on 16) The method of claim 16, wherein the second temperature causes growth of the material from the source by a reverse reaction on the substrate of a product of the transport reaction. ### Claim 18 (depends on 1) The method of claim 1, wherein the first gas includes CO2. ### Claim 19 (depends on 18) The method of claim 18, wherein the first gas further includes H2. ### Claim 20 (depends on 19) The method of claim 19, wherein said second gas comprises at least one member of the group consisting of O2, N2, I2, ZnCl2, and PCl3.