Method of depositing a film

A method of depositing a film of forming an oxide film containing a predetermined first element and a predetermined second element on a plurality of substrates using a film deposition apparatus including

• a turntable that is accommodated in a chamber, is rotatable, and includes mounting portions formed on an upper surface of the turntable so that the substrates are mounted on the mounting portions,
• a first process area laid out above the upper surface of the turntable and being provided with a first gas supplying portion, which supplies gases toward the upper surface of the turntable,
• a second process area arranged apart from the first process area along a peripheral direction of the turntable and being provided with a second gas supplying portion, which supplies the gases toward the upper surface of the turntable, and
• a separation area including a separation gas supplying portion provided between the first process area and the second process area and supplying a separation gas onto the upper surface of the turntable, and a ceiling surface forming a narrow space so that the narrow space for introducing the separation gas supplied from the separation gas supplying portion to the first process area and the second process area is formed between the ceiling surface and the surface of the turntable, the method of depositing the film comprising:
• a first process of rotating the turntable at least one turn while the separation gas is supplied from the first gas supplying portion and the separation gas supplying portion, and an oxidation gas is supplied from the second gas supplying portion;
• a second process of depositing a first oxide film containing the first element onto the substrates by rotating the turntable a first predetermined number of turns while a first reaction gas containing the first element is supplied from the first gas supplying portion, the oxidation gas is supplied from the second gas supplying portion, and the separation gas is supplied from the separation gas supplying portion;
• a third process of rotating the turntable at least one turn under a state where the separation gas is supplied from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas is supplied from the second gas supplying portion;
• and
• a fourth process of rotating the turntable at least a second predetermined number of turns in order to deposit a second oxide film containing the second element on the substrates under a state where a second reaction gas containing the second element is supplied from the first gas supplying portion, the oxidation gas is supplied from the second gas supplying portion, and the separation gas is supplied from the separation gas supplying portion.